Related papers: Chern insulators without band inversion in MoS2 mo…
A topological state with simultaneous nonzero Chern number and spin Chern number is possible for electrons on honeycomb lattice based on band engineering by staggered electric potential and antiferromagnetic exchange field in presence of…
Magnetism typically arises from the joint effect of Fermi statistics and repulsive Coulomb interactions, which favors ground states with non-zero electron spin. As a result, controlling spin magnetism with electric fields---a longstanding…
We report the electronic band structures and concomitant Fermi surfaces for a family of exfoliable tetradymite compounds with the formula $T_2$$Ch_2$$Pn$, obtained as a modification to the well-known topological insulator binaries…
We predict the van der Waals monolayer ReAg$_2$Cl$_6$ hosts isolated flat Chern bands at the Fermi level in its $120^\circ$ antiferromagnetic ground state. Their flatness and nontrivial topology arise from the cooperative effect of coplanar…
Recently discovered magnetic topological insulators $T$Bi$_{2}$Te$_{4}$ ($T=$Mn, Fe) crystallize into the $R\bar{3}m$ rhombohedral structure and exhibit the antiferromagnetic order. Here, we discuss the lattice dynamics of these compounds…
Inspired by recent discovery of correlated insulating states in twisted bilayer graphene (TBG), we study a two-orbital Hubbard model on the honeycomb lattice with two electrons per unit cell. Based on the real-space density matrix…
$\alpha$-Sn is an elemental topological material, whose topological phases can be tuned by strain and magnetic field. Such tunability offers a substantial potential for topological electronics. However, InSb substrates, commonly used to…
We investigate the properties of a two-dimensional quasicrystal in the presence of a uniform magnetic field. In this configuration, the density of states (DOS) displays a Hofstadter butterfly-like structure when it is represented as a…
Multilayer (TiO$_2$)$_m$/(VO$_2$)$_n$ nanostructures ($d^1$ - $d^0$ interfaces with no polar discontinuity) show a metal-insulator transition with respect to the VO$_2$ layer thickness in first principles calculations. For $n$ $\geq$ 5…
We present evidence of topological surface states in beta-Ag2Te through first-principles calculations and periodic quantum interference effect in single crystalline nanoribbon. Our first-principles calculations show that beta-Ag2Te is a…
We have fabricated an encapsulated monolayer MoS$_{\mathrm{2}}$ device with metallic ohmic contacts through a pre-patterned hBN layer. In the bulk, we observe an electron mobility as high as 3000 cm$^{\mathrm{2}}$/Vs at a density of 7…
The intertwined ferroelectricity and band topology will enable the non-volatile control of the topological states, which is of importance for nanoelectrics with low energy costing and high response speed. Nonetheless, the principle to…
Topological flat bands play an essential role in inducing exotic interacting physics, ranging from fractional Chern insulators to superconductivity, in moir\'e materials. In this work, we propose a design principle for realizing topological…
Exploring intrinsic magnetic topological insulators (TIs) for next-generation spintronic devices is still challenging in recent years. Here, we present a theoretical investigation on the electronic, magnetic and topological properties of…
Twisted bilayer MoTe$_2$ (tMoTe$_2$) has emerged as a robust platform for exploring correlated topological phases, notably supporting fractional Chern insulator (FCI) states at zero magnetic field across a wide range of twist angles. The…
Multi-terminal topological devices are a new generation of electronic devices with quantized properties robust against imperfections. In magnetic topological insulators, dissipationless edge states give functional devices in zero magnetic…
The interface properties between gold (Au) contacts and molybdenum disulfide (MoS2) are critical for optimizing the performance of semiconductor devices. This study investigates the impact of metal dopants (D) on the transport properties of…
While the recent advances in topology have led to a classification scheme for electronic bands described by the standard theory of metals, a similar scheme has not emerged for strongly correlated systems such as Mott insulators in which a…
P-n junctions based on vertically stacked single or few layer transition metal dichalcogenides (TMDCs) have attracted substantial scientific interest. Due to the propensity of TMDCs to show exclusively one type of conductivity, n- or…
The moir\'e superlattice formed by ABC stacked trilayer graphene aligned with a hexagonal boron nitride substrate (TG/h-BN) provides an interesting system where both the bandwidth and the topology can be tuned by an applied perpendicular…