Related papers: CoMET: Composite-Input Magnetoelectric-based Logic…
Although the development of spintronic devices has advanced significantly over the past decade with the use of ferromagnetic materials, the extensive implementation of such devices has been limited by the notable drawbacks of these…
Voltage driven magneto-electric (ME) switching of ferro-magnets has shown potential for future low-energy spintronic memories. In this paper, we first analyze two different ME devices viz. ME-MTJ and ME-XNOR device with respect to…
The structural, dielectric, magnetic, and magnetoelectric (ME) properties of particulate composites containing lead-iron niobate and lead titanate piezoelectric 0.94[PbFe$_{0.5}$Nb$_{0.5}$O$_3$]-0.06[PbTi$_{0.5}$O$_3$] (PFN-PT) and…
Antiferromagnets (AFMs) are presently considered as promising materials for applications in spintronics and random access memories due to the robustness of information stored in AFM state against perturbing magnetic fields (P. Wadley et…
First-principles calculations of the epitaxial-strain phase diagram of perovskite SrCoO$_{3}$ are presented. Through combination of the large spin-phonon coupling with polarization-strain coupling and coupling of the band gap to the polar…
The inverse Faraday effect (IFE), where a static magnetization is induced by circularly polarized light, offers a promising route to ultrafast control of spin states. Here we study the IFE in Mott insulators using the Floquet theory. We…
We theoretically investigate influences of electronic circuit delay, noise and temperature on write-error-rate (WER) in voltage-controlled magnetization switching operation of a magnetic-topological-insulator-based (MTI) device by means of…
Spintronic devices are a promising beyond-CMOS device option thanks to their energy efficiency and compatibility with CMOS. To accurately capture their multi-physics dynamics, a rigorous treatment of both spin and charge and their…
Controlling magnetic anisotropy energy (MAE) in two-dimensional (2D) ferromagnetic materials is crucial for designing novel spintronic devices. Using first-principles calculations, we systematically investigate the magnetic properties of…
We describe a spin logic device with controllable magnetization switching of perpendicularly magnetized ferromagnet / heavy metal structures on a ferroelectric (1-x)[Pb(Mg1/3Nb2/3)O3]-x[PbTiO3] (PMN-PT) substrate using current-induced…
The shifted frequency-based electromagnetic transient (SFEMT) simulation has greatly improved the computational efficiency of traditional electromagnetic transient (EMT) simulation for the ac grid. This letter proposes a novel interface for…
We report the use of high magnetomechanical coupling ferrites in magnetoelectric (ME) layered composites. Bilayer samples combining $(Ni_{0.973} Co_{0.027})_{1-x} Zn_x Fe_2 O_4$ ferrites ($x = 0-0.5$) synthesized by non conventional…
The search for new materials for energy-efficient electronic devices has gained unprecedented importance. Among the various classes of magnetic materials driving this search are antiferromagnets, magnetoelectrics, and systems with…
Heterostructures based on two dimensional (2D) materials offer the possibility to achieve synergistic functionalities which otherwise remain secluded by their individual counterparts. Herein ferroelectric polarization switching in…
We demonstrate a three-terminal spin wave-based device utilizing spin wave interference. The device consists of three coplanar transmission lines inductively coupled to the 100nm thick CoFe film. Two spin wave signals are excited by…
Mutiferroics are a novel class of next generation multifunctional materials, which display simultaneous magnetic spin, electric dipole, and ferroelastic ordering, and have drawn increasing interest due to their multi-functionality for a…
Magnetic skyrmions are promising candidates for logic-in-memory applications, intrinsically merging high density non-volatile data storage with computing capabilities, owing to their nanoscale size, fast motion, and mutual repulsions.…
This paper introduces BFEMP, a new approach for monolithically coupling the Material Point Method (MPM) with the Finite Element Method (FEM) through barrier energy-based particle-mesh frictional contact using a variational time-stepping…
Electrical manipulation of magnetic order by current-induced spin torques lays the foundation for spintronics. One promising approach is encoding information in the N\'eel vector of antiferromagnetic (AFM) materials, particularly to…
The observation of strong magnetoelectric effects is reported in thick film bilayers and multilayers of ferrite-lead titanate zirconate (PZT) and lanthanum nanganite-PZT. The ferrites used in our studies included pure and zinc substituted…