Related papers: MESL: Proposal for a Non-volatile Cascadable Magne…

As nanoelectronics approaches the nanometer scale, a massive effort is underway to identify the next scalable logic technology beyond Complementary Metal Oxide Semiconductor (CMOS) computing. Such computing technology needs to improve…

In this technical note, we address the comments on the energy estimates for Magnetoelectric Spin-orbit (MESO) Logic, a new logic device proposed by the authors. We provide an analytical derivation of the switching energy, and support it…

Researchers from Intel Corporation recently proposed "Magneto-Electric Spin Orbit (MESO)" logic as a new strategy for beyond-CMOS electronics [1]. The Intel researchers project that this concept has the potential to reduce the switching…

We demonstrate a non-volatile magnetoelectric magnonic memory (MEMM) that enables fully electrical write/read via direct magnon-driven sensing in an insulating antiferromagnet. A fabricated SrIrO3/La-BiFeO3/SrIrO3 trilayer exhibits sub-100…

We describe a spin logic device with controllable magnetization switching of perpendicularly magnetized ferromagnet / heavy metal structures on a ferroelectric (1-x)[Pb(Mg1/3Nb2/3)O3]-x[PbTiO3] (PMN-PT) substrate using current-induced…

We propose magnetic threshold-logic (MTL) design based on non-volatile spin-torque switches. A threshold logic gate (TLG) performs summation of multiple inputs multiplied by a fixed set of weights and compares the sum with a threshold. MTL…

The need for low power alternatives to digital electronic circuits has led to increasing interest in logic devices where information is stored in nanomagnets. This includes both nanomagnetic logic (NML) where information is communicated…

A new proposal is given for designing a non-volatile, completely spin logic device, that can be reprogrammed for different functional classical logical operations. We use the concept of bias driven spin dependent circular current and…

This paper presents a novel design concept for spintronic nanoelectronics that emphasizes a seamless integration of spin-based memory and logic circuits. The building blocks are magneto-logic gates based on a hybrid graphene/ferromagnet…

In this paper we discuss the potential of emerging spintorque devices for computing applications. Recent proposals for spinbased computing schemes may be differentiated as all-spin vs. hybrid, programmable vs. fixed, and, Boolean vs.…

We propose and numerically simulate novel reconfigurable logic gates employing spin metal-oxide-semiconductor field-effect transistors (spin MOSFETs). The output characteristics of the spin MOSFETs depend on the relative magnetization…

Memtranstor that correlates charge and magnetic flux via nonlinear magnetoelectric effects has a great potential in developing next-generation nonvolatile devices. In addition to multi-level nonvolatile memory, we demonstrate here that…

All-spin-based computing combining logic and nonvolatile magnetic memory is promising for emerging information technologies. However, the realization of a universal spin logic operation representing a reconfigurable building block with…

While superconductors are highly attractive for energy-efficient computing, fundamental limitations in their logic circuit integration have hindered scaling and led to increased energy consumption. We therefore propose and experimentally…

Recently several device and circuit design techniques have been explored for applying nano-magnets and spin torque devices like spin valves and domain wall magnets in computational hardware. However, most of them have been focused on…

The need to find low power alternatives to digital electronic circuits has led to increasing interest in alternative switching schemes like the magnetic quantum cellular automata(MQCA) that store information in nanomagnets which communicate…

A long-standing goal of computer technology is to process and store digital information with the same device in order to implement new architectures. One way to accomplish this is to use nanomagnetic `non-volatile' logic gates that can…

All Spin Logic gates employ multiple nano-magnets interacting through spin-torque using non-magnetic channels. Compactness, non-volatility and ultra-low voltage operation are some of the attractive features of ASL, while, low…

As CMOS nears the end of the projected scaling roadmap, significant effort has been devoted to the search for new materials and devices that can realize memory and logic. Spintronics, is one of the promising directions for the Post-CMOS…

Voltage driven magneto-electric (ME) switching of ferro-magnets has shown potential for future low-energy spintronic memories. In this paper, we first analyze two different ME devices viz. ME-MTJ and ME-XNOR device with respect to…