Related papers: Impurity band conduction in group-IV ferromagnetic…
We report electrical transport measurements on individual disordered carbon nanotubes, grown catalytically in a nanoporous anodic aluminum oxide template. In both as-grown and annealed types of nanotubes, the low-field conductance shows as…
The negative Hall constant R_H measured all over the phase diagram of Ba(Fe(1-x)Cox)2As2 allows us to show that electron carriers always dominate the transport properties. The evolution of R_H with x at low doping (x<2%) indicates that…
We investigated the superconducting and transport properties in FeTe$_{1-x}$Se$_{x}$ (0.1 $\leq$ $x$ $\leq$ 0.4) single crystals prepared by O$_2$-annealing. Sharp superconducting transition width observed in magnetization measurement and…
We report electron transport studies of a (001) GdN film grown on the square net presented by the (001) surface of LaAlO3, motivated by recent advances in epitaxial thin-film growth of several lanthanide nitrides. The film we have grown for…
Biaxially textured FeSe1-xTex films have been realized on Fe-buffered MgO substrates by pulsed laser deposition. Similar to the Fe/BaFe2As2 bilayers, the crystalline quality of FeSe1-xTex films exhibit a sharp out-of-plane and in-plane…
Correlation between structural/microstructural and magneto-thermal transport properties of FeAs-based SmFeAsO and SmFeAsO0.85F0.15 has been studied in detail. The Rietveld analysis of room temperature powder X-ray diffraction (XRD) data…
We present a comprehensive first-principles investigation of optical, transport, and thermoelectric properties of pure and doped hexagonal Si$_x$Ge$_{1-x}$ alloys based on density-functional theory calculations, the Boltzmann transport…
Covalent amorphous semiconductors, such as amorphous silicon (a-Si) and germanium (a-Ge), are commonly believed to have localized electronic states at the top of the valence band and the bottom of the conduction band. Electrical…
Non-Fermi liquids are strange metals whose physical properties deviate qualitatively from those of conventional metals due to strong quantum fluctuations. In this paper, we report transport measurements on the FeSe$_{1-x}$S$_x$…
Sizable single-crystalline samples of Ca$_{10}$(Pt$_3$As$_8$)((Fe$_{1-x}$Pt$_x$)$_2$As$_2$)$_5$ (the 10-3-8 phase) with 0$\leq x<$0.1 have been grown and systematically characterized via X-Ray diffraction, magnetic, and transport…
We reveal the nature of transport and ferromagnetic properties of the GaAs structure with the single Mn {\delta}-doped layer. To modify the properties of the structure the electrically active radiation defects are created by irradiation…
A series of thin films Fe$_{4-x}$Ge$_x$N (x=0-1) was fabricated onto MgO substrates by magnetron sputtering with the aim of studying the possible enhancement of the anomalous Nernst effect (ANE), envisaged based on Density Functional Theory…
In order to examine to what extent the rigid-band-like electron doping scenario is applicable to the transition metal-substituted Fe-based superconductors, we have performed angle-resolved photoemission spectroscopy studies of…
We investigated the electronic and magnetic properties of fully oxidized BaFeO3 thin films, which show ferromagnetic-insulating properties with cubic crystal structure, by hard x-ray photoemission spectroscopy (HAXPES), x-ray absorption…
The magnetic and transport behaviors of cerium substituted iron oxy-arsenide superconductor with x = 0.1 to 0.4 fluoride (F) doping have been investigated in this report. Temperature dependent susceptibility and resistivity measurements…
The normal-state charge transport is studied systematically in high-quality single crystals of BaFe$_2$(As$_{1-x}$P$_x$)$_2$ ($0 \leq x \leq 0.71$). By substituting isovalent P for As, the spin-density-wave (SDW) state is suppressed and the…
Fe-doped III-V ferromagnetic semiconductors (FMSs) such as (In,Fe)As, (Ga,Fe)Sb, (In,Fe)Sb, and (Al,Fe)Sb are promising materials for spintronic device applications because of the availability of both n- and p-type materials and the high…
Partial substitution of Fe by Ta in the hole-doped La0.5Sr0.5FeO3 decreases the electric conductivity by up to three orders of magnitude. This decrease is in immediate correlation with a decrease of the electron hole concentration and a…
Controlling charged impurity disorder is a critical challenge for realizing the promise of topological insulator (TI) surfaces in devices. While doping is often used to tune the chemical potential, its impact on the fundamental disorder…
The electronic and magnetic properties of iron-doped topological insulator Bi1.84-xFe0.16CaxSe3 single crystals were studied. By co-doping Fe and Ca atoms, ferromagnetic bulk states with different carrier density (from n-type to p-type)…