Related papers: Observation of an environmentally insensitive soli…
Point defects in diamond may act as quantum bits. Recently, oxygen-vacancy related defects have been proposed to the origin of the so-called ST1 color center in diamond that can realize a long-living solid-state quantum memory. Motivated by…
We review recent advances towards the realization of quantum networks based on atom-like solid-state quantum emitters coupled to nanophotonic devices. Specifically, we focus on experiments involving the negatively charged silicon-vacancy…
Diamond has emerged as a highly promising platform for quantum network applications. Color centers in diamond fulfill the fundamental requirements for quantum nodes: they constitute optically accessible quantum systems with long-lived spin…
Group-IV vacancy (G4V, or XV, where X = Si, Ge, Sn, Pb) color centers constitute a novel and promising class of defects in diamonds. This chapter reviews and refines the theoretical models for the XV systems, encompassing the intrinsic…
Group-IV color centers in diamond are a promising light-matter interface for quantum networking devices. The negatively charged tin-vacancy center (SnV) is particularly interesting, as its large spin-orbit coupling offers strong protection…
The negatively charged tin-vacancy center in diamond (SnV$^-$) is an emerging platform for building the next generation of long-distance quantum networks. This is due to the SnV$^-$'s favorable optical and spin properties including bright…
The negatively-charged silicon-vacancy (SiV$^-$) center in diamond is a promising single photon source for quantum communications and information processing. However, the center's implementation in such quantum technologies is hindered by…
We realize an elementary quantum network node consisting of a silicon-vacancy (SiV) color center inside a diamond nanocavity coupled to a nearby nuclear spin with 100 ms long coherence times. Specifically, we describe experimental…
The ST1 center is a point defect in diamond with bright fluorescence and a mechanism for optical spin initialization and readout. The center has impressive potential for applications in diamond quantum computing as a quantum bus to a…
In recent years, nitrogen-vacancy (NV) color centers in diamond have become excellent solid-state quantum sensors due to their electronic spin properties. Especially for their easy optical initialization and detection, together with their…
Optical coupling enables intermediate- and long-range interactions between distant quantum emitters. Such interaction may be the basic element in bottom-up approaches of coupled spin systems or for integrated quantum photonics and quantum…
Exposure of matter to high energy, heavy ions induces defects along the trajectories of the ions through electronic and nuclear energy loss processes. Defects, including color centers, can recombine or form along latent damage tracks in…
The silicon-vacancy (SiV) center in diamond is typically found in three stable charge states, SiV0, SiV- and SiV2-, but studying the processes leading to their formation is challenging, especially at room temperature, due to their starkly…
Vanadium in silicon carbide (SiC) is emerging as an important candidate system for quantum technology due to its optical transitions in the telecom wavelength range. However, several key characteristics of this defect family including their…
Spin defects in silicon carbide (SiC) with mature wafer-scale fabrication and micro/nano-processing technologies have recently drawn considerable attention. Although room temperature single-spin manipulation of colour centres in SiC has…
The silicon-vacancy centre (SiV) in diamond has interesting vibronic features. We demonstrate that the zero phonon line position can be used to reliably identify the silicon isotope present in a single centre. This is of interest for…
A central aim of quantum information processing is the efficient entanglement of multiple stationary quantum memories via photons. Among solid-state systems, the nitrogen-vacancy (NV) centre in diamond has emerged as an excellent optically…
The nitrogen vacancy (NV) center in diamond exhibits spin-dependent fluorescence and long spin coherence times under ambient conditions, enabling applications in quantum information processing and sensing. NV centers near the surface can…
Cubic silicon carbide is an excellent platform for integration of defect qubits into established wafer scale device architectures for quantum information and sensing applications, where divacancy qubit, that is similar to the negatively…
The practical implementation of many quantum technologies relies on the development of robust and bright single photon sources that operate at room temperature. The negatively charged silicon-vacancy (SiV-) color center in diamond is a…