Related papers: Wurtzite spin lasers
The wave nature of electrons in semiconductor nanostructures results in spatial interference effects similar to those exhibited by coherent light. The presence of spin-orbit coupling renders interference in spin space and in real space…
Under oblique incidence of circularly polarized infrared radiation the spin-galvanic effect has been unambiguously observed in (001)-grown $n$-type GaAs quantum well (QW) structures in the absence of any external magnetic field. Resonant…
The problem of spin-dependent transport of electrons through a finite array of quantum dots attached to 1D quantum wire (spin gun) for various semiconductor materials is studied. The Breit-Fermi term for spin-spin interaction in the…
We present a complete description of spin injection and detection in Fe/Al_xGa_{1-x}As/GaAs heterostructures for temperatures from 2 to 295 K. Measurements of the steady-state spin polarization in the semiconductor indicate three…
Lasers with injected spin-polarized carriers show an outstanding performance in both static and dynamic operation. In addition to the intensity response of conventional lasers, without spin-polarized carriers, both intensity and…
Understanding and manipulating spin polarization and transport in the vicinity of semiconductor-hosted defects is a problem of present technological and fundamental importance. Here, we use high-field magnetic resonance to monitor the…
The polarization of conduction electron spins due to an electrical current is observed in strained nonmagnetic semiconductors using static and time-resolved Faraday rotation. The density, lifetime, and orientation rate of the…
We put forward a mechanism for current induced spin polarization for a hole in a quantum dot side-coupled to a quantum wire, that is based on the spin-orbit splitting of the valence band. We predict that in a stark contrast with the…
We propose a filter method to generate electron beams of high polarization from bubble and blow-out wakefield accelerators. The mechanism is based on the idea to identify all electron-beam subsets with low-polarization and to filter them…
Torsional oscillations of a free-standing semiconductor beam are shown to cause spin-dependent oscillating potentials that spin-polarize an applied charge current in the presence of intentional or disorder scattering potentials. We propose…
Studies of spin manipulation in semiconductors has benefited from the possibility to grow these materials in high quality on top of optically active III-V systems. The induced electroluminescence in these layered semiconductor…
Spin lasers leverage electron spin-polarisation to control photon polarisation, offering the potential for lower thresholds, rapid modulation, and all-optical data processing. We report successful spin injection into a commercial Vertical…
Methods to generate spin-polarised electronic states in non-magnetic solids are strongly desired to enable all-electrical manipulation of electron spins for new quantum devices. This is generally accepted to require breaking global…
A theoretical and experimental study of the spin-dependent photoconductivity in dilute Nitride GaAsN is presented. The non linear transport model we develop here is based on the rate equations for electrons, holes, deep paramagnetic and non…
An impressive success of spintronic applications has been typically realized in metal-based structures which utilize magnetoresistive effects for substantial improvements in the performance of computer hard drives and magnetic random access…
Exciton-polaritons are mixed light-matter particles offering a versatile solid state platform to study many-body physical effects. In this work we demonstrate an electrically controlled polariton laser, in a compact, easy-to-fabricate and…
Spatially nonhomogeneously spin polarized nuclei are proposed as a new mechanism to monitor electron states in a nanostructure, or as a means to createn and, if necessary, reshape such nanostructures in the course of the experiment. We…
A new magnetic logic overcomes the major limitations of field programmable gate arrays while having a 50% smaller unit cell than conventional designs utilizing magnetic tunnel junctions with one Heusler alloy electrode. These show positive…
Spins of charge carriers, paramagnetic centers, and nuclei in semiconductor structures are known to be oriented if circular-polarized light is shined upon the structure. This is due to transfer of angular momentum from photons to various…
Millikelvin magnetotransport studies are carried out on heavily $n$-doped wurtzite GaN:Si films grown on semi-insulating GaN:Mn buffer layers by metal-organic vapor phase epitaxy. The dependency of the conductivity on magnetic field and…