Related papers: Valley dependent anisotropic spin splitting in sil…
Spin shuttling has crystalized as a powerful and promising tool for establishing intermediate-range connectivity in semiconductor spin-qubit devices. Although experimental demonstrations have performed exceptionally well on different…
Electron and nuclear spins of donor ensembles in isotopically pure silicon experience a vacuum-like environment, giving them extraordinary coherence. However, in contrast to a real vacuum, electrons in silicon occupy quantum superpositions…
Semiconductor architectures hold promise for quantum information processing (QIP) applications due to their large industrial base and perceived scalability potential. Electron spins in silicon in particular may be an excellent architecture…
Proposed silicon-based quantum-computer architectures have attracted attention because of their promise for scalability and their potential for synergetically utilizing the available resources associated with the existing Si technology…
Although electron spins in III-V semiconductor quantum dots have shown great promise as qubits, a major challenge is the unavoidable hyperfine decoherence in these materials. In group IV semiconductors, the dominant nuclear species are…
Tunneling is a fundamental quantum process with no classical equivalent, which can compete with Coulomb interactions to give rise to complex phenomena. Phosphorus dopants in silicon can be placed with atomic precision to address the…
Spin qubits composed of either one or three electrons are realized in a quantum dot formed at a Si/SiO_2-interface in isotopically enriched silicon. Using pulsed electron spin resonance, we perform coherent control of both types of qubits,…
Electron states are studied for quantum dots in a strained Si quantum well, taking into account both valley and orbital physics. Realistic geometries are considered, including circular and elliptical dot shapes, parallel and perpendicular…
The presence of degenerate conduction band valleys and how they are mixed by interfaces play critical roles in determining electron interaction and spectrum in a silicon nanostructure. Here we investigate how the valley phases affect the…
Silicon quantum chips offer a promising path toward scalable, fault-tolerant quantum computing, with the potential to host millions of qubits. However, scaling up dense quantum-dot arrays and enabling qubit interconnections through…
We report the demonstration of a low-disorder silicon metal-oxide-semiconductor (Si MOS) quantum dot containing a tunable number of electrons from zero to N=27. The observed evolution of addition energies with parallel magnetic field…
Spins in SiGe quantum dots are promising candidates for quantum bits but are also challenging due to the valley degeneracy which could potentially cause spin decoherence and weak spin-orbital coupling. In this work we demonstrate that…
Spin-orbit coupling is relatively weak for electrons in bulk silicon, but enhanced interactions are reported in nanostructures such as the quantum dots used for spin qubits. These interactions have been attributed to various dissimilar…
The authors investigate the magnetic field dependence of the energy splitting between low-lying valley states for electrons in a Si/SiGe quantum well tilted with respect to the crystallographic axis. The presence of atomic steps at the…
The presence of non-degenerate valley states in silicon can drastically affect electron dynamics in silicon-based heterostructures, leading to electron spin relaxation and spin-valley coupling. In the context of solid-state spin qubits, it…
Electronic states in silicon quantum dots are examined theoretically, taking into account a multivalley structure of the conduction band. We find that (i) exchange interaction hardly works between electrons in different valleys. In…
The spin states of electrons confined in semiconductor quantum dots form a promising platform for quantum computation. Recent studies of silicon CMOS qubits have shown coherent manipulation of electron spin states with extremely high…
Anisotropy of spin-orbit interaction (SOI) is studied for a single uncapped InAs self-assembled quantum dot (SAQD) holding just a few electrons. The SOI energy is evaluated from anti-crossing or SOI induced hybridization between the ground…
Coherent coupling between distant qubits is needed for any scalable quantum computing scheme. In quantum dot systems, one proposal for long-distance coupling is to coherently transfer electron spins across a chip in a moving potential.…
We study a vertical double quantum dot (DQD) in a Si/Si$_{1-x}$Ge$_x$/Si double-well heterostructure for full electrical control of electron Loss-DiVincenzo (LD) spin qubits, using realistic device modeling and numerical simulations. Due to…