Related papers: Observation of an environmentally insensitive soli…
A central problem in the deployment of quantum technologies is the realization of robust architectures for quantum interconnects. We propose to engineer interconnects in semiconductors and insulators by patterning spin qubits at…
Quantum sensing with solid-state spin defects has transformed nanoscale metrology, offering sub-wavelength spatial resolution with exceptional sensitivity to multiple signal types. Maximizing these advantages requires minimizing both the…
Electron spins are amongst the most coherent solid-state systems known, however, to be used in devices for quantum sensing and information processing applications, they must be typically placed near interfaces. Understanding and mitigating…
Color centers in diamond are at the forefront of the second quantum revolution. A handful of defects are in use, and finding ones with all the desired properties for quantum applications is arduous. By using high-throughput calculations, we…
Silicon vacancy (VSi) centers in 4H silicon carbide have emerged as a highly promising platform for semiconductor-based quantum technologies, combining excellent spin and optical properties with an industrial-grade, CMOS-compatible…
Group IV color centers in diamond are among the most promising optically active spin systems with strong optical transitions and long spin coherences. The ground-state splitting of the center is particularly important to suppress the…
Integrating solid-state spin defects into classical electronic devices can enable new opportunities for quantum information processing that benefit from existing semiconductor technology. We show, through bias control of an isotopically…
Understanding the interplay between a quantum system and its environment lies at the heart of quantum science and its applications. To-date most efforts have focused on circumventing decoherence induced by the environment by either…
The elimination of defects from SiC has facilitated its move to the forefront of the optoelectronics and power-electronics industries. Nonetheless, because the electronic states of SiC defects can have sharp optical and spin transitions,…
Several systems in the solid state have been suggested as promising candidates for spin-based quantum information processing. In spite of significant progress during the last decade, there is a search for new systems with higher potential…
Nuclear spins near group-IV defects in diamond are promising candidates for quantum memories in quantum network applications. Here, we demonstrate high-fidelity control of a single $^{13}$C nuclear spin coupled to a tin-vacancy (SnV) center…
Recent advances in the engineering of diamond surfaces make it possible to stabilize the charge state of 7-30 nanometers deep nitrogen-vacancy (NV) quantum sensors in diamond and to remove the charge noise at the surface principally.…
A neutral nitrogen-vacancy center (NV$^0$) is promising for realizing strong coupling with a single microwave photon due to its large electric field sensitivity, although it is susceptible to environmental phonon noise at 5 K. Decreasing…
Nanophotonic devices in color center-containing hosts provide efficient readout, control, and entanglement of the embedded emitters. Yet control over color center formation - in number, position, and coherence - in nanophotonic devices…
The coherent excitation of an optically active spin system is one of the key elements in the engineering of a spin-photon interface. Using the novel SUPER scheme, we coherently control the main optical transition of a tin-vacancy color…
Control over the charge states of color centers in solids is necessary in order to fully utilize them in quantum technologies. However, the microscopic charge dynamics of deep defects in wide-bandgap semiconductors are complex, and much…
Nitrogen vacancy centers (NV) in proximity to diamond surfaces are promising nanoscale quantum sensors. However, their coherence properties are negatively affected by magnetic and electric surface noise, whose origin and detailed impact…
Transition metal ions provide a rich set of optically active defect spins in wide bandgap semiconductors. Chromium (Cr4+) in silicon-carbide (SiC) produces a spin-1 ground state with a narrow, spectrally isolated, spin-selective,…
Spin-active color centers are the basis of solid-state defect systems utilized in quantum technologies. Although silicon is an emerging host material for quantum defects, there is an urgent need to characterize color centers with a non-zero…
The nitrogen-vacancy (NV) centre, as a promising candidate solid state system of quantum information processing, its electron spin coherence is influenced by the magnetic field fluctuations due to the local environment. In pure diamonds,…