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Related papers: Morphology of PbTe crystal surface sputtered by ar…

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Sputtering of PbTe crystals by Ar plasma with ion energies 50-550 eV is investigated. A dependence of sputter yields of the Te and Pb on the sputtering ion energy and sputtering time is measured. New phenomena: aperiodical oscillations of…

Materials Science · Physics 2017-01-09 D. M. Zayachuk , E. I. Slynko , V. E. Slynko , A. Csik

We investigate the morphologies of the Ge(001) surface that are produced by bombardment with a normally incident, broad argon ion beam at sample temperatures above the recrystallization temperature. Two previously-observed kinds of…

We investigate the kinetic roughening of Ar$^+$ ion-sputtered Pd(001) surface both experimentally and theoretically. \textit{In situ} real-time x-ray reflectivity and \textit{in situ} scanning tunneling microscopy show that nanoscale adatom…

Statistical Mechanics · Physics 2009-11-10 T. C. Kim , C. -M. Ghim , H. J. Kim , D. H. Kim , D. Y. Noh , N. D. Kim , J. W. Chung , J. S. Yang , Y. J. Chang , T. W. Noh , B. Kahng , J. -S. Kim

We study solid surface morphology created by off-normal ion-beam sputtering with an atomistic, solid-on-solid model of sputter erosion. With respect to an earlier version of the model, we extend this model with the inclusion of lateral…

Materials Science · Physics 2009-09-29 Emmanuel O. Yewande , Reiner Kree , Alexander K. Hartmann

Behaviour of a rare earth impurity of Eu in the PbTe single crystals grown by the Bridgman method from the melt with different initial concentrations of impurity N about 1*10+19 cm-3 and less is investigated with X-ray fluorescent element…

SnTe, an archetypical topological crystalline insulator, often shows a transition from a highly symmetric cubic phase to a rhombohedral structure at low temperatures. In order to achieve the highly symmetric cubic phase at low temperatures…

Materials Science · Physics 2022-04-06 Ayanesh Maiti , Ankita Singh , Kartik K. Iyer , Arumugam Thamizhavel

Topography evolution of Si(100) surface due to oblique incidence low energy ion beam sputtering (IBS) is investigated. Experiments were carried out at different elevated temperatures from 20$^{\circ}$C to 450$^{\circ}$C and at each…

Materials Science · Physics 2016-04-08 Debasree Chowdhury , Biswarup Satpati , Debabrata Ghose

We visualize the topological ladder and band inversions in PtTe$_2$ using spin-polarized photoemission spectroscopy augmented by three-dimensional momentum imaging. This approach enables the detection of spin polarization in dispersive…

Using two different experimental techniques, namely, chemical vapor deposition (CVD) and physical vapor deposition (PVD), we deposited a Lead sulphide (PbS) thin films with a very small lifetime. We investigated the morphology of the…

Materials Science · Physics 2014-09-12 H. S. H. Mohamed , M. Abdel-Hafiez , B. N. Miroshnikov , A. D. Barinov , I. N. Miroshnikova

We report formation of self organized InP nano dots using 3 keV Ar+ ion sputtering, at $15^\circ$ incidence from surface normal, on InP(111) surface. Morphology and optical properties of the sputtered surface, as a function of sputtering…

Materials Science · Physics 2007-08-22 D. Paramanik , S. Majumdar , S. R. Sahoo , S. N. Sahu , S. Varma

The growth morphology and the effects of surface reconstruction/relaxation of the habit faces on the crystal morphology of urea crystal are investigated from first principle using the Hartman-Perdok approach. A procedure has been developed…

Materials Science · Physics 2007-05-23 M. K. Singh

Empirical potential structure refinement (EPSR) simulations are performed on total neutron scattering data from powder samples of polytetrafluoroethylene (PTFE) and polychlorotrifluoroethylene (PCTFE), both at 300K. For PTFE a number of…

Soft Condensed Matter · Physics 2013-09-27 A K Soper , K Page , A Llobet

SnTe is a topological crystalline insulator that possesses spin-polarized, Dirac-dispersive surface states protected by crystal symmetry. Multiple surface states exist on the {100}, {110}, and {111} surfaces of SnTe, with the band structure…

Mesoscale and Nanoscale Physics · Physics 2015-06-22 Jie Shen , Yeonwoong Jung , Ankit S. Disa , Fred J. Walker , Charles H. Ahn , Judy J. Cha

$Ar^+$ ion has been used regularly for the cleaning of semiconductor, metal surfaces for epitaxial nanostructures growth. We have investigated the effect of low-energy $Ar^+$ ion sputtering and subsequent annealing on the…

Materials Science · Physics 2025-05-19 Jagadish Chandra Mahato , Anupam Roy , Rajib Batabyal , Debolina Das , Rahul Gorain , Tuya Dey , B. N. Dev

Ion sputtering induced nanoscale pattern formation on Ge (001) surface by 500 eV Ar+ bombardment has been investigated for a wide range of ion incidence angles at temperature of 300 deg.C. A fourfold symmetric topography forms in the…

Mesoscale and Nanoscale Physics · Physics 2019-10-11 Debasree Chowdhury , Debabrata Ghose

X-ray structural and spectral analyses, X-ray diffraction topography and metallography were used to study dendrite structure of Al-4 wt % Cu single crystals grown by the Bridgman technique at a rate of 1 mm/min and on seeds with <001>…

Materials Science · Physics 2008-12-31 V. O. Esin , A. S. Krivonosova , I. Zh. Sattybaev , L. V. Elokhina , T. G. Fedorova

Formation of p+ contact on Germanium is important for applications in diode detector and other electronic devices. In this work, thermally deposited Al on Ge crystal is annealed at 350oC followed by slow cooling for solid-state regrowth of…

We present models of surfaces of crystals in an environment where molecular beam epitaxy (MBE) and related methods of crystal growth like atomic layer epitaxy (ALE) can be performed. Besides detailed models of reconstructed (001) surfaces…

Materials Science · Physics 2007-05-23 Martin Ahr

We present angle resolved photoemission spectroscopy measurements of the surface states on in-situ grown (111) oriented films of Pb$_{1-x}$Sn$_{x}$Se, a three dimensional topological crystalline insulator. We observe surface states with…

A 30 nm Pt thin film evaporated onto a Si wafer was sputtered by 8 keV Ar$^{+}$ ions at various ion doses. The evolution of the modified sputtered films was monitored by atomic force microscopy (AFM), high resolution scanning electron…

Materials Science · Physics 2007-05-23 P. Karmakar , D. Ghose
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