Related papers: Interface induced spin-orbit interaction in silico…
Electron spins confined in quantum dots are an attractive system to realize high-fidelity qubits owing to their long coherence time. With the prolonged spin coherence time, however, the control fidelity can be limited by systematic errors…
We study theoretically the phonon-induced relaxation and decoherence of spin states of two electrons in a lateral double quantum dot in a SiGe/Si/SiGe heterostructure. We consider two types of singlet-triplet spin qubits and calculate their…
The magnetization of semiconductor quantum dots in the presence of spin-orbit coupling and interactions is investigated numerically. When the dot is occupied by two electrons we find that a level crossing between the two lowest many-body…
A slanting magnetic field is usually used to realize a slight hybridization between the spin and orbital degrees of freedom in a semiconductor quantum dot, such that the spin is manipulable by an external oscillating electric field. Here we…
We consider a gated one-dimensional (1D) quantum wire disturbed in a contactless manner by an alternating electric field produced by a tip of a scanning probe microscope. In this schematic 1D electrons are driven not by a pulling electric…
In this paper, a detailed analysis of anisotropic effects on the phonon induced spin relaxation rate in III-V semiconductor quantum dots (QDs) is carried out. We show that the accidental degeneracy due to level crossing between the first…
Many modern spin-based devices rely on the spin-orbit interaction, which is highly sensitive to the host semiconductor heterostructure and varies substantially depending on crystal direction, crystal asymmetry (Dresselhaus), and quantum…
Due to presence of magnetic field gradient needed for coherent spin control, dephasing of single-electron spin qubits in silicon quantum dots is often dominated by $1/f$ charge noise. We investigate theoretically fluctuations of ground…
We investigate the spin relaxation induced by acoustic phonons in the presence of spin-orbit interactions in single electron Si/SiGe lateral coupled quantum dots. The relaxation rates are computed numerically in single and double quantum…
We study the variation in the Land$\acute{\text{e}}$ g-factor of electron spins induced by both anisotropic gate potentials and magnetic fields in InAs quantum dots for possible implementation towards solid state quantum computing. In this…
Decoherence of a shallow donor electron spin in silicon caused by electron-lattice interaction is studied. We find that there are two time scales associated with the evolution of the electron spin density matrix: the fast but incomplete…
Matter qubits that maintain coherence over extended timescales are essential for many pursued applications in quantum communication and quantum computing. Significant progress has already been made on extending coherence times of spins in…
Silicon quantum dot spin qubits have become a promising platform for scalable quantum computing because of their small size and compatibility with industrial semiconductor manufacturing processes. Although Si/SiGe heterostructures are…
Controlling electron spins in double quantum dots allows individual electrons to be trapped and manipulated for next-generation solid-state qubit devices. In this paper, the study analyzes spin relaxation due to deformation potentials of…
Anisotropy of spin-orbit interaction (SOI) is studied for a single uncapped InAs self-assembled quantum dot (SAQD) holding just a few electrons. The SOI energy is evaluated from anti-crossing or SOI induced hybridization between the ground…
Quantum localization via atomic point defects in semiconductors is of significant fundamental and technological importance. Quantum defects in monolayer transition-metal dichalcogenide semiconductors have been proposed as stable and…
Electric fields are increasingly used for coherently manipulating spin states in semiconductor and molecular systems. Here we discuss the spin manipulation allowed by the modulation of the main parameters entering the Hamiltonians of…
Hole spin qubits in quasi one-dimensional structures are a promising platform for quantum information processing because of the strong spin-orbit interaction (SOI). We present analytical results and discuss device designs that optimize the…
Silicon hole quantum dots have been the subject of considerable attention thanks to their strong spin-orbit coupling enabling electrical control. The physics of silicon holes is qualitatively different from germanium holes and requires a…
Holes in Ge/SiGe heterostructures are now a leading platform for semiconductor spin qubits, thanks to the high confinement quality, two-dimensional arrays, high tunability, and larger gate structure dimensions. One limiting factor for the…