Related papers: Spatially Resolved Thermometry of Resistive Memory…

Resistive RAM (RRAM) devices are candidates for neuromorphic computing devices in which the functionality lies in the formation and reversible rupture and gap-closing of conducting filaments in insulating layers. To explore the thermal…

Scanning Thermal Microscopy (SThM) uses micromachined thermal sensors integrated in a force sensing cantilever with a nanoscale tip can be highly useful for exploration of thermal management of nanoscale semiconductor devices. As well as…

Nanostructured materials, critical for thermal management in semiconductor devices, exhibit a strong size dependence in thermal transport. Studying thermal resistance variation across grain boundaries is critical for designing effective…

Surface temperature measurements were performed with a Scanning Thermal Microscope mounted with a thermoresistive wire probe of micrometrSurface temperature measurements were performed with a Scanning Thermal Microscope mounted with a…

Scanning Thermal Microscopy (SThM) has become an important measurement tool for characterizing the thermal properties of materials at the nanometer scale. This technique requires a SThM probe that combines an Atomic Force Microscopy (AFM)…

Nanoscale thermal properties are becoming of extreme importance for modern electronic circuits that dissipate increasing power on the length scale of few tens of nanometers, and for chemical and physical properties sensors and biosensors…

Phase change memory (PCM) is a rapidly growing technology that not only offers advancements in storage-class memories but also enables in-memory data storage and processing towards overcoming the von Neumann bottleneck. In PCMs, the primary…

We measure power dissipation in phase change memory (PCM) devices by scanning Joule ex-pansion microscopy (SJEM) with ~50 nm spatial and 0.2 K temperature resolution. The temperature rise in the Ge2Sb2Te5 (GST) is dominated by Joule…

Quantifying the temperature of microdevices is critical for probing nanoscale energy transport.Such quantification is often accomplished by integrating resistance thermometers into microdevices. However, such thermometers frequently become…

We review the Raman shift method as a non-destructive optical tool to investigate the thermal conductivity and demonstrate the possibility to map this quantity with a micrometer resolution by studying thin film and bulk materials for…

Material thermal properties characterization at nanoscales remains a challenge even if progresses were done in developing specific characterization techniques like the Scanning Thermal Microscopy (SThM). In the present work, we propose a…

We present a Raman-based Distributed Temperature Sensor (RDTS) with centimetre-scale resolution for thermographic analysis of electronic circuits. Temperature is measured along a single-mode fiber routed across a custom printed circuit…

Scanning thermal microscopy (SThM) - a type of scanning probe microscopy that allows mapping thermal transport and temperatures in nanoscale devices, is becoming a key approach that may help to resolve heat dissipation problems in modern…

In this paper, we report the effect of filament radius and filament resistivity on the saturated temperature of ZnO, TiO2, WO3 and HfO2 Resistive Random Access Memory (RRAM) devices. We resort to the thermal reaction model of RRAM for the…

The thermal properties of amorphous and crystalline phases in chalcogenide phase change materials (PCM) play a key role in device performance for non-volatile random-access memory. Here, we report the nanothermal morphology of amorphous and…

We investigate the temperature distributions of Joule self-heated graphene nanoribbons (GNRs) with a spatial resolution finer than 100 nm by scanning thermal microscopy (SThM). The SThM probe is calibrated using the Raman G mode…

Spatially-resolved Raman spectra of individual pristine suspended carbon nanotubes are observed under electrical heating. The Raman G+ and G- bands show unequal temperature profiles. The preferential heating is more pronounced in short…

Gradual switching between multiple resistance levels is desirable for analog in-memory computing using resistive random-access memory (RRAM). However, the filamentary switching of $HfO_x$-based conventional RRAM often yields only two stable…

The microelectronics industry is pushing the fundamental limit on the physical size of individual elements to produce faster and more powerful integrated chips. These chips have nanoscale features that dissipate power resulting in nanoscale…

The key challenge in multispectral radiation thermometry is accurately measuring emissivity. Traditional constrained optimization methods often fail to meet practical requirements in terms of precision, efficiency, and noise resistance.…