Related papers: Exploiting Data Longevity for Enhancing the Lifeti…

Solid-state batteries (SSBs) have recently been proposed as promising alternatives to conventional Li-ion batteries because of their high level of safety and power density. The engineering of SSBs requires comprehensive modeling of their…

The number and diversity of consumer devices are growing rapidly, alongside their target applications' memory consumption. Unfortunately, DRAM scalability is becoming a limiting factor to the available memory capacity in consumer devices.…

The growing volume of graph data may exhaust the main memory. It is crucial to design a disk-based graph storage system to ingest updates and analyze graphs efficiently. However, existing dynamic graph storage systems suffer from read or…

Prior studies have shown that the retention time of the non-volatile spin-transfer torque RAM (STT-RAM) can be relaxed in order to reduce STT-RAM's write energy and latency. However, since different applications may require different…

The emergence of Phase-Change Memory (PCM) provides opportunities for directly connecting persistent memory to main memory bus. While PCM achieves high read throughput and low standby power, the critical concerns are its poor write…

Spin-Transfer Torque Magnetic RAM (STT-MRAM) is known as the most promising replacement for SRAM technology in large Last-Level Caches (LLCs). Despite its high-density, non-volatility, near-zero leakage power, and immunity to radiation as…

Sequential information contains short- to long-range dependencies; however, learning long-timescale information has been a challenge for recurrent neural networks. Despite improvements in long short-term memory networks (LSTMs), the…

Spatiotemporal data mining (STDM) has a wide range of applications in various complex physical systems (CPS), i.e., transportation, manufacturing, healthcare, etc. Among all the proposed methods, the Convolutional Long Short-Term Memory…

Phase change memory (PCM) has recently emerged as a promising technology to meet the fast growing demand for large capacity memory in computer systems, replacing DRAM that is impeded by physical limitations. Multi-level cell (MLC) PCM…

Spatially coupled serially concatenated codes (SC-SCCs) are a class of spatially coupled turbo-like codes, which have a close-to-capacity performance and low error floor. In this paper we investigate the impact of coupling memory, block…

Semi-supervised continual learning (SSCL) seeks to leverage both labeled and unlabeled data in a sequential learning setup, aiming to reduce annotation costs while managing continual data arrival. SSCL introduces complex challenges,…

Content-Addressable Memory (CAM) is a powerful abstraction for building memory caches, routing tables and hazard detection logic. Without a native CAM structure available on FPGA devices, their functionality must be emulated using the…

I/O latency and throughput is one of the major performance bottlenecks for disk-based database systems. Upcoming persistent memory (PMem) technologies, like Intel's Optane DC Persistent Memory Modules, promise to bridge the gap between…

The speed of modern digital systems is severely limited by memory latency (the ``Memory Wall'' problem). Data exchange between Logic and Memory is also responsible for a large part of the system energy consumption. Logic--In--Memory (LiM)…

Flash memory is a non-volatile computer memory comprised of blocks of cells, wherein each cell is implemented as either NAND or NOR floating gate. NAND flash is currently the most widely used type of flash memory. In a NAND flash memory,…

The SRAM cell is made up of latch, which ensures that the cell data is preserved as long as power is turned on and refresh operation is not required for the SRAM cell. SRAM is widely used for on-chip cache memory in microprocessors, game…

In the near future the SCM is predicted to modify the form of new programs, the access form to storage, and the way that storage devices themselves are built. Therefore, a combination between the SCM and a designated Memory Allocation…

This work investigates a new erase scheme in NAND flash memory to improve the lifetime and performance of modern solid-state drives (SSDs). In NAND flash memory, an erase operation applies a high voltage (e.g., > 20 V) to flash cells for a…

SSDs are currently replacing magnetic disks in many application areas. A challenge of the underlying flash technology is that data cannot be updated in-place. A block consisting of many pages must be completely erased before a single page…

With the availability of hybrid DRAM-NVRAM memory on the memory bus of CPUs, a number of file systems on NVRAM have been designed and implemented. In this paper we present the design and implementation of a file system on NVRAM called…