Related papers: Purely Antiferromagnetic Magnetoelectric Random Ac…
Electrical manipulation of magnetic order by current-induced spin torques lays the foundation for spintronics. One promising approach is encoding information in the N\'eel vector of antiferromagnetic (AFM) materials, particularly to…
Voltage driven magneto-electric (ME) switching of ferro-magnets has shown potential for future low-energy spintronic memories. In this paper, we first analyze two different ME devices viz. ME-MTJ and ME-XNOR device with respect to…
Magnetic random access memory that uses magnetic tunnel junction memory cells is a high performance, non-volatile memory technology that goes beyond traditional charge-based memories. Today its speed is limited by the high magnetization of…
Antiferromagnetic materials have a vanishingly small net magnetization, which generates weak dipolar fields and makes them robust against external magnetic perturbation and rapid magnetization dynamics, as dictated by the geometric mean of…
The coexistence and coupling between magnetization and electric polarization in multiferroic materials provide extra degrees of freedom for creating next-generation memory devices. A variety of concepts of multiferroic or magnetoelectric…
Magneto-Electric FET (MEFET) is a recently developed post-CMOS FET, which offers intriguing characteristics for high speed and low-power design in both logic and memory applications. In this paper, for the first time, we propose a…
Ferromagnets are key materials for sensing and memory applications. In contrast, antiferromagnets that represent the more common form of magnetically ordered materials, have so far found less practical application beyond their use for…
Magnetic random access memory (MRAM) is a leading emergent memory technology that is poised to replace current non-volatile memory technologies such as eFlash. However, the scaling of MRAM technologies is heavily affected by…
Ferroelectric field effect transistor (FeFET) memory has shown the potential to meet the requirements of the growing need for fast, dense, low-power, and non-volatile memories. In this paper, we propose a memory architecture named…
The recently discovered electrical-induced switching of antiferromagnetic (AF) materials that have spatial inversion asymmetry has enriched the field of spintronics immensely and opened the door for the concept of antiferromagnetic MRAM.…
In tunnel junctions with ferroelectric barriers, switching the polarization direction modifies the electrostatic potential profile and the associated average tunnel barrier height. This results in strong changes of the tunnel transmission…
Resistance switching random access memory (ReRAM), with the ability to repeatedly modulate electrical resistance, has been highlighted as a feasible high-density memory with the potential to replace negative-AND (NAND) flash memory. Such…
The explosive growth of artificial intelligence and data-intensive computing has brought crucial challenge to modern information science and technology, i.e. conceptually new devices with superior properties are urgently desired. Memristor…
The field-free spin-orbit torque induced 180{\deg} reorientation of perpendicular magnetization is beneficial for the high performance magnetic memory. The antiferromagnetic material (AFM) can provide higher operation speed than the…
Ferroelectric materials with switchable electric polarization hold great promise for a plethora of emergent applications, such as post-Moore's law nanoelectronics, beyond-Boltzmann transistors, non-volatile memories, and above-bandgap…
Antiferromagnets are magnetically ordered materials which exhibit no net moment and thus are insensitive to magnetic fields. Antiferromagnetic spintronics aims to take advantage of this insensitivity for enhanced stability, while at the…
The unique features of ultrafast spin dynamics and the absence of macroscopic magnetization in antiferromagnetic (AFM) materials provide a distinct route towards high-speed magnetic storage devices with low energy consumption and high…
Magnetic random-access memory (MRAM) driven by spin-transfer torque (STT) is a major contender for future memory applications. The energy dissipation involved in writing remains problematic, even with the advent of more efficient…
The nonvolatile magnetoresistive random access memory (MRAM) is believed to facilitate emerging applications, such as in memory computing, neuromorphic computing and stochastic computing. Two dimensional (2D) materials and their van der…
Recent results in electric-field control of magnetism have paved the way for the design of alternative magnetic and spintronic devices with enhanced functionalities and low power consumption. Among the diversity of reported magnetoelectric…