Related papers: Impurity band conduction in group-IV ferromagnetic…
We have investigated the transport and magnetic properties of group-IV ferromagnetic semiconductor Ge1-xFex films (x = 1.0 and 2.3 %) with and without boron doping grown by molecular beam epitaxy (MBE). In order to accurately measure the…
A new group-IV ferromagnetic semiconductor, Ge1-xFex, was successfully grown by low-temperature molecular beam epitaxy (LT-MBE) without precipitation of ferromagnetic Ge-Fe intermetallic compounds. The ferromagnetism of Ge1-xFex films was…
The Hall effect is investigated in thin-film samples of iron-chalcogenide superconductors in detail. The Hall coefficient (RH) of FeTe and Fe(Se1-xTex) exhibits a similar positive value around 300 K, indicating that the high-temperature…
Topological semimetals are renowned for exhibiting large, unsaturated magnetoresistance arising from ultrahigh carrier mobility and electron-hole compensation. However, such behaviors remain poorly understood in iron-based superconductors…
Single phase, sol-gel prepared Cu1-xFexO (0<x<0.125) are characterized in terms of structural, electronic and magnetic properties. Using dielectric and magnetic studies we investigate the coupling of electron and spin. The electrical…
We report the growth temperature dependence of the properties of the group-IV-based ferromagnetic semiconductor Ge1-xFex films (x = 6.5% and 10.5%), including the lattice constant, Curie temperature (TC), and Fe-atom locations. While TC…
We demonstrate that in ferromagnetic Ga1-xMnxP exchange is mediated by holes localized in a Mn-derived band. For x<0.06, infrared absorption and photoconductivity spectra indicate the presence of a Mn impurity band which is not merged with…
We present transport and superconducting properties - namely resistivity, magnetoresistivity, Hall effect, Seebeck effect, thermal conductivity, upper critical field - of two different families of Fe-based superconductors, which can be…
Thin films of magnetite (Fe3O4) are grown on single crystal GaAs (100) substrate by pulsed laser deposition. X ray diffraction (XRD) result shows the (111) preferred orientation of the Fe3O4 film and x-ray photoelectron spectroscopy confirm…
We report transport studies on (Bi,Sb)2Te3 topological insulator thin films with tunable electronic band structure. We find a doping and temperature regime in which the Hall coefficient is negative indicative of electron-type carriers,…
We report the magnetic and transport properties of Ga1-xMnxP synthesized via ion implantation followed by pulsed laser melting over a range of x, namely 0.018 to 0.042. Like Ga1-xMnxAs, Ga1-xMnxP displays a monotonic increase of the…
We report on the synthesis and physical properties of FeSe$_{1-x}$Te$_x$ single crystals with a low Te content (x = 0.17, 0.21, 0.25), where the replacement of Se with Te partially suppresses superconductivity. Resistivity and Hall effect…
Group-IV-based ferromagnetic semiconductor Ge1-xFex (GeFe) is one of the most promising materials for efficient spin injectors and detectors for Si and Ge. Recent first principles calculations (Sakamoto et al., Ref. 9) suggested that the…
We investigated the transport properties under magnetic fields of up to 9 T for FeSe$_{1-x}$Te$_x$ thin films on CaF$_2$. Measurements of the temperature dependence of the electrical resistivity revealed that for $x = 0.2 - 0.4$, where…
We investigate transport in phosphorus-doped buried-channel metal-oxide-semiconductor field-effect transistors at temperatures between 10 and 295 K. In a range of doping concentration between around 2.1 and 8.7 x 1017 cm-3, we find that a…
We present a detailed investigation of the magnetic and magnetotransport properties of thin films of ferromagnetic Ga1-xMnxAs synthesized using ion implantation and pulsed-laser melting (II-PLM). The field and temperature-dependent…
We present a theory of the Anomalous Hall Effect (AHE) in ferromagnetic (Ga,Mn)As in the regime when conduction is due to phonon-assisted hopping of holes between localized states in the impurity band. We show that the microscopic origin of…
We investigate the amorphous structure, chemical bonding, and electrical properties of magnetron sputtered Fe1-xCx (0.21<x<0.72) thin films. X-ray, electron diffraction and transmission electron microscopy show that the Fe1-xCx films are…
Superconducting (Li1-xFex)OHFe1-ySe films are attractive for both the basic research and practical application. However, the conventional vapor deposition techniques are not applicable in synthesizing the films of such a complex system. So…
We investigate the crystal structure, transport and magnetic properties of Fe-doped ferromagnetic semiconductor (Al1-x,Fex)Sb thin films up to x = 14% grown by molecular beam epitaxy. All the samples show p-type conduction at room…