Related papers: Boron-doped diamond
Recent advances in the characterization of hexagonal-diamond silicon (2H-Si) have shown that this material possesses remarkably different structural, electronic, and optical properties as compared to the common cubic-diamond (3C) polytype.…
Electrostatic doping into an $n$-type Mott insulator Sm$_{2}$CuO$_{4}$ has been successfully achieved with use of the heterojunction with an $n$-type band semiconductor Nb-doped SrTiO$_{3}$. The junction exhibits rectifying current-voltage…
For doped two-dimensional Mott insulators in their normal state, the challenge is to understand the evolution from a conventional metal at high doping to a strongly correlated metal near the Mott insulator at zero doping. To this end, we…
Correlated electrons in a binary alloy $A_{x}B_{1-x}$ are investigated within the Hubbard model and dynamical mean--field theory (DMFT). The random energies $\epsilon_{i}$ have a bimodal probability distribution and an energy separation…
We observe a complex change in the hopping exponent value from 1/2 to 1/3 as a function of disorder strength and electron density in a sodium-doped silicon MOSFET. The disorder was varied by applying a gate voltage and thermally drifting…
While doping is widely used for tuning physical properties of perovskites in experiments, it remains a challenge to exactly know how doping achieves the desired effects. Here, we propose an empirical and computationally tractable model to…
To investigate whether the dense Kondo compound CeB6 might evolve into a topological insulator under sufficient pressure, four-point electrical resistivity measurements have been carried out over the temperature range 1.3 K to 295 K in a…
Compressibility of high-purity nanostructured cBN has been studied under quasi-hydrostatic conditions at 300 K up to 35 GPa using diamond anvil cell and angle-dispersive synchrotron X-ray powder diffraction. A data fit to the Vinet equation…
Compressibility of boron subphosphide B12P2 has been studied under quasi-hydrostatic conditions up to 26 GPa and 2600 K using laser-heated diamond anvil cell and angle-dispersive synchrotron X-ray diffraction. 300-K data fit yields the…
If superconductivity is induced in the metallic surface states of topological insulators via proximity, Majorana modes will be trapped on the vortex cores. The same effects hold for doped topological insulators which become bulk s-wave…
Jump rates of muonium and hydrogen in diamond are calculated by quantum transition-state theory, based on the path-integral centroid formalism. This technique allows us to study the influence of vibrational mode quantization on the…
Neutron single crystal diffraction and rotational anisotropy optical second harmonic generation data are presented resolving the nature of the structural distortion realized in electron-doped (Sr$_{1-x}$La$_x$)$_3$Ir$_2$O$_7$ with $x=0.035$…
We report the doping dependence of the order of the ferromagnetic metal to paramagnetic insulator phase transition in La1-xCaxMnO3. At x = 0.33, magnetization and specific heat data show a first order transition, with an entropy change (2.3…
The upper critical field, $H_{c2}$, of Mg(B$_{1-x}$C$_x$)$_2$ has been measured in order to probe the maximum magnetic field range for superconductivity that can be attained by C doping. Carbon doped boron filaments are prepared by CVD…
We investigated metal-insulator transitions for double layer two-dimensional electron hole systems in transition metal dicalcogenides (TMDC) stacked on opposite sides of thin layers of boron nitride (BN). The interparticle interaction is…
BaTiO3 is typically a strong n-type material with tuneable optoelectronic properties via doping and controlling the synthesis conditions. It has a wide band gap that can only harness the ultraviolet region of the solar spectrum. Despite…
Experimentally Cr doping in the rutile phase of VO$_2$ is found to stabilize a charge ordered ferromagnetic insulating state in the doping range of 10\% to 20\%. In this work, we investigated its origin at 12.5\% Cr doping using a…
Point defects are responsible for a wide range of optoelectronic properties in materials, making it crucial to engineer their concentrations for novel materials design. However, considering the plethora of defects in co-doped semiconducting…
To fully deploy the potential of semiconductor nanocrystal films as low-cost electronic materials, a better understanding of the amount of dopants required to make their conductivity metallic is needed. In bulk semiconductors, the critical…
We report on a detailed analysis of the superconducting properties of boron-doped silicon films grown along the 001 direction by Gas Immersion Laser Doping. The doping concentration cB has been varied up to approx. 10 at.% by increasing the…