Related papers: Abrupt p-n junction using ionic gating at zero-bia…
Flat electronic bands can accommodate a plethora of interaction driven quantum phases, since kinetic energy is quenched therein and electronic interactions therefore prevail. Twisted bilayer graphene, near so-called the "magic angles",…
We study the superconducting transport phenomena, involving lensing effect and supercurrent in AA-stacked bilayer graphene, which is characterized by a linear gapless band with two shifted Dirac cones. Our findings indicate that cross…
Ultrawide bandgap (UWBG) semiconductors exhibit exceptional electrical and thermal properties, offering strong potential for high power and high frequency electronics. However, efficient doping in UWBG materials is typically limited to…
The interplay of graphene and superconductivity has attracted great interest for understanding the two-dimensional Dirac Fermion physics and for superconducting device applications. In previous work, graphene-superconductor junctions…
Ramp-type junctions of $\rm Au-Bi_2Se_3-NbN$ were prepared on top of a bottom gate comprised of a $\rm SrTiO_3$ gate-insulator film on $\rm NbN$ gate-electrode layer on (100) $\rm SrTiO_3$ wafer. Two wafers with gate-insulator thickness of…
A junction between an n- and p-type semiconductor results in the creation of a depletion region whose properties are at the basis of nowadays electronics. If realized using topological insulators as constituent materials, p-n junctions are…
We fabricated graphene pnp devices, by embedding pre-defined local gates in an oxidized surface layer of a silicon substrate. With neither dielectric-material deposition nor electron-beam irradiation on the graphene, we obtained…
Graphene is an attractive material for broadband photodetection but suffers from weak light absorption. Coating graphene with quantum dots can significantly enhance light absorption and create extraordinarily high photo gain. This high gain…
In the effort to make 2D materials-based devices smaller, faster, and more efficient, it is important to control charge carrier at lengths approaching the nanometer scale. Traditional gating techniques based on capacitive coupling through a…
Graphene grown on metal surface, Cu(111), with a boron nitride(BN) buffer layer is studied for the first time. Our first-principles calculations reveal that charge is transferred from the copper substrate to graphene through the BN buffer…
Superconductivity with transition temperature $T_c=1.7$ K has been reported in bilayer graphene [1,2]. The main factors, which may shed light on the mechanism of the formation of this superconductivity, are the following. Superconductivity…
We study transport properties of graphene-based p-n junctions irradiated by an electromagnetic field (EF). The resonant interaction of propagating quasiparticles with an external monochromatic radiation opens dynamical gaps in their…
Graphane is a semiconductor with an energy gap, obtained from hydrogenation of the two-dimensional grapheme sheet. Together with the two-dimensional geometry, unique transport features of graphene, and possibility of doping graphane, p and…
Spatial manipulation of current flow in graphene could be achieved through the use of a tilted pn junction. We show through numerical simulation that a pseudo-Hall effect (i.e. non-equilibrium charge and current density accumulating along…
We demonstrate exciton and charged exciton (trion) electroluminescence from frozen p-n junctions in networks of polymer-sorted, semiconducting (6,5) single-walled carbon nanotubes. Electrolyte-gating with an ionic liquid was employed to…
Ballistic transport in graphene p-n junctions in the presence of magnetic field exhibits two distinct regimes: At low fields, transport is partially suppressed by the field. When the field exceeds a certain critical value, the junction is…
We present a technique to fabricate tunnel junctions between graphene and Al and Cu, with a Si back gate, as well as a simple theory of tunneling between a metal and graphene. We map the differential conductance of our junctions versus…
We investigate the electron transport in smooth graphene pn junctions, generated by gradually varying electrostatic potentials. The numerically calculated coherent current flow patterns can be understood largely in terms of semi-classical…
Recent experiments [L. Ju et al., Nature, 2015, 520, 650] confirm the existence of gapless states at domain walls created in gated bilayer graphene, when the sublattice stacking is changed from AB to BA. These states are significant because…
Direct, tunable coupling between individually assembled graphene layers is a next step towards designer two-dimensional (2D) crystal systems, with relevance for fundamental studies and technological applications. Here we describe the…