Related papers: Hyperfine-induced dephasing in three-electron spin…
We introduce a solid-state qubit in which exchange interactions among confined electrons provide both the static longitudinal field and the oscillatory transverse field, allowing rapid and full qubit control via rf gate-voltage pulses. We…
We investigate decoherence due to pure dephasing of a localized spin qubit interacting with a nuclear spin bath. Although in the limit of a very large magnetic field the only decoherence mechanism is spectral diffusion due to dipolar…
We address the decoherence of a localized electron spin in an external magnetic field due to the hyperfine interaction with a lattice of nuclear spins. Using a completely non-perturbative method, rigorous bounds on the T_1 and T_2 coherence…
We predict a spin pure dephasing channel in electron relaxation between states with unequal Zeeman splittings, exemplified by a spin-preserving electron tunneling between quantum dots in a magnetic field. The dephasing is caused by a…
The goal of this article is to review the progress of three-electron spin qubits from their inception to the state of the art. We direct the main focus towards the resonant exchange (RX) qubit and the exchange-only qubit, but we also…
We study electron-phonon interaction induced decoherence between two-electron singlet and triplet states in a semiconductor double quantum dot using a spin-boson model. We investigate the onset and time evolution of this dephasing, and…
We study the dynamics of an electron spin in a graphene quantum dot, which is interacting with a bath of less than ten nuclear spins via the anisotropic hyperfine interaction. Due to substantial progress in the fabrication of graphene…
Relaxation and dephasing of hole spins are measured in a gate-defined Ge/Si nanowire double quantum dot using a fast pulsed-gate method and dispersive readout. An inhomogeneous dephasing time $T_2^* \sim 0.18~\mathrm{\mu s}$ exceeds…
Understanding the spin dephasing mechanism is of fundamental importance in all potential applications of the spin qubit. Here we demonstrate a spin dephasing mechanism in semiconductor quantum dot due to the $1/f$ charge noise. The…
Molecular spins offer promise in emerging quantum technologies such as quantum sensing and computing. At low temperatures, nuclear spin-spin interactions affect electron spin coherence lifetimes through pure dephasing. Nuclear-spin noise…
Electron spin dephasing in a singly charged semiconductor quantum dot can partially be suppressed by periodic laser pulsing. We propose a semi-classical approach describing the decoherence of the electron spin polarization governed by the…
A slanting magnetic field is usually used to realize a slight hybridization between the spin and orbital degrees of freedom in a semiconductor quantum dot, such that the spin is manipulable by an external oscillating electric field. Here we…
We measure the dynamics of nuclear spins in a self-assembled quantum dot at a magnetic field of 5 Tesla and identify two distinct mechanisms responsible for the decay of the Overhauser field. We attribute a temperature-independent decay…
We propose a scheme for the detection of qubit-environment entanglement at time $\tau$ which requires only operations and measurements on the qubit, all within reach of current experimental state-of-the-art. The scheme works for any type of…
Unexpected fluctuating charge field near a semiconductor quantum dot has severely limited the coherence time of the localized spin qubit. It is the interplay between the spin-orbit coupling and the asymmetrical confining potential in a…
The dephasing time of spin-orbit qubits is limited by the coupling with electrical and charge noise. However, there may exist "dephasing sweet spots" where the qubit decouples (to first order) from the noise so that the dephasing time…
We theoretically study the interplay of spin-orbit and hyperfine interactions in dynamical nuclear polarization in two-electron semiconductor double quantum dots near the singlet $(S)$ - triplet $(T_+)$ anticrossing. The goal of the scheme…
The ground-state spin of optically active defects in hexagonal boron nitride (hBN) offers a promising platform for quantum information applications, such as qubits for quantum computing and nanoscale sensing. A key characteristic of a qubit…
Spin qubits in Silicon quantum dots can have long coherence times, yet their manipulation relies on the exchange interaction, through which charge noise can induce decoherence. Charge traps near the interface of a Si heterostructure lead to…
The electron dephasing time $\tau_{\phi}$ in a diffusive quantum dot is calculated by considering the interaction between the electron and dynamical defects, modelled as two-level system. Using the standard tunneling model of glasses, we…