Related papers: A Study on Performance and Power Efficiency of Den…

In this paper, we propose a 'full-stack' solution to designing high capacity and low latency on-chip cache hierarchies by starting at the circuit level of the hardware design stack. First, we propose a novel Gain Cell (GC) design using…

Due to increasing cache sizes and large leakage consumption of SRAM device, conventional SRAM caches contribute significantly to the processor power consumption. Recently researchers have used non-volatile memory devices to design caches,…

In-memory computing is a promising approach to addressing the processor-memory data transfer bottleneck in computing systems. We propose Spin-Transfer Torque Compute-in-Memory (STT-CiM), a design for in-memory computing with Spin-Transfer…

Several emerging non-volatile (NV) memory technologies are rising as interesting alternatives to build the Last-Level Cache (LLC). Their advantages, compared to SRAM memory, are higher density and lower static power, but write operations…

We propose a novel solid-state disk (SSD) architecture that utilizes a double-data-rate synchronous NAND flash interface for improving read and write performance. Unlike the conventional design, the data transfer rate in the proposed design…

This paper presents a low-power cache architecture based on the series interconnection of conventional 6-transistor static random-access memory (6T SRAM) cells. The proposed approach aims to reduce leakage power in SRAM-based cache memories…

Current day processors employ multi-level cache hierarchy with one or two levels of private caches and a shared last-level cache (LLC). An efficient cache replacement policy at LLC is essential for reducing the off-chip memory transfer as…

It is generally observed that the fraction of live lines in shared last-level caches (SLLC) is very small for chip multiprocessors (CMPs). This can be tackled using promotion-based replacement policies like re-reference interval prediction…

A new device structure for spin transfer torque based magnetic random access memory is proposed for on-chip memory applications. Our device structure exploits spin Hall effect to create a differential memory cell that exhibits fast and…

Flash memories intended for SSD and mobile applications need to provide high random I/O performance. This requires using efficient schemes for reading small chunks of data (e.g. 0.5KB - 4KB) from random addresses. Furthermore, in order to…

The rapid adoption of large language models (LLMs) is pushing AI accelerators toward increasingly powerful and specialized designs. Instead of further complicating software development with deeply hierarchical scratchpad memories (SPMs) and…

This paper proposes an intelligent cache management strategy based on CNN-LSTM to improve the performance and cache hit rate of storage systems. Through comparative experiments with traditional algorithms (such as LRU and LFU) and other…

Spin-Transfer Torque Magnetic RAM (STT-MRAM) as one of the most promising replacements for SRAMs in on-chip cache memories benefits from higher density and scalability, near-zero leakage power, and non-volatility, but its reliability is…

With technology scaling, the size of cache systems in chip-multiprocessors (CMPs) has been dramatically increased to efficiently store and manipulate a large amount of data in future applications and decrease the gap between cores and…

We propose overcoming the memory capacity limitation of GPUs with high-capacity Storage-Class Memory (SCM) and DRAM cache. By significantly increasing the memory capacity with SCM, the GPU can capture a larger fraction of the memory…

Deep Learning Recommendation Models (DLRMs) play a crucial role in delivering personalized content across web applications such as social networking and video streaming. However, with improvements in performance, the parameter size of DLRMs…

The rapid development of multi-core system and increase of data-intensive application in recent years call for larger main memory. Traditional DRAM memory can increase its capacity by reducing the feature size of storage cell. Now further…

Magneto-Electric FET (MEFET) is a recently developed post-CMOS FET, which offers intriguing characteristics for high speed and low-power design in both logic and memory applications. In this paper, for the first time, we propose a…

The increased memory demands of workloads is putting high pressure on Last Level Caches (LLCs). Unfortunately, there is limited opportunity to increase the capacity of LLCs due to the area and power requirements of the underlying SRAM…

DRAM-based memory is a critical factor that creates a bottleneck on the system performance since the processor speed largely outperforms the DRAM latency. In this thesis, we develop a low-cost mechanism, called ChargeCache, which enables…