Related papers: Quantum light in curved low dimensional hexagonal …
Single-photon emitters serve as building blocks for many emerging concepts in quantum photonics. The recent identification of bright, tunable, and stable emitters in hexagonal boron nitride (hBN) has opened the door to quantum platforms…
Hexagonal boron nitride (hBN), a two-dimensional (2D) material, garners interest for hosting bright quantum emitters at room temperature. A great variety of fabrication processes have been proposed with various yields of quantum emitters.…
Hexagonal boron nitride (hBN) plays a central role in nanoelectronics and nanophotonics. Moreover, hBN hosts room-temperature quantum emitters and optically addressable spins, making it promising for quantum sensing and quantum photonics.…
Single photon emitters in two-dimensional materials are promising candidates for future generation of quantum photonic technologies. In this work, we experimentally determine the quantum efficiency (QE) of single photon emitters (SPE) in…
Rhombohedral boron nitride (rBN) is an emerging wide-bandgap van der Waals (vdW) material that combines strong second-order nonlinear optical properties with the structural flexibility of layered 2D systems. Here we show that rBN hosts…
Collective light emission from many-body quantum systems is a cornerstone of quantum optics, yet its implementation in solid-state platforms operating under ambient conditions remains highly challenging. Large-bandgap van der Waals…
Forming single-photon emitters (SPEs) in insulating hexagonal boron nitride (hBN) has sparked wide interests in the quantum photonics. Despite significant progress, it remains challenging to deterministically create SPEs at precise…
Understanding the properties of novel solid-state quantum emitters is pivotal for a variety of applications in field ranging from quantum optics to biology. Recently discovered defects in hexagonal boron nitride are especially interesting,…
Optically addressable spins associated with defects in wide-bandgap semiconductors are versatile platforms for quantum information processing and nanoscale sensing, where spin-dependent inter-system crossing (ISC) transitions facilitate…
Atomically thin two-dimensional (2D) hexagonal boron nitride (hBN) has emerged as an essential material for the encapsulation layer in van der Waals heterostructures and efficient deep ultra-violet optoelectronics. This is primarily due to…
Luminescent defect-centers in hexagonal boron nitride (hBN) have emerged as a promising 2D-source of single photon emitters (SPEs) due to their high brightness and robust operation at room temperature. The ability to create such emitters…
Quantum emitters in hexagonal boron nitride (hBN) are promising building blocks for the realization of integrated quantum photonic systems. However, their spectral inhomogeneity currently limits their potential applications. Here, we apply…
Solid-state quantum emitters constitute an essential building blocks of integrated quantum photonic circuits. Among potential emitter platforms, hexagonal boron nitride (hBN) hosts single-photon emitters in an atomically thin lattice…
The ability to locally activate or generate quantum emitters in two-dimensional materials is of major interest for the realization of integrated quantum photonic devices. In particular, hexagonal boron nitride (hBN) has recently been shown…
Color centers in hexagonal boron nitride (hBN) are presently attracting broad interest as a novel platform for nanoscale sensing and quantum information processing. Unfortunately, their atomic structures remain largely elusive and only a…
Point defects in hexagonal boron nitride have emerged as a promising quantum light source due to their bright and photostable room temperature emission. In this work, we study the incorporation of quantum emitters during chemical vapor…
Recently, numerous techniques have been reported for generating optically active defects in exfoliated hexagonal boron nitride (hBN), which hold transformative potential for quantum photonic devices. However, achieving on-demand generation…
Light emitters in wide band gap semiconductors are of great fundamental interest and have potential as optically addressable qubits. Here we describe the discovery of a new color center in high-quality hexagonal boron nitride (h-BN) with a…
Quantum emitters based on atomic defects in layered hexagonal Boron Nitride (hBN) have emerged as promising solid state 'artificial atoms' with atom-like photophysical and quantum optoelectronic properties. Similar to other atom-like…
Color centers in hexagonal boron nitride (hBN) have recently emerged as promising candidates for a new wave of quantum applications. Thanks to hBN's high stability and 2-dimensional (2D) layered structure, color centers in hBN can serve as…