Related papers: Spin-orbit-torque MRAM: from uniaxial to unidirect…
The spin-orbit torque device is promising as a candidate for next generation magnetic memory, while the static in-plane field needed to induce deterministic switching is a main obstacle for its application in highly integrated circuits.…
Spin-orbit torque provides an efficient pathway to manipulate the magnetic state and magnetization dynamics of magnetic materials, which is crucial for energy-efficient operation of a variety of spintronic devices such as magnetic memory,…
We report on the combination of current-induced spin-orbit torques and giant magnetoresistance in a single device to achieve all-electrical write and read out of the magnetization. The device consists of perpendicularly magnetized TbCo and…
Spin torque oscillators are spintronic devices that generate a periodic output signal from a non-periodic input, making them promising candidates for applications like microwave communications and neuromorphic computing. However,…
The discovery that a spin polarized current can exert a large torque on a ferromagnet through a transfusion of spin angular momentum, offers a new way to control a magnetization by simple current injection, without the help of an applied…
Spin currents can modify the magnetic state of ferromagnetic ultrathin films through spin-orbit torque. They may be generated by means of spin-orbit interaction by either bulk or interfacial phenomena. Electrical transport measurements…
A new approach to increase the downsize scalability of perpendicular STT-MRAM is presented. It consists in significantly increasing the thickness of the storage layer in out-of-plane magnetized tunnel junctions (pMTJ) as compared to…
Ferromagnets are key materials for sensing and memory applications. In contrast, antiferromagnets that represent the more common form of magnetically ordered materials, have so far found less practical application beyond their use for…
Current-induced spin-orbit torques provide a versatile tool for switching magnetic devices. In perpendicular magnets, the dampinglike component of the torque is the main driver of magnetization reversal. The degree to which the fieldlike…
Enabling field-free current-induced switching of perpendicular magnetization is essential for advancing spin-orbit-torque magnetic random access memory technology. Our research on the Pt/Co/Ru/RuO2(101) system has successfully demonstrated…
Recent work [1,2] suggests that ferromagnetic reversal with spin transfer torque (STT) requires more current in a system in the presence of DMI than switching a typical ferromagnet of the same dimensions and perpendicular magnetic…
Control of magnetic domain wall movement by the spin-polarized current looks promising for creation of a new generation of magnetic memory devices. A necessary condition for this is the domain wall shift by a low-density current. Here I…
Electrical switching and readout of antiferromagnets allows to exploit the unique properties of antiferromagnetic materials in nanoscopic electronic devices. Here we report experiments on the spin-orbit torque induced electrical switching…
We develop a theory for spin transport and magnetization dynamics in a quantum-dot spin valve, i.e., two magnetic reservoirs coupled to a quantum dot. Our theory is able to take into account effects of strong correlations. We demonstrate…
Spintronics has advanced through discoveries of various electrically-driven spin dynamics in nanomagnets. Here, we report a novel switching dynamics of spin systems driven by spin-orbit torque, using a noncollinear antiferromagnetic…
Electric control of magnetic vortex dynamics in a reproducible way and on an ultrafast time scale is key element in the quest for efficient spintronic devices with low-energy consumption. To be useful the control scheme should ideally be…
Spin transfer - the transfer of angular momentum from spin-polarized electrical current to magnetic materials - has been extensively researched as an efficient mechanism for the electronic manipulation of the static and dynamic states in…
Spin-orbit torque (SOT)-induced magnetization switching shows promise for realizing ultrafast and reliable spintronics devices. Bipolar switching of perpendicular magnetization via SOT is achieved under an in-plane magnetic field collinear…
We investigate an interfacial spin-transfer torque and $\beta$-term torque with alternating current (AC) parallel to a magnetic interface. We find that both torques are resonantly enhanced as the AC frequency approaches to the exchange…
The spin Hall effect (SHE) generates spin currents within nonmagnetic materials. Previously, studies of the SHE have been motivated primarily to understand its fundamental origin and magnitude. Here we demonstrate, using measurement and…