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High energy particles from cosmic rays or packaging materials can generate a glitch or a current transient (single event transient or SET) in a logic circuit. This SET can eventually get captured in a register resulting in a flip of the…
The influence of the channel shape in a junctionless silicon-on-insulator finned field-effect transistor (JL SOI FinFET) on the amplitude of random telegraph noise (RTN) induced by single interface trapped charge has been simulated for the…
This paper reports a comprehensive study on the impacts of temperature-change, process variation, flicker noise and device aging on the inference accuracy of pre-trained all-ferroelectric (FE) FinFET deep neural networks.…
In this paper a microscopic theory of spin fluctuations in an ensemble of electrons localized on donors in a bulk semiconductor has been developed. Both the hyperfine interaction of the electron spin with spins of lattice nuclei and the…
The frequency exponent of 1/f noise in graphene-boron nitride heterostructures is known to have multiple extrema in its dependence on the charge carrier concentration. This behavior is explained in the present paper as a result of the…
The concept of low-voltage depletion and accumulation of electron charge in semiconductors, utilized in field-effect transistors (FETs), is one of the cornerstones of current information processing technologies. Spintronics which is based…
Multifragmentation of quasiprojectiles was studied in reactions of 28Si beam with 112Sn and 124Sn targets at projectile energies 30 and 50 MeV/nucleon. The quasiprojectile observables were reconstructed using isotopically identified charged…
We report the detection of single ion impacts through monitoring of changes in the source-drain currents of field effect transistors (FET) at room temperature. Implant apertures are formed in the interlayer dielectrics and gate electrodes…
We study the consequences of negative differential electron mobility in insulated gate field effect transistors (FETS) using the field model. We show that, in contrast to the case of the monotonic velocity saturation model, the field…
We propose and theoretically analyze a novel metal-oxide-semiconductor field-effect-transistor (MOSFET) type of spin transistor (hereafter referred to as a spin MOSFET) consisting of a MOS gate structure and half-metallic-ferromagnet (HMF)…
Despite the enormous progress achieved during the past decade, nanoelectronic devices based on two-dimensional (2D) semiconductors still suffer from a limited electrical stability. This limited stability has been shown to result from the…
Due to presence of magnetic field gradient needed for coherent spin control, dephasing of single-electron spin qubits in silicon quantum dots is often dominated by $1/f$ charge noise. We investigate theoretically fluctuations of ground…
We propose a direct experimental extraction technique for trapped charges and quantitative energy band diagrams in the FeFETs with metal-insulator-ferroelectric-insulator-semiconductor (MIFIS) structure, derived from the physical…
The presence of interface states at the MOS interface is a well-known cause of device degradation. This is particularly true for ultra-scaled FinFET geometries where the presence of a few traps can strongly influence device behavior.…
Variability of low frequency noise (LFN) in MOSFETs is bias-dependent. Moderate- to large-sized transistors commonly used in analog/RF applications show 1/f-like noise spectra, resulting from the superposition of random telegraph noise…
Atomically thin semiconductors have versatile future applications in the information and communication technologies for the ultimate miniaturization of electronic components. In particular, the ongoing research demands not only a…
High-frequency performance of graphene field-effect transistors (GFETs) with boron-nitride gate dielectrics is investigated. Devices show saturating IV characteristics and fmax values as high as 34 GHz at 600-nm channel length. Bias…
The dependence of random telegraph noise (RTN) amplitude on the gate overdrive in a junctionless field-effect transistor (FinFET) with rectangular and trapezoidal channel (fin) cross sections manufactured using silicon-on-insulator…
Ferroelectric field-effect-transistor (FEFET) has emerged as a scalable solution for 3D NAND and embedded flash (eFlash), with recent progress in achieving large memory window (MW) using metal-insulator-ferroelectric-insulator-semiconductor…
Edge-TCT and charge collection measurements with passive test structures made in LFoundry 150 nm CMOS process on p-type substrate with initial resistivity of over 3 k$\Omega$cm are presented. Measurements were made before and after…