Related papers: Shot noise in a harmonically driven ballistic grap…
We investigate the transport of electrons in disordered and pristine graphene devices. Fano shot noise, a standard metric to assess the mechanism for electronic transport in mesoscopic devices, has been shown to produce almost the same…
The theory for current fluctuations in ac-driven transport through nanoscale systems is put forward. By use of a generalized, non-Hermitian Floquet theory we derive novel explicit expressions for the time-averaged current and the…
We show experimentally that even when no bias voltage is applied to a quantum conductor, the electronic quantum partition noise can be investigated using GHz radiofrequency irradiation of a reservoir. Using a Quantum Point Contact…
Shot noise emerges due to the discrete nature of charge transport and provides direct access to the underlying microscopic transport mechanisms governing current flow in mesoscopic conductors. In this work, we demonstrate that quantum shot…
This letter investigates the bias-dependent low frequency noise of single layer graphene field-effect transistors. Noise measurements have been conducted with electrolyte-gated graphene transistors covering a wide range of gate and drain…
The electronic conductance of graphene-based bilayer flake systems reveal different quantum interference effects, such as Fabry-P\'erot resonances and sharp Fano antiresonances on account of competing electronic paths through the device.…
Transport properties of graphene - superconductor junction has been studied extensively to understand the interplay of the relativistic Dirac quasiparticles and superconductivity. Though shot noise measurements in graphene has been…
Low-frequency 1/f noise in electronics is a conductance fluctuation, that has been expressed in terms of a mobility "$\alpha$-noise" by Hooge and Kleinpenning. Understanding this noise in graphene is a key towards high-performance…
Using the recursive Green's function method, we study the problem of electron transport in a disordered single-layer graphene sheet. The conductivity is of order $e^2/h$ and its dependence on the carrier density has a scaling form that is…
We report results of experimental investigation of the low-frequency noise in the top-gate graphene transistors. The back-gate graphene devices were modified via addition of the top gate separated by 20 nm of HfO2 from the single-layer…
There exists a fascinating dual representation of the electric ac current flowing through a normal conductor. On the one hand, it can be understood in terms of charge transport. On the other hand, it consists in an electomagnetic field…
We observe a series of sharp resonant features in the differential conductance of graphene-hexagonal boron nitride-graphene tunnel transistors over a wide range of bias voltages between $\sim$10 and 200 mV. We attribute them to electron…
We study tunneling transport through quantum Aharonov-Bohm (AB) interferometers and demonstrate that interference effects strongly modify shot noise of the current. We discuss in detail two simplest setups: conventional single-channel…
We investigate the effect of interactions on shot noise in $\nu=2$ quantum Hall edges, where a repulsive coupling between co-propagating edge modes is expected to give rise to charge fractionalization. Using the method of non-equilibrium…
Interference between different quantum paths can generate Fano resonance. One of the examples is transport through a quasibound state driven by time-dependent scattering potential. Previously it is found that Fano resonance occurs as a…
We show that charge carrier transport in graphene exhibit sharp resonances in the presence of spatially and temporarily modulated scattering. Resonances occur when the period of an applied a-c field corresponds to the time taken by…
Substrate plays a crucial role in determining transport and low frequency noise behavior of graphene field effect devices. Typically, heavily dope Si/SiO$_2$ substrate is used to fabricate these devices for efficient gating.…
Photon-assisted electron transport in ballistic graphene is analyzed using scattering theory. We show that the presence of an ac signal (applied to a gate electrode in a region of the system) has interesting consequences on electron…
We predict shot noise enhancement in defect-free carbon nanotube field-effect transistors through a numerical investigation based on the self-consistent solution of the Poisson and Schrodinger equations within the non-equilibrium Green…
Potential steps naturally develop in graphene near metallic contacts. We investigate the influence of these steps on the transport in graphene Field Effect Transistors. We give simple expressions to estimate the voltage-dependent…