Related papers: Spin-accumulation capacitance and its application …
The exchange interaction between the conduction electrons and magnetic moments at magnetic interface leads to mutual conversion between electron spin current and magnon current. We introduce a concept of spin convertance which…
We argue that a pseudo-one-dimensional electron gas is magnetized when a voltage bias is applied with the Fermi level tuned to be in the energy gap generated by a spin-orbit interaction. The magnetization is an indication of spin-carrying…
We consider a two dimensional semiconductor with carriers subject to spin-orbit interactions and scattered by randomly distributed magnetic impurities. We solve the time-dependent Schroedinger equation to investigate the relationship…
We describe a new means for electrically creating spin polarization in semiconductors. In contrast to spin injection of electrons by tunneling through a reverse-biased Schottky barrier, we observe spin accumulation at the…
A new type of a capacitor with a very high volumetric capacitance is proposed. It is based upon the known phenomenon of a sharp increase of the dielectric constant of the metal-insulator composite in the vicinity of the percolation…
The electrostatic coupling between singled-walled carbon nanotube (SWNT) networks/arrays and planar gate electrodes in thin-film transistors (TFTs) is analyzed both in the quantum limit with an analytical model and in the classical limit…
In Si, spin-phonon interaction is the primary spin relaxation mechanism. At low temperatures, the absence of spin-phonon relaxation will lead to enhanced spin accumulation. Spin accumulation may change the electro-thermal transport within…
The controlled generation of localized spin densities is a key enabler of semiconductor spintronics In this work, we study spin Hall effect induced edge spin accumulation in a two-dimensional hole gas with strong spin orbit interactions. We…
Magnetization reversal is a well-studied problem with obvious applicability in computer hard-drives. One can accomplish a magnetization reversal in at least one of two ways: application of a magnetic field, or through a spin current. The…
We study the spin-charge separation in a Kondo-like model for an impurity with a spin and a charge (isospin) degree of freedom coupled to a single conduction channel (the ``spin-charge'' Kondo model). We show that the spin and charge Kondo…
To improve the understanding of the relation between electrode curvature and energy storage mechanisms, a systematic investigation of the correlation between convex and concave electrode surfaces and the differential capacitance of an…
We describe a broadly-applicable theory of spin relaxation in materials with incoherent charge transport; examples include amorphous inorganic semiconductors, organic semiconductors, quantum dot arrays, and systems displaying…
The processes of spin diffusion and relaxation are studied theoretically and numerically for quantum computation applications. Two possible realizations of a spin quantum computer (SQC) are analyzed: (i) a boundary spin chain in a 2D spin…
Using the superfield nonequilibrium Greens function technique, we derive the spatio-temporal spin magnetization quantum transport equations (SMQTEs) for a two-band model of semiconductors. The relevant variables are the real (Pauli-Dirac)…
An extension of Drude model is proposed that accounts for spin and spin-orbit interaction of charge carriers. Spin currents appear due to combined action of the external electric field, crystal field and scattering of charge carriers. The…
The capacitance of the electric double layer has potential applications in supercapacitors, and theoretical investigations of the double-layer capacitance in binary mixtures are important. In this work, we develop the theory of the electric…
We study the effect of magnetic scattering on transport in a system with strong structural disorder, using exact finite size calculation of the low frequency optical conductivity. At weak electron-spin coupling spin disorder leads to a…
The energy density method is generalized to include spin polarization with the full formalism derived based on spin-density functional theory, which aims at decomposing the total energy into well-defined atomic energies. The method involves…
Low-symmetry two-dimensional (2D) topological materials such as MoTe$_2$ host efficient charge-to-spin conversion (CSC) mechanisms that can be harnessed for novel electronic and spintronic devices. However, the nature of the various CSC…
The realization of spin-based logical gates crucially depends on magnetically-coupled spin qubits. Thus, understanding decoherence when spin qubits are in close proximity will become a roadblock to overcome. Herein, we provide a general…