Related papers: Spin relaxation in corrugated graphene
Relaxation, <Sz(t)>, of the average spin of a carrier in course of hops over sites hosting random hyperfine fields is studied theoretically. In low dimensions, d = 1, 2, the decay of average spin with time is non-exponential at all times.…
Injection, transmission, and detection of spins in a conducting channel are the basic ingredients of spintronic devices. Long spin lifetimes during transit are an important ingredient in realizing this technology. An attractive platform for…
We find an exact solution for the problem of electron spin relaxation in a 2D circle with Rashba spin-orbit interaction. Our analysis shows that the spin relaxation in finite-size regions involves three stages and is described by multiple…
The effects of surface chemical doping on spin transport in graphene are investigated by performing non-local measurements in ultrahigh vacuum while depositing gold adsorbates. We demonstrate manipulation of the gate-dependent non-local…
Spin transport properties of graphene non-local spin valve devices are typically determined from Hanle spin precession measurements by using a simplified solution of the one-dimensional Bloch-Torrey equation which assumes infinitely long…
We investigate the organized formation of strain, ripples and suspended features in macroscopic CVD-prepared graphene sheets transferred onto a corrugated substrate made of an ordered arrays of silica pillars of variable geometries.…
Electronic states in 2D materials can exhibit pseudospin degrees of freedom, which allow for unique carrier-field interaction scenarios. Here, we investigate ultrafast sublattice pseudospin relaxation in graphene by means of…
We investigate the spin diffusion and transport in a graphene monolayer on SiO$_2$ substrate by means of the microscopic kinetic spin Bloch equation approach. The substrate causes a strong Rashba spin-orbit coupling field $\sim 0.15$ meV,…
We describe a broadly-applicable theory of spin relaxation in materials with incoherent charge transport; examples include amorphous inorganic semiconductors, organic semiconductors, quantum dot arrays, and systems displaying…
Spin relaxation was studied in a two-dimensional electron gas confined in a wide GaAs quantum well. Recently, the control of the spin relaxation anisotropy by diffusive motion was first shown in D. Iizasa et al., arXiv:2006.08253 (2020).…
Spin accumulation and spin precession in single-layer graphene are studied by non-local spin valve measurements at room temperature. The dependence of the non-local magnetoresistance on electrode spacing is investigated and the results…
Optical pump-probe measurements of spin-dynamics at temperatures down to 1.5K are described for a series of (001)-oriented GaAs/AlGaAs quantum well samples containing high mobility two-dimensional electron gases (2DEGs). For well widths…
Large spin-orbital proximity effects have been predicted in graphene interfaced with a transition metal dichalcogenide layer. Whereas clear evidence for an enhanced spin-orbit coupling has been found at large carrier densities, the type of…
Proximity effects are one of the pillars of exotic phenomena and technological applications of two dimensional materials. However, the interactions nature depends strongly on the materials involved, their crystalline symmetries, and…
W. Apel and Yu.A. Bychkov have recently considered the spin relaxation in a 2D quantum Hall system for the filling factor close to unity [PRL v.82, 3324 (1999)]. The authors considered only one spin flip mechanism (direct spin-phonon…
A method is presented to calculate the spin relaxation times T1, T2 due to a non-uniform magnetic field, and the linear-in-electric-field precession frequency shift {\delta}{\omega}E when an electric field is present, in the diffusion…
The classical drift diffusion (DD) model of spin transport treats spin relaxation via an empirical parameter known as the ``spin diffusion length''. According to this model, the ensemble averaged spin of electrons drifting and diffusing in…
A unique spin depolarization mechanism, induced by the presence of g-factor anisotropy and intervalley scattering, is revealed by spin transport measurements on long-distance germanium devices in a longitudinal magnetic field. The…
We study spin relaxation and diffusion in an electron-spin ensemble of nitrogen impurities in diamond at low temperature (0.25-1.2 K) and polarizing magnetic field (80-300 mT). Measurements exploit mode- and temperature-dependent coupling…
Spin-phonon relaxation due to two-phonon processes of a spin cluster embedded in an elastic medium has been studied. For the case of uniaxial anisotropy, relaxation rates due to Raman processes and processes involving the emission of two…