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Emerging applications of photonics in computing, sensing, and security increasingly demand complex input-output behaviors, including highly nonlinear transformations of optical signals. Traditional photonic systems rely on highly structured…
Ferroelectric materials with switchable electric polarization hold great promise for a plethora of emergent applications, such as post-Moore's law nanoelectronics, beyond-Boltzmann transistors, non-volatile memories, and above-bandgap…
Non-volatile capacitive memories (nvCAPs) exhibiting AC small-signal capacitance on/off ratio (Con/Coff) with non-destructive read have emerged as a promising device for next-generation memory paradigms. Recently, BEOL-compatible…
A Ferroelectric Analog Non-Volatile Memory based on a WOx electrode and ferroelectric HfZrO4 layer is fabricated at a low thermal budget (~375C), enabling BEOL processes and CMOS integration. The devices show suitable properties for…
Resistive memory-based reconfigurable systems constructed by CMOS-RRAM integration hold great promise for low energy and high throughput neuromorphic computing. However, most RRAM technologies relying on filamentary switching suffer from…
The present von Neumann computing paradigm involves a significant amount of information transfer between a central processing unit (CPU) and memory, with concomitant limitations in the actual execution speed. However, it has been recently…
Physical Unclonable Functions (PUFs) serve as lightweight, hardware-intrinsic entropy sources widely deployed in IoT security applications. However, delay-based PUFs are vulnerable to Machine Learning Attacks (MLAs), undermining their…
As process technology continues to scale aggressively, circuit aging in a neuromorphic hardware due to negative bias temperature instability (NBTI) and time-dependent dielectric breakdown (TDDB) is becoming a critical reliability issue and…
In this letter, a physical unclonable function (PUF)-advanced encryption standard (AES)-PUF is proposed as a new PUF architecture by embedding an AES cryptographic circuit between two conventional PUF circuits to conceal their…
Resistive Random Access Memory (ReRAM) is a promising candidate for implementing Computing-in-Memory (CIM) architectures and neuromorphic circuits. ReRAM cells exhibit significant variability across different memristive devices and cycles,…
Redox-based resistive switching devices (ReRAM) are an emerging class of non-volatile storage elements suited for nanoscale memory applications. In terms of logic operations, ReRAM devices were suggested to be used as programmable…
Diffractive optical neural networks (DONNs) have demonstrated unparalleled energy efficiency and parallelism by processing information directly in the optical domain. However, their computational expressivity is constrained by static,…
Y-Flash memristors utilize the mature technology of single polysilicon floating gate non-volatile memories (NVM). It can be operated in a two-terminal configuration similar to the other emerging memristive devices, i.e., resistive…
Neuromorphic computing with non-volatile memory (NVM) can significantly improve performance and lower energy consumption of machine learning tasks implemented using spike-based computations and bio-inspired learning algorithms. High…
A new model of a symmetric two-terminal non-volatile RRAM device based on Perovskite oxide thin film materials, specifically Pr1-xCaxMnO3 (PCMO), is proposed and analyzed. The model consists of two identical half-parts, which are completely…
The morphological evolution of the conducting filament (CF) predominantly controls the electric response of the resistive random access memory (ReRAM) devices. However, the parameters -- in terms of the material and the processing -- which…
This work presents a novel approach to configure 2T-nC ferroelectric RAM (FeRAM) for performing single cell logic-in-memory operations, highlighting its advantages in energy-efficient computation over conventional DRAM-based approaches.…
Much effort has been devoted to device and materials engineering to realize nanoscale resistance random access memory (RRAM) for practical applications, but there still lacks a rational physical basis to be relied on to design scalable…
Due to low power consumption and high-speed performance, superconductor circuit technology has emerged as an attractive and compelling post-CMOS technology candidate. However, the design of dense memory circuits presents a significant…
As transistor-based memory technologies like dynamic random access memory (DRAM) approach their scalability limits, the need to explore alternative storage solutions becomes increasingly urgent. Phase-change memory (PCM) has gained…