Related papers: Spectroscopy of multi-electrode tunnel barriers
We have studied the bound states of the extra electron in a molecular wire, corresponding to the physical situation of the electron tunneling through the wire. Based on formalism of the scattering operator that accounts for many-electron…
For electrons tunneling between parallel two-dimensional electron systems, conservation of in-plane momentum produces sharply resonant current-voltage characteristics and provides a uniquely sensitive probe of the underlying electronic…
Temperature dependence of the tunnel magnetoresistance (TMR) was calculated in range of the quantum-ballistic model in the magnetic tunnel junctions (MTJs) with embedded nanoparticles (NPs). The electron tunnel transport through NP was…
Spin-dependent electronic transport through multiferroic Co/PbTiO$_{3}$/Co tunnel junctions is studied theoretically. Conductances calculated within the Landauer-B\"uttiker formalism yield both a large tunnel magnetoresistance (TMR) and a…
We propose a new method for creating far-field optical barrier potentials for ultracold atoms with widths that are narrower than the diffraction limit and can approach tens of nanometers. The reduced widths stem from the nonlinear atomic…
We develop a series of propensity rules for interpreting Inelastic Electron Tunneling (IET) spectra of single-molecule transport junctions. IETS has no selection rules, such as those seen in optical, infrared and Raman spectra, because IETS…
Strongly correlated transport of interacting electrons through the one-dimensional tunnel contact is considered within the Luttinger liquid model of one-dimensional electrodes on arbitrary time scales $ t> \hbar /\Lambda_{g} $. Using…
Typical measurements of nanowire devices rely on end-to-end measurements to reveal mesoscopic phenomena such as quantized conductance or Coulomb blockade. However, creating nanoscale tunnel junctions allows one to directly measure other…
Molecular systems can exhibit a complex, chemically tailorable inner structure which allows for targeting of specific mechanical, electronic and optical properties. At the single-molecule level, two major complementary ways to explore these…
We investigate strong mechanical feedback for the single-electron tunneling device coupled to an underdamped harmonic oscillator in the high-frequency case, when the mechanical energy of the oscillator exceeds the tunnel rate, and for weak…
The dependence of tunneling conductance and tunneling magnetoresistance (TMR) on barrier thickness in magnetic tunnel junctions is theoretically investigated. The complex band structure of the insulator is taken into account, and an…
We fabricate and measure electrically-gated tunnel junctions in which the insulating barrier is a sliding van der Waals ferroelectric made from parallel-stacked bilayer hexagonal boron nitride and the electrodes are single-layer graphene.…
The chiral Luttinger liquid model for the edge dynamics of a two-dimensional electron gas in a strong magnetic field is derived from coarse-graining and a lowest Landau level projection procedure at arbitrary filling factors $\nu<1$ --…
We used analytical methods to study the interaction of electrons with shunted models consisting of a rectangular, triangular, or delta function. potential barrier in series with a pre-barrier region at zero potential. In each model the…
Based on the non-equilibrium Green's function (NEGF) technique and the Landauer-B\"{u}ttiker theory, the possibility of a molecular spin-electronic device, which consists of a single C$_{60}$ molecule attached to two ferromagnetic…
Tunneling is measured via the quantum levels of a metal nanoparticle. We analyze quantitatively the resonance energies, widths, and amplitudes, both in the regime where only one state is accessible for tunneling and in the non-equilibrium…
Transition metal dichalcogenides (TMDs) are layered semiconducting van der Waal crystals and promising materials for a wide range of electronic and optoelectronic devices. Realizing practical electrical and optoelectronic device…
We consider a transmission line resonator which is driven by electrons tunneling through a voltage-biased tunnel junction. Using the Born-Markovian quantum master equation in the polaron basis we investigate the nonequilibrium photon state…
We present a new empirical pseudopotential (EPM) calculation approach to simulate the million atom nanostructured semiconductor devices under potential bias using the periodic boundary conditions. To treat the non-equilibrium condition,…
Low-temperature scanning tunneling spectroscopy allows to probe the electronic properties of clusters at surfaces with unprecedented accuracy. By means of quantum transport theory, using realistic tunneling tips, we obtain conductance…