Related papers: Edge capacitance of a 2D topological insulator
We study the quantum capacitance in a topological insulator thin film system magnetized in the in-plane direction in the presence of an out-of-plane magnetic field and hexagonal warping. To first order, the modification in quantum…
The paired top and bottom Dirac surface states, each associated with a half-integer quantum Hall (QH) effect, and a resultant integer QH conductance ({\nu}e2/h), are hallmarks of a three-dimensional (3D) topological insulator (TI). In a…
We investigate a system consisting of one or two topological-insulator leads which are tunnel coupled to a single dot level. The leads are described by the one-dimensional Su-Schrieffer-Heeger model. We show that (topological) edge states…
Topological quantum matter is characterized by non-trivial global invariants of the bulk which induce gapless electronic states at its boundaries. A case in point are two-dimensional topological insulators (2D-TI) which host one-dimensional…
We consider a metasurface consisting of a square lattice of cylindrical antidots in a two-dimensional topological insulator (2DTI). Each antidot supports a degenerate Kramer's pair of eigenstates formed by the helical topological edge…
We have measured the differential resistance in a two-dimensional topological insulator (2DTI) in a HgTe quantum well, as a function of the applied dc current. The transport near the charge neutrality point is characterized by a pair of…
We measure the quantum capacitance and probe thus directly the electronic density of states of the high mobility, Dirac type of two-dimensional electron system, which forms on the surface of strained HgTe. Here we show that observed…
The physics of a junction composed of a normal metal, quantum dot and 2D topological insulator (in a quantum spin Hall state) is elucidated. It maifests a subtle combination of Kondo correlations and quantum spin Hall edge states moving on…
We revisit the problem of a single quantum impurity on the edge of a two-dimensional time-reversal invariant topological insulator and show that the zero temperature phase diagram contains a large local moment region for antiferromagnetic…
The topological magnetoelectric effect (TME) in three-dimensional topological insulators (TIs), described by $\Delta P = \frac{e^2}{2h} N_{\rm Ch}^{(2)} \Delta B$, serves as a condensed-matter realization of the four-dimensional quantum…
We study the energy spectra of bound states in quantum dots (QDs) formed by an electrostatic potential in two-dimensional topological insulator (TI) and their transformation with changes in QD depth and radius. It is found that, unlike a…
Topologically-protected edge states are dissipationless conducting surface states immune to impurity scattering and geometrical defects that occur in electronic systems characterized by a bulk insulating gap. One example can be found in a…
2D topological insulators promise novel approaches towards electronic, spintronic, and quantum device applications. This is owing to unique features of their electronic band structure, in which bulk-boundary correspondences enforces the…
Topological insulators exhibit gapless edge or surface states that are topologically protected by time-reversal symmetry. However, several promising candidates for topologically insulating materials (such as Bi$_2$Se$_3$ and HgTe) contain…
Asymmetric electrical conductance is theoretically demonstrated on the surface of a topological insulator (TI) in the limit of infinitesimally small forward and reverse biases between two spin selective electrodes. The discontinuous…
Room-temperature realization of macroscopic quantum phenomena is one of the major pursuits in fundamental physics. The quantum spin Hall state, a topological quantum phenomenon that features a two-dimensional insulating bulk and a helical…
We show that two-terminal transport can measure the Luttinger liquid (LL) parameter $K$, in helical LLs at the edges of two dimensional topological insulators (TIs) with Rashba spin-orbit coupling. We consider a Coulomb drag geometry with…
Topological insulators (TIs) are characterized by an insulating bulk and symmetry protected bound state on their boundaries. A "strong" topological insulator is characterized by robust conducting states on \emph{all} boundaries protected by…
The topological state that emerges at the surface of a topological insulator (TI) and at the TI-substrate interface are studied in metal-hBN-Bi2Se3 capacitors. By measuring the RF admittance of the capacitors versus gate voltage, we extract…
Spectroscopy of discrete Landau levels (LLs) in bulk-insulating three-dimensional topological insulators (3D TIs) in perpendicular magnetic field characterizes the Dirac nature of their surface states. Despite a number of studies…