Related papers: Simultaneous readout of two adjacent bit tracks wi…
The increasing capacity of modern computers, driven by Moore's Law, is accompanied by smaller noise margins and higher error rates. In this paper we propose a memory device, consisting of a ring of two identical overdamped bistable…
The discovery of the spin torque effect has made magnetic nanodevices realistic candidates for active elements of memory devices and applications. Magnetoresistive effects allow the read-out of increasingly small magnetic bits, and the spin…
This paper presents mathematical modeling and numerical analysis of bifurcation and synchronization phenomena in a system of coupled oscillators driven by a finite-power energy source and generating two-dimensional stick-slip…
We describe an equivalent circuit model applicable to a wide variety of magnetoelectric phenomena and use SPICE simulations to benchmark this model against experimental data. We use this model to suggest a different mode of operation where…
In semiconductor nanostructures, spin blockade (SB) is the most scalable mechanism for electrical spin readout, requiring only two bound spins for its implementation. In conjunction with charge sensing techniques, SB has led to…
We consider a biaxial macrospin with an easy and hard axis, and study its dynamical evolution under the combined effects of thermal noise and spin transfer torque. The spin-torque is associated with both a perpendicularly magnetized…
Multiple neuromorphic applications require the tuning of two or more devices to a common signal. Various types of neuromorphic computation can be realized using spintronic oscillators, where the DC current induces magnetization precession,…
The integration of single-atom bits enables the realization of the highest data-density memory. Reading and writing information to these bits through mechanical interactions opens the possibility of operating the magnetic devices with low…
Silicon spin qubits based on metal-oxide-semiconductor (MOS) technology are compatible with semiconductor manufacturing and offer a route to scalable quantum processing. However, spin readout typically relies on proximal charge sensors,…
Arrays of spin-torque nano-oscillators are promising for broadband microwave signal detection and processing, as well as for neuromorphic computing. In many of these applications, the oscillators should be engineered to have equally-spaced…
Two-level quantum systems with strong spin-orbit coupling allow for all-electrical qubit control and long-distance qubit coupling via microwave and phonon cavities, making them of particular interest for scalable quantum information…
The dynamics of a spin-torque-oscillator (STO) coupled with a nano-magnet through dipole-dipole interaction was studied numerically by using the macrospin model for the application of the STO as a read head sensor of hard disk drives. We…
Extracting quantitative information of neuronal signals by non-invasive imaging is an outstanding challenge for understanding brain function and pathology. However, state-of-the-art techniques offer low sensitivity to deep electrical…
We apply an analysis of time-dependent spin-polarized current in a semiconductor channel at room temperature to establish how the magnetization configuration and dynamics of three ferromagnetic terminals, two of them biased and third…
Non-linear magnetization dynamics in ferromagnetic nanoelements excited by the spin-polarized dc-current is one of the most intensively studied phenomena in solid state magnetism. Despite immense efforts, synchronization of oscillations…
This letter introduces a micromagnetic model able to characterize the magnetization dynamics in three terminal magnetic tunnel junctions, where the effects of spin-transfer torque and spin-orbit torque are taken into account. Our results…
Current-induced self-sustained magnetization oscillations in spin-torque nano-oscillators (STNOs) are promising candidates for ultra-agile microwave sources or detectors. While usually STNOs behave as a monochrome source, we report here…
Single-molecule memory device based on a single-molecule magnet (SMM) is one of the ultimate goals of semiconductor nanofabrication technologies. Here, we study how to manipulate and readout the SMM's two spin-state of stored information…
The possible use of spin and magnets in place of charge and capacitors to store and process information is well known. Magnetic tunnel junctions are being widely investigated and developed for magnetic random access memories. These are two…
Coupled oscillator-based networks are an attractive approach for implementing hardware neural networks based on emerging nanotechnologies. However, the readout of the state of a coupled oscillator network is a difficult challenge in…