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RowHammer is a major read disturbance mechanism in DRAM where repeatedly accessing (hammering) a row of DRAM cells (DRAM row) induces bitflips in physically nearby DRAM rows (victim rows). To ensure robust DRAM operation, state-of-the-art…

As process technology scales down to smaller dimensions, DRAM chips become more vulnerable to disturbance, a phenomenon in which different DRAM cells interfere with each other's operation. For the first time in academic literature, our ISCA…

This paper summarizes the idea of Low-Cost Interlinked Subarrays (LISA), which was published in HPCA 2016, and examines the work's significance and future potential. Contemporary systems perform bulk data movement movement inefficiently, by…

As SRAM-based caches are hitting a scaling wall, manufacturers are integrating DRAM-based caches into system designs to continue increasing cache sizes. While DRAM caches can improve the performance of memory systems, existing DRAM cache…

Effects of radiation on electronic circuits used in extra-terrestrial applications and radiation prone environments need to be corrected. Since FPGAs offer flexibility, the effects of radiation on them need to be studied and robust methods…

On-chip memory (usually based on Static RAMs-SRAMs) are crucial components for various computing devices including heterogeneous devices, e.g., GPUs, FPGAs, ASICs to achieve high performance. Modern workloads such as Deep Neural Networks…

In recent years, memory wall has been a great performance bottleneck of computer system. To overcome it, Non-Volatile Main Memory (NVMM) technology has been discussed widely to provide a much larger main memory capacity. Last year, Intel…

Due to the globalization in the semiconductor supply chain, counterfeit dynamic random-access memory (DRAM) chips/modules have been spreading worldwide at an alarming rate. Deploying counterfeit DRAM modules into an electronic system can…

DRAM is the prevalent main memory technology, but its long access latency can limit the performance of many workloads. Although prior works provide DRAM designs that reduce DRAM access latency, their reduced storage capacities hinder the…

Modern computing systems are embracing hybrid memory comprising of DRAM and non-volatile memory (NVM) to combine the best properties of both memory technologies, achieving low latency, high reliability, and high density. A prominent…

To understand and improve DRAM performance, reliability, security and energy efficiency, prior works study characteristics of commodity DRAM chips. Unfortunately, state-of-the-art open source infrastructures capable of conducting such…

This paper summarizes the idea of Subarray-Level Parallelism (SALP) in DRAM, which was published in ISCA 2012, and examines the work's significance and future potential. Modern DRAMs have multiple banks to serve multiple memory requests in…

This paper summarizes the idea of Tiered-Latency DRAM, which was published in HPCA 2013. The key goal of TL-DRAM is to provide low DRAM latency at low cost, a critical problem in modern memory systems. To this end, TL-DRAM introduces…

This paper studies the impact of DRAM writes on DDR5-based system. To efficiently perform DRAM writes, modern systems buffer write requests and try to complete multiple write operations whenever the DRAM mode is switched from read to write.…

State-of-the-art DRAM read disturbance mitigations rely on the read disturbance threshold (RDT) (e.g., the number of aggressor row activations needed to induce the first read disturbance bitflip) to securely and performance- and…

Advancement in Processor technology has made it easy to handle data-intensive workloads, but limiting main memory advances has created performance bottlenecks. In DRAM, there have been improvements in DRAM access latency as well as…

Putting the DRAM on the same package with a processor enables several times higher memory bandwidth than conventional off-package DRAM. Yet, the latency of in-package DRAM is not appreciably lower than that of off-package DRAM. A promising…

RowHammer is a circuit-level DRAM vulnerability where repeatedly accessing (i.e., hammering) a DRAM row can cause bit flips in physically nearby rows. The RowHammer vulnerability worsens as DRAM cell size and cell-to-cell spacing shrink.…

Modern DRAM modules are often equipped with hardware error correction capabilities, especially for DRAM deployed in large-scale data centers, as process technology scaling has increased the susceptibility of these devices to errors. To…

Compute-in-memory (PIM) mitigates the memory wall by performing computation within memory, reducing data movement and improving energy efficiency. DRAM-based PIM is particularly attractive due to its high density, mature manufacturing…