Related papers: Resonant single-parameter pumping in graphene
We study the quantum version of a tilting and flashing Hamiltonian ratchets, consisting of a periodic potential and a time-periodic driving field. The system dynamics is governed by a Floquet evolution matrix bearing the symmetry of the…
We demonstrate dispersive readout of individual charge states in a gate-defined few-electron quantum dot in bilayer graphene. We employ a radio frequency reflectometry circuit, where an LC resonator with a resonance frequency close to 280…
Electric transport of double gated bilayer graphene devices is studied as a function of charge density and bandgap. A top gate electrode can be used to control locally the Fermi level to create a pn junction between the double-gated and…
We show that charge carrier transport in graphene exhibit sharp resonances in the presence of spatially and temporarily modulated scattering. Resonances occur when the period of an applied a-c field corresponds to the time taken by…
This paper is devoted to the analysis of an abstract formula describing quantum adiabatic charge pumping in a general context. We consider closed systems characterized by a slowly varying time-dependent Hamiltonian depending on an external…
The spin orbit effect in graphene is too muted to have any observable significance with respect to its application in spintronics. However, graphene technology is too valuable to be rendered impotent to spin transport. In this communication…
In this paper, we show that the application of propagating waves can induce a DC current even in systems with spatial inversion symmetry. We derive the equation for the DC current induced by propagating waves using two methods: perturbation…
We propose an explicit small-signal graphene field-effect transistor (GFET) parameter extraction procedure based on a charge-based quasi-static model. The dependence of the small-signal parameters on both gate voltage and frequency is…
We present a theoretical study of the electronic transport through a many-level quantum dot driven by time-dependent signals applied at the contacts to the leads. If the barriers oscillate out of phase the system operates like a turnstile…
We report the direct observation of polarization resolved electronic Raman scattering in a gated monolayer graphene device. The evolution of the electronic Raman scattering spectra with gate voltage and its polarization dependence are in…
Adsorbates on graphene can create resonances that lead to efficient electron scattering and strongly affect the electronic conductivity. Therefore a proper description of these resonances is important to get a good insight of their effect…
The fabrication of single atom transistors paved the way for electronics based on single dopants. Recently the spectrum of a single dopant was measured electrically by coupling two such devices. The next step towards promising…
We calculate a pump current in a classical two-state stochastic chemical kinetics by means of the non-adiabatic geometrical phase interpretation. The two-state system is attached to two particle reservoirs, and under a periodic perturbation…
We consider pumping through a small quantum dot separated from the leads by two point contacts, whose conductances, $G_{1}$ and $G_{2}$, serve as pumping parameters. When the dot is pincched, we find that there is a "resonance line" in the…
We investigate the collective electron dynamics in a recently proposed graphene-based terahertz emitter under the influence of the radiative damping effect, which is included self-consistently in a molecular dynamics approach. We show that…
A fitting model is developed for accounting the asymmetric ambipolarities in the I-V characteristics of graphene field-effect transistors (G-FETs) with doped channels, originating from the thermionic emission and interband tunneling at the…
We have investigated electron dynamics in top gated graphene by measuring the gate admittance of a diffusive graphene capacitor in a broad frequency range as a function of carrier density. The density of states, conductivity and diffusion…
Conductions fluctuations (CF) are studied in single layer graphene devices with superconducting source and drain contacts made from aluminium. The CF are found to be enhanced by superconductivity by a factor of 1.4 to 2. This (near)…
We obtain the output and transfer characteristics of graphene field-effect transistors by using the charge-control model for the current, based on the solution of the Boltzmann equation in the field-dependent relaxation time approximation.…
We analyze the scattering sector of the Hamiltonians for both gapless and gapped graphene in the presence of a charge impurity using the 2D Dirac equation, which is applicable in the long wavelength limit. We show that for certain range of…