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Related papers: New Group V Elemental Bilayers: A Tunable Structur…

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Using first-principles calculations, we systematically investigate the electronic structures and band topologies of four kinds of group-V elemental (P, As, Sb and Bi) monolayers with buckled honeycomb structure. It is found that all these…

Mesoscale and Nanoscale Physics · Physics 2017-01-24 Jinghua Liang , Long Cheng , Jie Zhang , Huijun Liu

Inspired by the observation of mass less Dirac particles associated with low energy excitations of 2-dimensional (2D) honeycomb (HC) lattices of group IV atoms (C, Si, Ge, Sn) near the Dirac points (DPs) and spin-orbit interaction (SOI)…

Materials Science · Physics 2014-12-09 Dat T. Do , Subhendra D. Mahanti

The elemental two-dimensional (2D) materials such as graphene, silicene, germanene, and black phosphorus have attracted considerable attention due to their fascinating physical properties. Structurally they possess the honeycomb or…

Materials Science · Physics 2016-05-18 Ping Li , Weidong Luo

Using first-principles density functional theory calculations, we investigate a family of stable two-dimensional crystals with chemical formula $A_2B_2$, where $A$ and $B$ belong to groups IV and V, respectively ($A$ = C, Si, Ge, Sn, Pb;…

Materials Science · Physics 2018-08-01 B. Ozdamar , G. Ozbal , M. N. Cinar , K. Sevim , G. Kurt , B. Kaya , H. Sevincli

Group IV and V monolayers are very crucial 2D materials for their high carrier mobilities, tunable band gaps, and optical linear dichroism. Very recently, a novel group IV-V binary compound, Sn2Bi, has been synthesized on silicon substrate,…

In this letter, we predict the emergence of non-trivial band topology in the family of XX'Bi compounds having $P\overline{6}2m$ (\# 189) space group. Using first principles calculations within hybrid functional framework, we demonstrate…

Materials Science · Physics 2019-10-02 Chiranjit Mondal , C. K. Barman , Sourabh Kumar , Aftab Alam , Biswarup Pathak

Owing to the fascinating physical characteristics of two-dimensional (2D) materials and their heterostructure, much effort has been devoted to exploring their basic physical properties as well as discovering other novel 2D materials.…

Materials Science · Physics 2020-07-13 Seungjun Lee , Young-Kyun Kwon

The two-dimensional (2D) IV-V semiconductors have attracted much attention due to their fascinating electronic and optical properties. In this work, we predicted three phases of silicon nitrides, denoted $\alpha$-Si$_{2}$N$_{2}$,…

Materials Science · Physics 2024-04-02 Jiesen Li , Wanxing Lin , Junjun Shi , Feng Zhu , Haiwen Xie , Dao-Xin Yao

In the purpose of expanding the family of two-dimensional materials, we predict the existence of two-dimensional octa-structure of nitrogen group elements that are composed of squares and octagons in first-principle method based on density…

Materials Science · Physics 2015-12-08 Yu Zhang , Jason Lee , Wei-Liang Wang , Dao-Xin Yao

One-dimensional (1D) edge states formed at the boundaries of 2D normal and topological insulators have shown intriguing quantum phases such as charge density wave and quantum spin Hall effect. Based on first-principles density-functional…

Materials Science · Physics 2018-08-08 Sang-Min Jeong , Seho Yi , Hyun-Jung Kim , Gustav Bihlmayer , Jun-Hyung Cho

Nanotechnology's impact on semiconductor industry advancement, particularly through the engineering of nanostructures like nanowires, opens new possibilities for material functionality due to the tunable physical properties of…

Materials Science · Physics 2024-04-09 Jakub Ziembicki , Paweł Scharoch , Maciej P. Polak , Michał Wiśniewski , Robert Kudrawiec

Tuning the electronic structures of two-dimensional (2D) material-based heterostructures is of crucial importance for their use in functional next-generation electronics. Here, through angle-resolved photoemission spectroscopy with…

The semimetallic Group V elements display a wealth of correlated electron phenomena due to a small indirect band overlap that leads to relatively small, but equal, numbers of holes and electrons at the Fermi energy with high mobility. Their…

In this article, we present our results on bilayers assembled upon strategic placement of Cd$_6$Se$_6$ clusters. These bilayers are studied for their stability and electronic structure with the help of density functional theory and are…

Materials Science · Physics 2020-01-08 Deepashri Saraf , Anjali Kshirsagar

Insulating-metallic transition mediated by substitutional atoms is predicted in a series of two-dimensional carbon-based structures. Introducing Si atoms in selected sites of tetrahexcarbon [Carbon 137 (2018) 266] according to rational…

Materials Science · Physics 2022-02-16 Alejandro Lopez-Bezanilla , Peter B. Littlewood

We report on fabrication of a two-dimensional topological insulator-Bi(111) bilayer on Sb nanofilms via a sequential molecular beam epitaxy (MBE) growth technique. Our angle-resolved photoemission measurements demonstrate the evolution of…

Mesoscale and Nanoscale Physics · Physics 2017-10-04 Guang Bian , Z. F. Wang , Xiaoxiong Wang , Caizhi Xu , Su-Yang Xu , T. Miller , M. Zahid Hasan , Feng Liu , T. -C. Chiang

The combination with superconductivity and topological nontrivial band structure provides a promising route towards novel quantum states such as topological superconductivity. Here, we report the first observation of superconductivity (4.1…

Van der Waals heterostructures formed by stacking different types of 2D materials are attracting increasing attention due to new emergent physical properties such as interlayer excitons. Recently synthesized atomically thin indium selenide…

Mesoscale and Nanoscale Physics · Physics 2021-12-15 Dangqi Fang , Siyu Chen , Yaqi Li , Bartomeu Monserrat

Group-V elemental monolayers including phosphorene are emerging as promising 2D materials with semiconducting electronic properties. Here, we present the results of first principles calculations on stability, mechanical and electronic…

Computational Physics · Physics 2015-05-12 Gaoxue Wang , Ravindra Pandey , Shashi P. Karna

We apply an Ising-type model to estimate the band gaps of the polytypes of group IV elements (C, Si, and Ge) and binary compounds of groups: IV-IV (SiC, GeC, and GeSi), and III-V (nitride, phosphide, and arsenide of B, Al, and Ga). The…

Chemical Physics · Physics 2023-10-03 Raghunathan Ramakrishnan , Shruti Jain
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