Related papers: Transport in Ferromagnet/Superconductor spin valve…
The structures of the superconducting spin valve (SSV) Fe/Si$_3$N$_4$/Pb/Si$_3$N$_4$/Fe (where Si$_3$N$_4$ is a dielectric insulating layer of controlled thickness) were investigated. The dependence of the magnitude of the SSV effect on the…
We theoretically study the nonlocal spin transport in a device consisting of a nonmagnetic metal (N) and ferromagnetic injector (F1) and detector (F2) electrodes connected to N. We solve the spin-dependent transport equations in a device…
We present a transfer matrix approach that combines the Blonder-Tinkham-Klapwijk (BTK) formalism and self-consistent solutions to the Bogolibuov-de Gennes (BdG) equations and use it to study the tunneling conductance and spin transport in…
Superconductor/ferromagnet (S/F) proximity effect theory predicts that the superconducting critical temperature of the F1/F2/S or F1/S/F2 trilayers for the parallel orientation of the F1 and F2 magnetizations is smaller than for the…
Superconducting spin valves based on the superconductor/ferromagnet (S/F) proximity effect are considered to be a key element in the emerging field of superconducting spintronics. Here, we demonstrate the crucial role of the morphology of…
We demonstrate the spin valve effect by ballistic transport in fully epitaxial MnAs ferromagnetic metal / GaAs semiconductor / GaAs:MnAs granular hybrid heterostructures. The GaAs:MnAs material contains ferromagnetic MnAs nanoparticles in a…
A superconducting double spin valve device is proposed. Its operation takes advantage of the interplay between the spin-filtering effect of ferromagnetic insulators and superconductivity-induced out-of-equilibrium transport. Depending on…
New mechanism of magnetoresistance, based on tunneling-emission of spin polarized electrons from ferromagnets (FM) into semiconductors (S) and precession of electron spin in the semiconductor layer under external magnetic field, is…
Novel spin transport behavior is theoretically shown to result from replacing the usual metal (or poly-silicon) gate in a silicon field-effect transistor with a ferromagnet, separated from the semiconductor by an ultra-thin oxide. The…
We report the superconducting properties of the Co/Pb/Co heterostructures with thin insulating interlayers. The main specific feature of these structures is the intentional oxidation of both superconductor/ferromagnet (S/F) interfaces. We…
We observe large amplitude changes in the resistance of ferromagnetic (F) wires at the onset of superconductivity of adjacent superconductors (S). New sharp peaks of large amplitude are found in the magnetoresistance of the F-wires. We…
In this work, we study the spin transport at the Ferromagnet$|$Noncentrosymmetric Superconductor (F$|$NCSC) junction of a Ferromagnet$|$Noncentrosymmetric Superconductor$|$Ferromagnet (F$|$NCSC$|$F) spin valve. We investigate the Tunnelling…
We study charge transport in a two dimensional hybrid systems consisting of nonmagnetic two dimensional electron gas with spin-orbit interaction sandwiched between a Ferromagnetic lead and a normal metallic lead (FM/2DEG/NM). An {\it…
Ferromagnet/Superconductor/Ferromagnet (F/S/F) trilayers constitute the core of a superconducting spin valve. The switching effect of the spin valve is based on interference phenomena occurring due to the proximity effect at the S/F…
We theoretically study the transport properties of a supramolecular spin valve, consisting of a carbon nanotube with two attached magnetic molecules, weakly coupled to metallic contacts. The emphasis is put on analyzing the change of the…
We have measured the transport properties of Ferromagnet - Superconductor nanostructures, where two superconducting aluminum (Al) electrodes are connected through two ferromagnetic iron (Fe) ellipsoids in parallel. We find that, below the…
We have studied superconducting properties of the spin-valve thin layer heterostructures CoO$_x$/F1/Cu/F2/Cu/Pb where the ferromagnetic F1 layer was standardly made of Permalloy whereas for the F2 layer we have taken a specially prepared…
The electron transport properties of hybrid ferromagnetic|normal metal structures such as multilayers and spin valves depend on the relative orientation of the magnetization direction of the ferromagnetic elements. Whereas the contrast in…
In this review we discuss spin and charge transport properties in graphene-based single-layer and few-layer spin-valve devices. We give an overview of challenges and recent advances in the field of device fabrication and discuss two of our…
A theory of spin-transport in hybrid normal metal - ferromagnetic electronic circuits is developed, taking into account non-collinear spin-accumulation. Spin-transport through resistive elements is described by 4 conductance parameters.…