Related papers: Direct Comparison of Fractional and Integer Quanti…
We report ultra-low temperature experiments on the obscure fractional quantum Hall effect (FQHE) at Landau level filling factor $\nu$=5/2 in a very high mobility specimen of $\mu=1.7 \times 10^7$ cm$^2$/Vs. We achieve an electron…
Fractional quantum Hall effect energy gaps have been measured in GaAs/GaAlAs heterojunctions as a function of Zeeman energy, which is varied by applying hydrostatic pressure up to 20 kbar. The gap at v=1/3 decreases with pressure until the…
We report the observation of an even-denominator fractional quantum Hall (FQH) state at $\nu=1/4$ in a high quality, wide GaAs quantum well. The sample has a quantum well width of 50 nm and an electron density of $n_e=2.55\times10^{11}$…
A nonlinear single-particle model is introduced, which captures the characteristic of systems in the quantum Hall regime. The model entails the magnetic Shr\"odinger equation with spatially variable magnetic flux density. The distribution…
Series connection of four quantum Hall effect (QHE) devices based on epitaxial graphene films was studied for realization of a quantum resistance standard with an up-scaled value. The tested devices showed quantum Hall plateaux RH,2 at…
In insulators, the longitudinal resistivity becomes infinitely large at zero temperature. For classic insulators, the Hall conductivity becomes zero at the same time. However, there are special systems, such as two-dimensional quantum Hall…
Confinement of small-gapped fractional quantum Hall states facilitates quasiparticle manipulation and is an important step towards quasiparticle interference measurements. Demonstrated here is conduction through top gate defined, narrow…
We observe fractional quantum Hall effect (FQHE) at the even-denominator Landau level filling factor $\nu=1/2$ in two-dimensional hole systems confined to GaAs quantum wells of width 30 to 50 nm and having bilayer-like charge distributions.…
We report magneto-transport measurements for the fractional quantum Hall state at filling factor $\nu=$ 5/2 as a function of applied parallel magnetic field ($B_{||}$). As $B_{||}$ is increased, the 5/2 state becomes increasingly…
The quantum anomalous Hall effect in magnetic topological insulators has been recognized as a promising platform for applications in quantum metrology. The primary reason for this is the electronic conductance quantization at zero external…
A theory of integer quantum Hall effect(QHE) in realistic systems based on von Neumann lattice is presented. We show that the momentum representation is quite useful and that the quantum Hall regime(QHR), which is defined by the propagator…
The quantum anomalous Hall effect holds promise as a disruptive innovation in condensed matter physics and metrology, as it gives access to Hall resistance quantization in terms of the von-Klitzing constant RK = h/e2 at zero external…
Measurements of fractional multiples of the {\nu}=2 plateau quantized Hall resistance (R_H {\approx} 12906 {\Omega}) were enabled by the utilization of multiple current terminals on millimetre-scale graphene p-n junction devices fabricated…
We propose an experiment to probe the unconventional quantum statistics of quasi-particles in fractional quantum Hall states by measurement of current noise. The geometry we consider is that of a Hall bar where two quantum point contacts…
We study the linear thermoelectric response of a quantum dot embedded in a constriction of a quantum Hall bar with fractional filling factors nu=1/m within Laughlin series. We calculate the figure of merit ZT for the maximum efficiency at a…
Accurate measurement of the electric current requires a stable and calculable resistor for an ideal current to voltage conversion. However, the temporal resistance drift of a physical resistor is unavoidable, unlike the quantum Hall…
Recent theories suggest that the excitations of certain quantum Hall states may have exotic braiding statistics which could be used to build topological quantum gates. This has prompted an experimental push to study such states using…
We propose a device, consisting of a Hall bar with two weak barriers, that can be used to study quantum interference effects in a strongly correlated system. We show how the device provides a way of measuring the fractional charge and…
We study the fractional quantum Hall effect in a bilayer with charge-distribution imbalance induced, for instance, by a bias gate voltage. The bilayer can either be intrinsic or it can be formed spontaneously in wide quantum wells, due to…
We report the observation of the quantized Hall effect in suspended graphene probed with a two-terminal lead geometry. The failure of earlier Hall-bar measurements is discussed and attributed to the placement of voltage probes in mesoscopic…