Related papers: White light emission from silicon nanoparticles
The primary challenge in silicon photonics is achieving efficient luminescence in the communication band, crucial for its large-scale application. Despite significant efforts, silicon light sources still suffer from low efficiency and…
Silicon's inherently indirect bandgap severely limits its radiative efficiency, posing a fundamental challenge to the development of practical silicon-based light sources. While strategies such as nanoscale confinement of electrons and…
Silicon has been long known as a poor light emitter due to its indirect band gap and strong phonon-assisted decay of the excited states. Nevertheless, we have revealed efficient quasi-monochromatic photoluminescence at 368 nm from bulk…
Black silicon (b-Si) has been receiving a great deal of interest for its potential to be used in applications ranging from sensors to solar cells and electrodes in batteries due to its promising optical, electronic and structural…
Silicon is now firmly established as a high performance photonic material. Its only weakness is the lack of a native electrically driven light emitter that operates CW at room temperature, exhibits a narrow linewidth in the technologically…
Enhancement of radiative coupling efficiency between out-of-plane excitonic emitters in an indium selenide (InSe) film and an integrated waveguide formed by silicon (Si) Mie-resonant nanodisks is experimentally studied. Photoluminescence…
A negative kink in excess conductivity is observed in p-type non-degenerate (moderate dopant concentration) silicon wafers when excited by a very narrow pulse of 532 nm laser appearing just after the complete positive decay of dark…
Physical properties of black Silicon (b-Si) formed on Si wafers by reactive ion etching in chlorine plasma are reported in an attempt to clarify the formation mechanism and the origin of the observed optical and electrical phenomena which…
By coupling silicon nanowires (~150 nm diameter, 20 micron length) with an {\Omega}-shaped plasmonic nanocavity we are able to generate broadband visible luminescence, which is induced by high-order hybrid nanocavity-surface plasmon modes.…
Tin-containing nanocrystals, embedded in silicon, have been fabricated by growing an epitaxial layer of Si_{1-x-y}Sn_{x}C_{y}, where x = 1.6 % and y = 0.04 %, followed by annealing at various temperatures ranging from 650 to 900 degrees C.…
Silicon photonics has attracted significant interest in recent years due to its potential in integrated photonics components (1,2) as well as all-dielectric meta-optics elements.(3) Strong photon-photon interactions, aka optical…
The bottleneck in achieving fully integrated silicon photonics lies in silicon-based light-emitting devices that are compatible with standard CMOS technology. Dislocation loops by implanting boron into silicon and annealing represents an…
Silicon-compatible short- and mid-wave infrared emitters are highly sought-after for on-chip monolithic integration of electronic and photonic circuits to serve a myriad of applications in sensing and communication. To address this…
W centers are trigonal defects generated by self-ion implantation in silicon that exhibit photoluminescence at 1.218 $\mu$m. We have shown previously that they can be used in waveguide-integrated all-silicon light-emitting diodes (LEDs).…
The study proposes an ultra-thin back side illuminated (BSI) and top-illuminated, Ge on Si photodetector (PD), for 1 to 1.4 microns wavelength range. The Ge thickness of 350 nm allows us to achieve high-speed performance at >60 GHz, while…
Silicon has long been the foundational semiconductor material for a broad range of electronic devices, owing to its numerous advantages: wide natural availability, ease of synthesis in both crystalline and amorphous forms, and relatively…
Broadband active materials are pivotal for advancing emerging technologies spanning on-chip optical interconnects, artificial intelligence, quantum systems and precision metrology. Current semiconductor gain media face bandwidth…
A photodiode with 0.55$\pm$0.1 A/W responsivity at a wavelength of 1176.9 nm has been fabricated in a 45 nm microelectronics silicon-on-insulator foundry process. The resonant waveguide photodetector exploits carrier generation in…
Spherical silicon nanoparticles with sizes of a few hundreds of nanometers represent a unique optical system. According to theoretical predictions based on Mie theory they can exhibit strong magnetic resonances in the visible spectral…
We demonstrate cryogenic, electrically-injected, waveguide-coupled Si light-emitting diodes (LEDs) operating at 1.22 $\mu$m. The active region of the LED consists of W centers implanted in the intrinsic region of a $p$-$i$-$n$ diode. The…