Related papers: Room temperature spin-orbit torque switching induc…
Charge-to-spin and spin-to-charge conversion mechanisms in high spin-orbit materials are the new frontier of memory devices. They operate via spin-orbit torque (SOT) switching of a magnetic electrode, driven by an applied charge current. In…
We report on a temperature-induced transition from a conventional semiconductor to a two-dimensional topological insulator investigated by means of magnetotransport experiments on HgTe/CdTe quantum well structures. At low temperatures, we…
Current-induced control of magnetization in ferromagnets using spin-orbit torque (SOT) has drawn attention as a new mechanism for fast and energy efficient magnetic memory devices. Energy-efficient spintronic devices require a spin-current…
We theoretically investigate influences of electronic circuit delay, noise and temperature on write-error-rate (WER) in voltage-controlled magnetization switching operation of a magnetic-topological-insulator-based (MTI) device by means of…
Electrical manipulation of spin textures inside antiferromagnets represents a new opportunity for developing spintronics with superior speed and high device density. Injecting spin currents into antiferromagnets and realizing efficient…
We have studied ferromagnetic metal/topological insulator bilayer system to understand magnetization dynamics of ferromagnetic metal (FM) in contact with a topological insulator (TI). At magnetic resonance condition, the precessing…
Spin-orbit torque (SOT) can be used to efficiently manipulate the magnetic state of magnetic materials, which is an essential element for memory and logic applications. Due to symmetry constraints, only in-plane spins can be injected into…
The large spin orbit coupling in topological insulators results in helical spin-textured Dirac surface states that are attractive for topological spintronics. These states generate an efficient spin-orbit torque on proximal magnetic moments…
The emerging field of spinoptronics has a potential to supersede the functionality of modern electronics, while a proper description of strong light-matter coupling pose the most intriguing questions from both fundamental scientific and…
Spin-orbit torques (SOTs), which rely on spin current generation from charge current in a nonmagnetic material, promise an energy-efficient scheme for manipulating magnetization in magnetic devices. A critical topic for spintronic devices…
Spin-orbitronics, based on both spin and orbital angular momentum, presents a promising pathway for energy-efficient memory and logic devices. Recent studies have demonstrated the emergence of orbital currents in light transition metals…
While current-induced bistate spin-orbit torque (SOT) switching has been well established, deterministic electrical control of multiple magnetic states remains a central challenge in spintronics. Here, we realize a conceptually new…
We investigate spin transport in two dimensional ferromagnetic (FTI) and antiferromagnetic (AFTI) topological insulators. In presence of an in plane magnetization AFTI supports zero energy modes, which enables topologically protected edge…
Spin-orbit torque (SOT) in the heavy elements with a large spin-orbit coupling (SOC) has been frequently used to manipulate the magnetic states in spintronic devices. Recent theoretical works have predicted that the surface oxidized light…
For energy efficient and fast magnetic memories, switching of perpendicular magnetization by the spin-orbit torque (SOT) appears as a very promising solution, even more using magnetic insulators that suppress electrical shunting. This SOT…
We propose that ordinary semiconductors with large spin-orbit coupling (SOC), such as GaAs, can host stable, robust, and {\it tunable} topological states in the presence of quantum confinement and superimposed potentials with hexagonal…
The prospective of optically inducing a spin polarized current for spintronic devices has generated a vast interest in the out-of-equilibrium electronic and spin structure of topological insulators (TIs). In this Letter we prove that only…
Emerging wide varieties of the two-dimensional (2D) van der Waals (vdW) magnets with atomically thin and smooth interfaces holds great promise for next-generation spintronic devices. However, due to the lower Curie temperature of the vdW 2D…
Detection and manipulation of electrons' spins are key prerequisites for spin-based electronics or spintronics. This is usually achieved by contacting ferromagnets with metals or semiconductors, in which the relaxation of spins due to…
Spin-orbit torques (SOTs) have opened a new path to switch the magnetization in perpendicularly magnetized films and are of great interest due to their potential applications in novel data storage technology, such as the magnetic random…