Related papers: Statistical exchange-coupling errors and the pract…
The small size and excellent integrability of silicon metal-oxide-semiconductor (SiMOS) quantum dot spin qubits make them an attractive system for mass-manufacturable, scaled-up quantum processors. Furthermore, classical control electronics…
The errors caused by qubit displacements from their prescribed locations in an ensemble of spin chains are estimated analytically and calculated numerically for a quantum computer based on phosphorus donors in silicon. We show that it is…
In recent advancements of quantum computing utilizing spin qubits, it has been demonstrated that this platform possesses the potential for implementing two-qubit gates with fidelities exceeding 99.5%. However, as with other qubit platforms,…
Entangling two quantum bits by letting them interact is the crucial requirements for building a quantum processor. For qubits based on the spin of the electron, these two-qubit gates are typically performed by exchange interaction of the…
Shuttling of single electrons in gate-defined silicon quantum dots is numerically simulated. A minimal gate geometry without explicit tunnel barrier gates is introduced, and used to define a chain of accumulation mode quantum dots, each…
Developing devices that can reliably and accurately demonstrate the principles of superposition and entanglement is an on-going challenge for the quantum computing community. Modeling and simulation offer attractive means of testing early…
We present a strategy for producing multi-qubit gates that promise high fidelity with minimal tuning requirements. Our strategy combines gap protection from the adiabatic theorem with dynamical decoupling in a complementary manner. To avoid…
Over the past decade donor spin qubits in isotopically enriched $^{28}$Si have been intensely studied due to their exceptionally long coherence times. More recently bismuth donor electron spins have become popular because Bi has a large…
Donors in silicon hold considerable promise for emerging quantum technologies, due to the their uniquely long electron spin coherence times. Bi donors in silicon differ from P and other Group V donors in several significant respects: they…
Electrically addressing spin systems is predicted to be a key component in developing scalable semiconductor-based quantum processing architectures, to enable fast spin qubit manipulation and long-distance entanglement via microwave…
Selenium impurities in silicon are deep double donors and their optical and electronic properties have been recently investigated due to their application for infrared detection. However, a singly-ionised selenium donor (Se$^{+}$) possesses…
Prospects for the quantum control of electrons in the silicon quantum computer architecture are considered theoretically. In particular, we investigate the feasibility of shuttling donor-bound electrons between the impurity in the bulk and…
Coherent interactions at a distance provide a powerful tool for quantum simulation and computation. The most common approach to realize an effective long-distance coupling 'on-chip' is to use a quantum mediator, as has been demonstrated for…
We use the nuclear spin coherence of $^{31}$P donors in $^{28}$Si to determine flip-flop rates of donor electron spins. Isotopically purified $^{28}$Si crystals minimize the number of $^{29}$Si flip-flops, and measurements at 1.7 K suppress…
Adiabatic shuttling of single impurity bound electrons to gate induced surface states in semiconductors has attracted much attention in recent times, mostly in the context of solid-state quantum computer architecture. A recent transport…
Semiconductor quantum-dot spin qubits are a promising platform for quantum computation, because they are scalable and possess long coherence times. In order to realize this full potential, however, high-fidelity information transfer…
Semiconductor spin qubits have gained increasing attention as a possible platform to host a fault-tolerant quantum computer. First demonstrations of spin qubit arrays have been shown in a wide variety of semiconductor materials. The highest…
Properties of quantum dot based spin qubits have significant inter-device variability due to unavoidable presence of various types of disorder in semiconductor nanostructures. A significant source of this variability is charge disorder at…
We analyzed the fidelity of the quantum state transfer (QST) from a photon-polarization qubit to an electron-spin-polarization qubit in a semiconductor quantum dot, with special attention to the exchange interaction between the electron and…
The gate fidelity and the coherence time of a qubit are important benchmarks for quantum computation. We construct a qubit using a single electron spin in a Si/SiGe quantum dot and control it electrically via an artificial spin-orbit field…