Related papers: Intraband memory function and memory-function cond…
The reflectance of graphene is investigated in the framework of the Dirac model with account of its realistic properties, such as nonzero chemical potential and band gap, at any temperature. For this purpose, the exact reflection…
Recent theory has demonstrated that the value of the electron-phonon coupling strength $\lambda$ can be extracted directly from the thermal attenuation (Debye-Waller factor) of Helium atom scattering reflectivity. This theory is here…
The electron scattering by the short-range defects in the monolayer graphene is considered in the framework of the flatland model. We analyze the effect of this scattering on the electronic resistivity of the monolayer graphene (direct…
The electron-phonon interaction in monolayer graphene is investigated by using density functional perturbation theory. The results indicate that the electron-phonon interaction strength is of comparable magnitude for all four in-plane…
Electron devices based on graphene have lately received a considerable interest; in fact, they could represent the ultimate miniaturization, since the active area is only one atom tick. However, the gapless dispersion relation of graphene…
A microscopic theory of the electrical conductivity $\sigma(\omega)$ within the t-J model is developed. An exact representation for $\sigma(\omega)$ is obtained using the memory-function technique for the relaxation function in terms of the…
Electromagnetic memory is an infrared observable of gauge theory associated with soft photons and large gauge transformations. Despite its fundamental theoretical importance, it has not yet been experimentally verified. From a…
From a combination of careful and detailed theoretical and experimental studies, we demonstrate that the Boltzmann theory including all scattering mechanisms gives an excellent account, with no adjustable parameters, of high electric field…
We present a dynamical mean-field study of the nonperturbative electronic mechanisms, which may lead to significant enhancements of the electron-phonon coupling in correlated electron systems. Analyzing the effects of electronic…
We present a trajectory-resolved framework for charge transport in graphene and related two-dimensional carbon systems beyond the ideal ballistic and fully coherent limits. Transport is described by kinetic Monte Carlo hopping on a…
We report a comprehensive micro-Raman scattering study of electrochemically-gated graphene field-effect transistors. The geometrical capacitance of the electrochemical top-gates is accurately determined from dual-gated Raman measurements,…
Disorder and doping have profound effects on the intrinsic physical mechanisms of superconductivity. In this paper, we employed the determinant quantum Monte Carlo method to investigate the symmetry-allowed superconducting orders on the…
We derive analytical expressions for the conductivity of bilayer graphene (BLG) using the Boltzmann approach within the the Born approximation for a model of Gaussian disorders describing both short- and long-range impurity scattering. The…
Planar electrodes patterned on a ferroelectric substrate are shown to provide lateral control of the conductive state of a two-terminal graphene stripe. A multi-level and on-demand memory control of the graphene resistance state is…
Achieving optical operation of logic elements, especially those that involve 2D layers, can open the long sought era of optical computing. However, the efficient optical modulation of the electronic properties of 2D materials including…
The independence of the dynamic conductivity of intrinsic graphene of frequency takes its origin in the compensation of the vanishing density of states by the diverging matrix element of the corresponding interband transition. The…
We consider a problem of obtaining information about the scattering potentials of the monolayer graphene sample using available experimental data on its resistance. We have in mind a development of the study describing super-high mobility…
We present a circuit-compatible compact model of the intrinsic capacitances of graphene field-effect transistors (GFETs). Together with a compact drain current model, a large-signal model of GFETs is developed combining both models as a…
We derive the steady-state electron distribution function for a semiconductor driven far from equilibrium by the inter-band photoexcitation assumed homogeneous over the nanoscale sample. Our analytical treatment is based on the…
The quantum capacitance model is applied to obtain an exact solution for the space-resolved carrier density in a multigated doped graphene sheet at zero temperature, with quantum correction arising from the finite electron capacity of the…