Related papers: Gate-tunable black phosphorus spin valve with nano…
The demand for compact, high-speed and energy-saving circuitry urges higher efficiency of spintronic devices that can offer a viable alternative for the current electronics. The route towards this goal suggests implementing two-dimensional…
Zigzag phosphorene nanoribbons are metallic owing to the edge states, whose energies are inside the gap and far from the bulk bands. We show that -- through electrical manipulation of edge states -- electron propagation can be restricted to…
Spin transport experiments in graphene, a single layer of carbon atoms, indicate spin relaxation times that are significantly shorter than the theoretical predictions. We investigate experimentally whether these short spin relaxation times…
Graphitic nanostructures, e.g. carbon nanotubes (CNT) and graphene, have been proposed as ideal materials for spin conduction[1-7]; they have long electronic mean free paths[8] and small spin-orbit coupling[9], hence are expected to have…
Spin transistors based on a semiconducting channel attached to ferromagnetic electrodes suffer from fast spin decay and extremely low spin injection/detection efficiencies. Here, we propose an alternative all-in-one spin device whose…
We propose a non-magnetic, pseudospin-based version of a spin valve, in which the pseudospin polarization in neighboring regions of a graphene bilayer is controlled by external gates. Numerical calculations demonstrate a large on-off ratio…
Graphene is a promising platform for spin-based non-volatile memory, logic, and neuromorphic computing by combining long-distance spin transport with electrical tunability at room temperature. However, advancing beyond passive spin channels…
We report the first measurements of spin injection in to graphene through a 20 nm thick tungsten disulphide (WS$_2$) layer, along with a modified spin relaxation time ({\tau}s) in graphene in the WS$_2$ environment, via spin-valve and Hanle…
Because of its fascinating electronic properties, graphene is expected to produce breakthroughs in many areas of nanoelectronics. For spintronics, its key advantage is the expected long spin lifetime, combined with its large electron…
Molybdenum disulfide has recently emerged as a promising two-dimensional semiconducting material for nano-electronic, opto-electronic and spintronic applications. However, demonstrating spin-transport through a semiconducting MoS2 channel…
We experimentally study the electronic spin transport in hBN encapsulated single layer graphene nonlocal spin valves. The use of top and bottom gates allows us to control the carrier density and the electric field independently. The spin…
Solid-state electronics based on utilizing the electron spin degree of freedom for storing and processing information can pave the way for next-generation spin-based computing. However, the realization of spin communication between multiple…
The photon spin is an important resource for quantum information processing as is the electron spin in spintronics. However, for subwavelength confined optical excitations, polarization as a global property of a mode cannot be defined.…
Injection, transmission, and detection of spins in a conducting channel are the basic ingredients of spintronic devices. Long spin lifetimes during transit are an important ingredient in realizing this technology. An attractive platform for…
Graphene is an ideal material for spin transport as very long spin relaxation times and lengths can be achieved even at room temperature. However, electrical spin injection is challenging due to the conductivity mismatch problem. Spin…
This is a theoretical study of electron transport in gated bilayer graphene - a novel semiconducting material with a tunable band gap. It is shown that the which-layer pseudospin coherence enhances the subgap conductivity and facilitates…
We study fully hexagonal boron nitride (hBN)-encapsulated graphene spin valve devices at room temperature. The device consists of a graphene channel encapsulated between two crystalline hBN flakes; thick-hBN flake as a bottom gate…
Monolayer graphene with an energy gap presents a pseudospin symmetry broken ferromagnet with a perpendicular pseudomagnetization whose direction is switched by altering the type of doping between n and p. We demonstrate an electrical…
Spintronics involves the development of low-dimensional electronic systems with potential use in quantum-based computation. In graphene, there has been significant progress in improving spin transport characteristics by encapsulation and…
In this review we discuss spin and charge transport properties in graphene-based single-layer and few-layer spin-valve devices. We give an overview of challenges and recent advances in the field of device fabrication and discuss two of our…