Related papers: Semirelativity in Semiconductors: a Review
We investigated the effect due to perpendicular magnetic field on quantum wires where spin-orbit interaction (SOI) of electrons is not neglected. Based on the calculated energy dispersion, the nonlinear ballistic conductance ($G$) and…
One-electron 3+1 and 2+1 Dirac equations are used to calculate the motion of a relativistic electron in a vacuum in the presence of an external magnetic field. First, calculations are carried on an operator level and exact analytical…
The nanofabrication technology has taught us that an $m$-dimensional confining potential imposed upon an $n$-dimensional electron gas paves the way to a quasi-($n-m$)-dimensional electron gas, with $m \le n$ and $1\le n, m \le 3$. This is…
Using reflective cross-polarized 2D THz time-domain spectroscopy in the range of 1-12 THz, we follow the trajectory of the out-of-equilibrium electron population in the low-bandgap semiconductor InSb. The 2D THz spectra show a set of…
Dirac line node (DLN) materials are topological semimetals wherein a set of symmetry protected crossing points forms a one-dimensional (1D) line in reciprocal space. Not only are the linearly dispersing bands expected to give rise to…
We review recent transport experiments that reveal two-threshold voltage-current characteristics, marked by a significant increase in noise between the two threshold voltages, at low electron densities in the insulating regime in…
We investigate the quasi-particle and transport properties of a model describing interacting Dirac and Weyl semimetals in the presence of local Hubbard repulsion $U$, where we explicitly include a deviation from the linearity of the…
Zero resistance, diamagnetism (Meissner effect) and the energy gap in the excitation spectrum are the fundamental attributes of superconductivity. In nanoparticles with characteristic size 10 nm superconductivity is suppressed by the…
In the framework of the first Born approximation, we present a semirelativistic theoretical study of the inelastic excitation ($1s_{1/2}\longrightarrow 2s_{1/2}$) of hydrogen atom by electronic impact. The incident and scattered electrons…
This study provides accurate results for the electronic stopping cross-sections of H, He, N, and Ne in silicon in low to intermediate energy ranges using various non-perturbative theoretical methods, including real-time time-dependent…
Two relativistic approaches are considered to evaluate the quasielastic double-differential and integrated neutrino-nucleus cross sections. One, based on the relativistic impulse approximation, relies on the microscopic description of…
Atomically precise graphene nanoribbons (GNRs) have emerged as promising candidates for nanoelectronic applications due to their widely tunable energy band gaps resulting from lateral quantum confinement and edge effects. Here we report on…
We consider the nuclear spin-lattice relaxation rate, $1/T_1T$ in superconductors with accidental nodes. We show that a Hebel-Slichter-like peak occurs even in the absence of an isotropic component of the superconducting gap. The…
The experimental data from quasielastic electron scattering from $^{12}$C are reanalyzed in terms of a new scaling variable suggested by the interacting relativistic Fermi gas with scalar and vector interactions, which is known to generate…
3D Dirac semimetals are an emerging class of materials that possess topological electronic states with a Dirac dispersion in their bulk. In nodal-line Dirac semimetals, the conductance and valence bands connect along a closed path in…
We use Boltzmann theory to study the semi-classical dynamics of electrons in a two-dimensional (2D) tilted Dirac material in which the tilt varies in space. The spatial variation of the tilt parameter induces a non-trivial spacetime…
Strong-field quantum electronics is emerging as a potential candidate in information processing but still coherence vs decoherence is a primary concern of the concept. Strong-field coherent processes in band gap materials have led during…
The electronic band structure of complex nanostructured semiconductors has a considerable effect on the final electronic and optical properties of the material and, ultimately, on the functionality of the devices incorporating them. Valence…
We consider Kohn-Luttinger mechanism for superconductivity in a two-dimensional electron gas confined to a narrow well between two metallic planes with two occupied subbands with Fermi momenta $k_{FL} > k_{FS}$. On the basis of a…
The effective mass, m*, of the electrons confined in high-mobility SiGe/Si/SiGe quantum wells has been measured by the analysis of the temperature dependence of the Shubnikov-de Haas oscillations. In the accessible range of electron…