Related papers: Impact Ionization in $\beta-Ga_2O_3$
In this work, we investigate the ionization of silicon by electron impacts in hot plasmas. Our calculations of the cross sections and rates rely on the Coulomb-Born-Exchange, Binary-Encounter-Dipole and Distorted-Wave methods implemented in…
Using two-dimensional THz spectroscopy in combination with numerical models, we investigate the dynamics linked to carrier multiplication caused by high-field THz excitation of the low-gap semiconductor InSb. In addition to previously…
Results are presented of a fully ab-initio calculation of impact ionization rates in GaAs within the density functional theory framework, using a screened-exchange formalism and the highly precise all-electron full-potential linearized…
Impact ionization coefficients of anisotropic monoclinic $\beta $-Ga$_{2}$O$_{3}$ are estimated along four crystallographic directions and the plot for the $\left[ 010 \right]$ direction is shown. The approximation models were fitted to…
The layout of a new instrument designed to study the interaction of highly charged ions with surfaces, which consists of an ion source, a beamline including charge separation and a target chamber, is presented here. By varying the charge…
Strong field photoelectron holography has been proposed as a means for interrogating the spatial and temporal information of electrons and ions in a dynamic system. After ionization, part of the electron wave packet may directly go to the…
We present quantum-mechanical theory of impact ionization in semiconductors with the direct band gap in \$\Gamma\$-point. It is shown that energy dependence of the impact ionization rate \$\mathcal{W}(E)\$ near a threshold \$E_{th}\$ is…
Heavy-ion collisions undergo various stages in their evolution and it is crucial to disentangle the initial- and final-stage effects. In this work, we report measurements of two types of observables: (i) charge-dependent directed flow…
The ionization by photon or electron impact of the inner (2a1) and outer (1t2) valence orbitals of the CH4 molecule is investigated theoretically. In spite of a number of approximations, including a monocentric approach and a rather simple…
The impact ionization rate and its orientation dependence in k space is calculated for ZnS. The numerical results indicate a strong correlation to the band structure. The use of a q-dependent screening function for the Coulomb interaction…
In a multi-electrode device, the motion of free charge carriers generated by ionizing radiation induces currents on all the electrodes surrounding the active region [1]. The amount of charge induced in each sensitive electrode is a function…
We investigate the high-field transport in monoclinic \(\beta\)-Ga\textsubscript{2}O\textsubscript{3}} using a combination of ab initio calculations and full band Monte Carlo (FBMC) simulation. Scattering rate calculation and the final…
In strong-field ionization interferences between electron trajectories create a variety of interference structures in the final momentum distributions. Among them, the interferences between electron pathways that are driven directly to the…
$\beta-Ga_{2}O_{3}$ is an unusual semiconductor where large electric fields (~1-6 MV/cm) can be applied while still maintaining a dominant excitonic absorption peak below its ultra-wide bandgap. This provides a rare opportunity in the…
Electromagnetic field produced in high-energy heavy-ion collisions contains much useful information, because the field can be directly related to the motion of the matter in the whole stage of the reaction. One can divide the total…
Ab initio wavefunction based methods are applied to the study of electron correlation effects on the band structure of oxide systems. We choose MgO as a prototype closed-shell ionic oxide. Our analysis is based on a local Hamiltonian…
We report angle-dependent magnetoresistance measurements on (TMTSF)2ClO4 that provide strong support for a new macroscopic quantum phenomenon, the interference commensurate (IC) effect, in quasi-one dimensional metals. In addition to…
This study investigates the ionization and excitation processes induced by electron impact between two configurations or superconfigurations. Rate coefficients are calculated for transition arrays or super-transition arrays rather than…
Ultrawide bandgap semiconductor gallium oxide (Ga2O3) and its polymorphs have recently attracted increasing attention across physics, materials science, and electronics communities. In particular, the self-organized formation of the…
Ultrawide bandgap semiconductor $\beta$-Ga2O3 holds extensive potential for applications in high-radiation environments. One of the primary challenges in its practical application is unveiling the mechanisms of surface irradiation damage…