Related papers: Evidence for structural transition in crystalline …
We investigate the effect of post-deposition annealing (for temperatures from 848 K to 1273 K) on the chemical properties of crystalline Ta$_2$O$_5$ films grown on Si(100) substrates by radio frequency magnetron sputtering. The atomic…
In the present work, HfO2 thin film (100nm) has been deposited by sputtering technique and annealed at various temperatures ranging from 400 to 1000\degree (in step of 200 \degree) in O2 ambient for 10 min. The samples have been…
Al2O3 thin films have been deposited at substrate temperatures between 500{\deg}C to 600{\deg}C by reactive magnetron sputtering using an additional arbitrary substrate bias to tailor the energy distribution of the incident ions. The films…
A Li-Al-O thin film materials library, deposited by inert magnetron sputtering and post-deposition annealing in O2 atmosphere, was used to study the effects of different annealing temperatures (300 to 850{\deg}C) and durations (1 min to 7…
We have studied the influence of annealing treatment on the crystalline growth of SrFe_12_O_19 previously deposited on Si (100) substrates using radio frequency (RF) magnetron sputtering. For this goal, two grown films, with and without…
This investigation deals with the effect of annealing temperature on the structural, topographical and optical properties of Zinc Oxide thin films prepared by sol gel method. The structural properties were studied using X-ray diffraction…
This paper presents the effect of different cooling rate after annealing on structural and electrical properties of TiO2 thin films. Titanium dioxide thin film was deposited on a silicon substrate using DC magnetron technique. After…
Indium-tin oxide (ITO) is a crucial functional layer for the optoelectronic applications, such as non-volatile color display thin films based on the ITO/phase-change material (PCM)/ITO/reflective metal multilayer structures on a silicon…
This paper reveals the origin of variation in the magnitude and temperature dependence of the normal state resistivity frequently observed in different YBCO single crystal or thin film samples with the same $T_{c}$. We investigated…
The effect of annealing under a magnetic field on the microstructure and properties of YNixMn1-xO3 (x=0.33 and 0.5) films has been investigated. It is found that the ferromagnetic transition temperature is significantly enhanced after post…
Gallium oxide is an ultra-wide bandgap semiconductor with excellent opto-electronic properties, making it a highly promising material for a wide range of applications and devices. In this article, we report how the optical, morphological,…
The effect of argon ion bombardment on the chemical properties of crystalline Ta$_2$O$_5$ films grown on Si(100) substrates by radio frequency magnetron sputtering was investigated by X-ray photoelectron spectroscopy. All samples were…
Tantalum nitride thin films have been grown by in situ nitrogen implantation of metallic tantalum at room temperature over the energy range of 0.5-5keV. X-ray photoelectron spectroscopy (XPS) and Factor Analysis (FA) have been used to…
We meticulously study the individual effects of hydrogen irradiation and annealing on the electronic structure and magnetic properties of nanostructured MoS2 thin films grown through Chemical Vapor Deposition (CVD). The role of…
This study reports on the optical, structural, and dielectric properties of aluminum tantalum oxide (Al$_x$Ta$_y$O$_z$) thin films deposited at low temperature on silicon and steel substrates by pulsed direct current reactive magnetron…
We report a Raman scattering investigation of KTa1-xNbxO3 (x = 0.35, 0.5) thin films deposited on MgO and LaAlO3 as a function of temperature. The observed phase sequence in the range from 90 K to 720 K is similar to the structural phase…
Two single crystal phases of tantalum nitride were stabilized on c-plane sapphire using molecular beam epitaxy. The phases were identified to be $\delta$-TaN with a rocksalt cubic structure and $\gamma$-Ta$_2$N with a hexagonal structure.…
Laser annealing offers a promising route to back end of the line fabrication of ferroelectric thin film transistors based on hafnium-zirconium oxide (HZO). Due to the wide band gap of this material, previous reports have studied the…
The effect of vacuum annealing thin films of the compensated ferrimagnetic half-metal Mn2RuxGa at temperatures from 250 to 400 degree Celsius is investigated. The 39.3 nm films deposited on (100) MgO substrates exhibit perpendicular…
Here we report on studying the electronic and optical material properties of the technologically-relevant material indium tin oxide (ITO) as a function of thermal annealing. In this work, ITO powder has been prepared utilizing solid-state…