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The implementation of graphene in semiconducting technology requires the precise knowledge about the graphene-semiconductor interface. In our work the structure and electronic properties of the graphene/$n$-Ge(110) interface are…

The recent discovery of the ability to perform direct epitaxial growth of graphene layers on semiconductor Ge surfaces led to the huge interest to this topic. One of the reasons for this interest is the chance to overcome several…

Materials Science · Physics 2020-10-20 Yuriy Dedkov , Elena Voloshina

Graphene, being one-atom thick, is extremely sensitive to the presence of adsorbed atoms and molecules and, more generally, to defects such as vacancies, holes and/or substitutional dopants. This property, apart from being directly usable…

Materials Science · Physics 2011-04-08 Rocco Martinazzo , Simone Casolo , Gian Franco Tantardini

Graphene is generally considered to be a strong candidate to succeed silicon as an electronic material. However, to date, it actually has not yet demonstrated capabilities that exceed standard semiconducting materials. Currently…

Mesoscale and Nanoscale Physics · Physics 2015-06-04 Yike Hu , Ming Ruan , Zelei Guo , Rui Dong , James Palmer , John Hankinson , Claire Berger , Walt A. de Heer

Graphene has recently been attracting considerable interest because of its exceptional conductivity, mechanical strength, thermal stability, etc. Graphene-based devices exhibit high potential for applications in flexible electronics,…

Applied Physics · Physics 2018-08-06 Viet Phuong Pham

Graphene-metal interface as one of the interesting graphene-based objects attracts much attention from both application and fundamental science points of view. This paper gives a timely review of the recent experimental works on the growth…

Materials Science · Physics 2015-07-10 Yuriy Dedkov , Elena Voloshina

We quantify the mechanisms for manganese (Mn) diffusion through graphene in Mn/graphene/Ge (001) and Mn/graphene/GaAs (001) heterostructures for samples prepared by graphene layer transfer versus graphene growth directly on the…

The practical difficulties to use graphene in microelectronics and optoelectronics is that the available methods to grow graphene are not easily integrated in the mainstream technologies. A growth method that could overcome at least some of…

Graphene, the two-dimensional form of carbon presents outstanding electronic and transport properties. This gives hope for the development of applications in nanoelectronics. However, for industrial purpose, graphene has to be supported by…

Materials Science · Physics 2015-05-13 L. Magaud , F. Hiebel , F. Varchon , P. Mallet , J. -Y. Veuillen

Among the many anticipated applications of graphene, some - such as transistors for Si microelectronics - would greatly benefit from the possibility to deposit graphene directly on a semiconductor grown on a Si wafer. We report that Ge(001)…

We probe the local inhomogeneities of the electronic properties of graphene at the nanoscale using scanning probe microscopy techniques. First, we focus on the study of the electronic inhomogeneities caused by the graphene-substrate…

Mesoscale and Nanoscale Physics · Physics 2012-10-16 A. Castellanos-Gomez , Arramel , M. Wojtaszek , R. H. M. Smit , N. Tombros , N. Agraït , B. J. van Wees , G. Rubio-Bollinger

Graphene grown on metal surface, Cu(111), with a boron nitride(BN) buffer layer is studied for the first time. Our first-principles calculations reveal that charge is transferred from the copper substrate to graphene through the BN buffer…

Materials Science · Physics 2007-12-27 Y. H. Lu , P. M. He , Y. P. Feng

Based on first principles calculation, the electronic properties of graphene on metal (Ti, Ca, Ni, Mn, Co, Fe, Cr, K) modified SiO2 substrate have been studied. The results of binding energies supported graphene indicate that the metal…

Mesoscale and Nanoscale Physics · Physics 2012-03-02 L. Shen , F. Jiang , M. Xiao , R. Zhang , M. X. Yu , L. Miao , J. J. Jiang

Density functional theory has been employed to study graphene on the (111), (100) and (110) surfaces of silicon (Si) substrates. There are several interesting findings. First, carbon atoms in graphene form covalent bonds with Si atoms, when…

Materials Science · Physics 2021-07-14 Y. W. Sun , D. Holec , D. Gehringer , L. Li , O. Fenwick , D. J. Dunstan , C. J. Humphreys

We have used low-energy electron diffraction and microscopy to compare the growth of graphene on hydrogen-free Ge(111) and Ge(110) from an atomic carbon flux. Growth on Ge(110) leads to significantly better rotational alignment of graphene…

Materials Science · Physics 2015-10-21 P. C. Rogge , M. E. Foster , J. M. Wofford , K. F. McCarty , N. C. Bartelt , O. D. Dubon

Controlling the type and density of charge carriers by doping is the key step for developing graphene electronics. However, direct doping of graphene is rather a challenge. Based on first-principles calculations, a concept of overcoming…

Mesoscale and Nanoscale Physics · Physics 2011-07-26 Bing Huang , Hongjun Xiang , Su-Huai Wei

Two-dimensional graphene exhibits many fascinating properties such as ballistic electronic conduction and quantum Hall effect at room temperature.1-4 Graphene doped electrochemically or through charge-transfer with electron-donor and…

A blueprint for producing scalable digital graphene electronics has remained elusive. Current methods to produce semiconducting-metallic graphene networks all suffer from either stringent lithographic demands that prevent reproducibility,…

Mesoscale and Nanoscale Physics · Physics 2015-06-11 J. Hicks , A. Tejeda , A. Taleb-Ibrahimi , M. S. Nevius , F. Wang , K. Shepperd , J. Palmer , F. Bertran , P. Le Fèvre , J. Kunc , W. A. de Heer , C. Berger , E. H. Conrad

Few-layer graphene deposited on semiconductor nanorods separated by undoped spacers has been studied in perspective for the fabrication of stable nanoresonators. We show that an applied bias between the graphene layer and the nanorod…

The electronic properties of a material depend on the spatial freedom of the electron wavefunction. A well-known example is graphite, which is a conventional gapless semiconductor, while a single layer of it, graphene, exhibits extremely…

Mesoscale and Nanoscale Physics · Physics 2026-01-28 Mohammadamir Bazrafshan , Thomas. D. Kühne
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