Related papers: Manipulating exchange bias using all-optical helic…
In conventional exchange-bias system comprising of a bilayer film of ferromagnet (FM) and antiferromagnet (AFM), investigating the role of spin-disorder and spin-frustration inside the AFM and at the interface has been crucial in…
The exchange bias at ferromagnetic/antiferromagnetic interfaces strongly depends upon the state of antiferromagnetic (AF) layer which, due to strong magnetoelastic coupling, is sensitive to mechanical stresses. In the present paper we…
We report an unusual, non-monotonous dependence of the exchange bias on the thickness of the ferromagnetic layer in a ferromagnet/antiferromagnet bilayer system. We show that in epitaxial CoO/Fe(110) bilayers, the evolution of the Fe…
Magnetic tunnel junctions (MTJs) are elementary units of magnetic memory devices. For high-speed and low-power data storage and processing applications, fast reversal by an ultrashort laser pulse is extremely important. We demonstrate…
Ultra-fast magnetization switching triggered by a single femtosecond laser pulse has gained significant attention over the last decade for its potential in low-power consumption, high-speed memory applications. However, this phenomenon has…
An internal anisotropy pulse field is launched by an 8.3 ps short laser excitation, which triggers precessional magnetization dynamics of a polycrystalline NiFe/FeMn exchange bias system on the picosecond timescale. Due to the excitation…
Ultrafast manipulation of magnetic states is one of the necessities in modern data storage technology. Quantum antiferromagnets are promising candidates in this respect. The orientation of the order parameter, the sublattice magnetization,…
Control of magnetism without using magnetic fields enables large-scale integration of spintronic devices for memory, computation and communication in the beyond-CMOS era. Mechanisms including spin torque transfer, spin Hall effect, and…
The demand for faster magnetization switching speeds and lower energy consumption has driven the field of spintronics in recent years. The magnetic tunnel junction is the most developed spintronic memory device in which the magnetization of…
Thermally-assisted ultra-fast magnetization reversal in a DC magnetic field for magnetic multilayer thin films with perpendicular anisotropy has been investigated in the time domain using femtosecond laser heating. The experiment is set-up…
All-optical helicity-dependent magnetization switching (AO-HDS) is the quickest data recording technique using only ultrashort laser pulses. FePt grains provide an ideal platform for examining the interaction of effects conducting…
The idea to utilize not only the charge but also the spin of electrons in the operation of electronic devices has led to the development of spintronics, causing a revolution in how information is stored and processed. A novel advancement…
The magnetization dynamics of a synthetic antiferromagnet subject to a short magnetic field pulse, has been studied by using a combination of first-principles and atomistic spin dynamics simulations. We observe switching phenomena on the…
Electric-field induced magnetization switching in multiferroic magnetoelectric devices is promising for beyond Moore's law computing. We show here that interface-coupled multiferroic heterostructures, i.e., a ferroelectric layer coupled…
Magnetisation dynamics in exchange spring magnets have been studied using simulations of the FePt/Fe bilayer system. The FePt hard layer exhibits strong perpendicular magnetocrystalline anisotropy, while the soft (Fe) layer has negligible…
All-optical switching in a ferromagnetic spin valve is studied here using atomistic spin drift-diffusion dynamics, which includes contributions from spin pumping and superdiffusive transport. We find the switching is governed principally by…
All-optical switching (AOS) of magnetic domains by femtosecond laser pulses was first observed in the transition metal-rare earth (TM-RE) alloy GdFeCo1-5; this phenomenon demonstrated the potential for optical control of magnetism for the…
Electric field control of the magnetic state in ferrimagnets holds great promise for developing spintronic devices due to low power consumption. Here, we demonstrate a non-volatile reversal of perpendicular net magnetization in a…
With the recent experimental verification that ferroelectric lattice distortions survive in the metallic phase of some materials, there is a desire to create devices that are both switchable and take advantage of the novel functionalities…
We demonstrate control of magnetic domain structures in continuous FePd thin films by patterning their surfaces with plasma treatment. The Fe-oxide layer formed on the surface upon ambient exposure of the FePd alloy thin film grown on an…