Related papers: Separate magnetization switching of hexagonal Co/B…
The puzzle of 3D magnetic interactions in the structurally 2D layered oxide Na$_{x}$CoO$_2$ is addressed using first principles calculations and analysis of the exchange mechanisms. The calculations agree with recent neutron results,…
Josephson junctions with s-wave superconductors (S) and multiple ferromagnetic (F) layers carry spin-triplet supercurrents in the presence of magnetically inhomogeneous spin-mixer interfaces. Here, we report magnetic Josephson junctions…
We report time-resolved measurements of magnetization switching by spin-orbit torques in the absence of an external magnetic field in perpendicularly magnetized magnetic tunnel junctions (MTJ). Field-free switching is enabled by the dipolar…
We report on the magnetic switching and backhopping effects due to spin-transfer-torque in magnetic tunnel junctions. Experimental data on the current-induced switching in junctions with MgO tunnel barrier reveal a random back-and-forth…
Perpendicular magnetic tunnel junctions (p-MTJs) switched utilizing bipolar electric fields have extensive applications in energy-efficient memory and logic devices. Voltage-controlled magnetic anisotropy linearly lowers the energy barrier…
We report on spin polarization reduction by incoherent tunneling in realistic single crystal Co2FeAl/MgO/Co50Fe50 magnetic tunnel junctions (MTJ) compared to reference Fe/MgO/Fe. A large density of misfit dislocations in the Heusler based…
Magnetic tunnel junctions with a ferrimagnetic barrier layer have been studied to understand the role of the barrier layer in the tunneling process - a factor that has been largely overlooked until recently. Epitaxial oxide junctions of…
In this work, we comprehensively investigate and discuss the structural, magnetostatic, dynamic, and magnetoresistive properties of epitaxial Co/Mo superlattices. The magnetization of the Co sublayers is coupled antiferromagnetically with a…
Pairing of $\pi$ electronic state structures with functional or metallic atoms makes them possible to engineer physical and chemical properties. Herein, we predict the reorientation of magnetization of Co on hexagonal BN (h-BN) and graphene…
Monolayer (ML) transition-metal dichalcogenides exist in different phases, such as the hexagonal (2H) and distorted octahedral or monoclinic (1T') phases. The different structures show vastly different properties. For example, the 2H MoTe2…
Anisotropic magnetic properties of a layered kagome-like system Cu3Bi(SeO3)2O2Br have been studied by bulk magnetization and magnetic susceptibility measurements as well as powder and single-crystal neutron diffraction. At T_N = 27.4 K the…
Over the last decade it has been shown that magnetic non-collinearity at a s-wave superconductor/ferromagnet interface is a key ingredient for spin-singlet to spin-triplet pair conversion. This has been verified in several synthetic…
We characterize molecular magnet heterojunctions in which sublimated CoPc films as thin as 5 nm are sandwiched between transparent conducting bottom-layer indium tin oxide and top-layer soft-landing eutectic GaIn (EGaIn) electrodes. The…
We study spin-transfer-torque driven magnetization dynamics of a perpendicular magnetic tunnel junction (MTJ) nanopillar. Based on the combination of spin-torque ferromagnetic resonance and microwave spectroscopy techniques, we demonstrate…
The structural properties of (111)-oriented {CdO/MgO} superlattice structures grown on c-sapphire and cubic MgO substrates have been studied by high resolution X-ray diffraction. The growth was performed in a plasma-assisted molecular beam…
Electrical current-induced deterministic magnetization switching in a magnetic multilayer structure without external magnetic field is realized by utilizing interlayer exchange coupling. Two ferromagnetic Co layers, with in-plane and…
We consider a new type of magnetic tunnel junction, which consists of two ferromagnetic tunnel barriers acting as spin filters (SFs), separated by a nonmagnetic metal (NM) layer. Using the transfer matrix method and the free-electron…
Hexagonal boron nitride (hBN) is a prototypical high-quality two-dimensional insulator and an ideal material to study tunneling phenomena, as it can be easily integrated in vertical van der Waals devices. For spintronic devices, its…
Perpendicularly magnetized CoFeB layers with ultra-thin non-magnetic insertion layers are very widely used as the electrodes in magnetic tunnel junctions for spin transfer magnetic random access memory devices. Exchange interactions play a…
Superconducting hybrid junctions are revealing a variety of novel effects. Some of them are due to the special layout of these devices, which often use a coplanar configuration with relatively large barrier channels and the possibility of…