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Related papers: Defects and oxidation resilience in $InSe$

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We report a comprehensive first-principles study of the thermodynamics and transport of intrinsic point defects in layered oxide cathode materials LiMO$_2$ (M=Co, Ni), using density-functional theory and the Heyd-Scuseria-Ernzerhof screened…

Materials Science · Physics 2014-12-17 Khang Hoang , Michelle D. Johannes

Recently fabricated InSe monolayers exhibit remarkable characteristics that indicate the potential of this material to host a number of many-body phenomena. Here, we consistently describe collective electronic effects in hole-doped InSe…

Materials Science · Physics 2023-01-10 E. A. Stepanov , V. Harkov , M. Rösner , A. I. Lichtenstein , M. I. Katsnelson , A. N. Rudenko

Monolayer FeSe on SrTiO$_3$ superconducts with reported $T_\mathrm{c}$ as high as 100 K, but the dramatic interfacial $T_\mathrm{c}$ enhancement remains poorly understood. Oxygen vacancies in SrTiO$_3$ are known to enhance the interfacial…

Scalar field theory with large infrared initial occupancy develops very large deep-infrared occupancy, which locally resembles a Bose-Einstein condensate. We study the structure and spatial coherence of this condensate. The O(N) symmetric…

High Energy Physics - Phenomenology · Physics 2016-03-30 Guy D. Moore

Surface oxides are associated with two-level systems (TLSs) that degrade the performance of niobium-based superconducting quantum computing devices. To address this, we introduce a predictive framework for selecting metal capping layers…

The stability of intrinsic point defects in Be$_{12}$X intermetallics (where X = Ti, V, Mo or W) are predicted using density functional theory simulations and discussed with respect to fusion energy applications. Schottky disorder is found…

Materials Science · Physics 2017-08-04 Matthew L Jackson , Patrick A Burr , Robin W Grimes

The role of intrinsic defects has been investigated to determine binding energies and the electronic structure of Gd complexes in ZnO. We use density-functional theory and the GW method to show that the presence of vacancies and…

Materials Science · Physics 2018-01-23 A. L. Rosa , Th. Frauenheim

This work presents an in-depth investigation of the properties of complexes composed of hydrogen, silicon or oxygen with carbon, which are major unintentional impurities in undoped GaN. This manuscript is a complement to our previous work…

Materials Science · Physics 2017-06-20 Masahiko Matsubara , Enrico Bellotti

We study the dependence of the formation energies of oxygen and metal induced defects in Ta2O5, TaO2, TaO, TiO2 and Ti4O7 on the chemical potential of electron and atomic constitutes. In the study of single defect, metal induced defects are…

Materials Science · Physics 2016-02-25 Ziyang Zhang , Huanglong Li , Luping Shi

Combining high resolution scanning tunneling microscopy and first principle calculations, we identified the major native defects, in particular the Se vacancies and Se interstitial defects that are responsible for the bulk conduction and…

Materials Science · Physics 2016-09-07 Jixia Dai , Damien West , Xueyun Wang , Yazong Wang , Daniel Kwok , S-W. Cheong , S. B. Zhang , Weida Wu

Modification of physical properties of materials and design of materials with on-demand characteristics is at the heart of modern technology. Rare application relies on pure materials--most devices and technologies require careful design of…

Hyperdoping has emerged as a promising method for designing semiconductors with unique optical and electronic properties, although such properties currently lack a clear microscopic explanation. Combining computational and experimental…

Using first-principles method within the framework of the density functional theory, we study the influence of native point defect on the structural and electronic properties of Bi$_2$Se$_3$. Se vacancy in Bi$_2$Se$_3$ is a double donor,…

Materials Science · Physics 2012-07-03 L. Xue , P. Zhou , C. X. Zhang , C. Y. He , G. L. Hao , L. Z. Sun , J. X. Zhong

Creation of defect with predetermined optical, chemical and other characteristics is a powerful tool to enhance the functionalities of materials. Herewith, we utilize density functional theory to understand the microscopic mechanisms of…

Materials Science · Physics 2022-08-31 P. Huang , M. Grzeszczyk , K. Vaklinova , K. Watanabe , T. Taniguchi , K. S. Novoselov , M. Koperski

We investigate thermodynamic and electronic properties of group IV (C, Si, Ge, Sn) and group VI (O, S, Se, Te) impurities as well as P and H in aluminum antimonide (AlSb) using first-principles calculations. To this end, we compute the…

Materials Science · Physics 2010-09-06 Paul Erhart , Daniel Åberg , Vincenzo Lordi

Two-dimensional (2D) $\beta$-TeO$_2$ has gained attention as a promising material for optoelectronic and power device applications, thanks to its transparency and high hole mobility. However, the underlying mechanism behind its $p$-type…

Mesoscale and Nanoscale Physics · Physics 2025-01-08 Rafael Costa-Amaral , Soungmin Bae , Vu Thi Ngoc Huyen , Yu Kumagai

Structural, electronic and thermodynamic properties of native defects in GaS and GaSe monolayers are investigated by means of accurate ab-initio calculations. Based on their charge transition levels we assess the influence of the studied…

Materials Science · Physics 2023-04-27 Daniel Barragan-Yani , Jonathan M. Polfus , Ludger Wirtz

The normal state of the recently discovered Iron Selenide (FeSe)-based superconductors shows a range of inexplicable features. Along with bad-metallic resistivity, characteristic pseudogap features and proximity to insulating states,…

Superconductivity · Physics 2010-01-20 L. Craco , M. S. Laad

Graphene like 2D materials have attracted tremendous attention in the field of photocatalytic water splitting. Indium Selenide (InSe) is one such potential material. Here, we report the effect of Tellurium on InSe monolayer for the…

Materials Science · Physics 2016-10-04 M. R. Ashwin Kishore , P. Ravindran

Amorphous oxide semiconductors, especially indium oxide-based (InOx) thin-films, have been major candidates for high mobility with easy-to-use device processability. As one of the dopants in InOx semiconductors, we proposed Si to design a…

Materials Science · Physics 2019-06-25 Shinya Aikawa , Toshihide Nabatame , Kazuhito Tsukagoshi