Related papers: The Effect of Temperature on Cu-K-In-Se Thin Films
A set of thin film Mn$_x$Si$_{1-x}$ alloy samples with different manganese concentration x = 0.44 - 0.63 grown by the pulsed laser deposition (PLD) method onto the Al$_2$O$_3$(0001) substrate was investigated in the temperature range 4 -…
Lead island films were obtained via vacuum vapor deposition on glass and ceramic substrates at 80 K. Electrical conductance was measured during vapor condensation and further annealing of the film up to room temperature. The resistance…
We explore the molecular beam epitaxy synthesis of superconducting aluminum thin films grown on c-plane sapphire substrates at cryogenic temperatures of 6 K and compare their behavior with films synthesized at room temperature. We…
We have studied electronic and magnetic properties of the K0.8Fe1.6Se2 superconductor by x-ray absorption and emission spectroscopy. Detailed temperature dependent measurements alongwith a direct comparison with the binary FeSe system have…
Aluminum-Copper (Al-Cu) alloys are essential materials for weight reduction critical structures in the aerospace and automotive industries, yet achieving their maximum ultrahigh-strength potential remains limited by nanoscale defect control…
We report on the structural and superconducting properties of nanocrystalline tungsten thin films growth by sputtering at room temperature with an N2:Ar mixture (N2 from 3% to 50%). The crystalline phases were identified by comparing…
We study the effects of time-dependent substrate/film temperature in the deposition of a mesoscopically thick film using a statistical model that accounts for diffusion of adatoms without lateral neighbors whose coefficients depend on an…
The remarkably high superconducting transition temperature and upper critical field of iron(Fe)-based layered superconductors, despite ferromagnetic material base, open the prospect for superconducting electronics. However, success in…
Cu2ZnSnS4 (CZTS) is a promising thin-film solar-cell material consisted of earth abundant and nontoxic elements. Yet, there exists a fundamental bottle neck that hinders the performance of the device due to complexed intrinsic defects…
This paper reveals the origin of variation in the magnitude and temperature dependence of the normal state resistivity frequently observed in different YBCO single crystal or thin film samples with the same $T_{c}$. We investigated…
Highly oriented VO2 thin films were grown on sapphire substrates by the sol-gel method that includes a low pressure annealing in an oxygen atmosphere. This reduction process effectively promotes the formation of the VO2 phase over a…
This study investigates the influence of various growth parameters on normal-state resistivity and superconducting transition temperature Tc of granular aluminum films. Specifically, we focus on the effects of oxygen flow and aluminum…
Thin aluminum oxide films were deposited by a new and simple physicochemical method called chemical liquid phase deposition (CLD) on semiconductor materials. Aluminum sulfate with crystallized water and sodium bicarbonate were used as…
Low-temperature epitaxial growth of refractory transition-metal nitride thin films by means of physical vapor deposition has been a recurring theme in advanced thin-film technology for several years. In the present study, 150-nm-thick…
We studied the low temperature (T<130K) growth of Ag on Si(001) and Si(111) flat surfaces prepared by Si homo epitaxy with the aim to achieve thin metallic films. The band structure and morphology of the Ag overlayers have been investigated…
Nanocomposite thin films of Zinc Oxide and Silicon were grown by co-evaporating powdered ZnO and Si. This resulted in nanocrystallites of ZnO being embedded in Silicon. The mismatch in crystal structures of constituent materials result in…
Al-doped ZnO thin films were deposited using reactive high power impulse magnetron sputtering at substrate temperatures between room temperature and 600 $\bullet$ C. Two sample series with different oxygen partial pressures were studied.…
Segregation at surfaces of metal-covalent binary liquids is often non-classical and in extreme cases such as AuSi, the surface crystallizes above the melting point. In this study, we employ atomic-scale computational frameworks to study the…
The high cost of substrates for III-V growth can be cost limiting for technologies that require large semiconductor areas. Thus, being able to separate device layers and reuse the original substrate is highly desirable, but existing…
To prevent the loss of K in growing single crystals of Ba1-x Kx Fe2 As2 we developed a rapid heating Sn-flux method. Large single crystals with the optimal superconducting transition temperature TC about 38K were obtained and their…