Related papers: Stress engineering with silicon nitride stressors …

Physical models of Ge energy band structure and material loss were implemented in LASTIP(TM), a 2D simulation tool for edge emitting laser diodes. The model calculation is able to match experimental data available. Important design…

We theoretically investigate how the threshold of a Ge-on-Si laser can be minimized and how the slope efficiency can be maximized in presence of both biaxial tensile strain and n-type doping. Our finding shows that there exist ultimate…

Strain-engineering in SiGe nanostructures is fundamental for the design of optoelectronic devices at the nanoscale. Here we explore a new strategy, where SiGe structures are laterally confined by the Si substrate, to obtain high tensile…

GeSn alloys are promising candidates for complementary metal-oxide-semiconductor (CMOS)-compatible, tunable lasers. Relaxation of residual compressive strain in epitaxial GeSn has recently shown promise in improving the lasing performance.…

In this work, AlGaN/GaN HEMTs with dual-layer SiNx stressors (composed of a low-stress layer and a high-stress layer) were investigated. The low-stress padding layer solved the surface damage problem caused during the deposition of the…

Laser micro-welding is an advanced manufacturing method today applied in various domains. However, important physical limitations have prevented so far to demonstrate its applicability in silicon and other technology-essential…

Due to the piezoelectric nature of GaN, the 2DEG in AlGaN/GaN HEMT could be engineered by strain. In this work, SiNx deposited using dual-frequency PECVD was used as a stressor. The output performance of the devices was dominated by the…

Nanowires (NWs) with a unique one-dimensional structure can monolithically integrate high-quality III-V semiconductors onto Si platform, which is highly promising to build lasers for Si photonics. However, the lasing from…

The lack of high power integrated lasers have been limiting silicon photonics. Despite much progress made in chip-scale laser integration, power remains below the level required for key applications. The main inhibiting factor for high…

GeSn alloys are the most promising semiconductors for light emitters entirely based on group IV elements. Alloys containing more than 8 at.% Sn have fundamental direct band-gaps, similar to conventional III-V semiconductors and thus can be…

We investigate the tensile stress in freely suspended nanomechanical string resonators, and observe a material-independent dependence on the resonator length. We compare strongly stressed sting resonators fabricated from four different…

The study proposes an ultra-thin back side illuminated (BSI) and top-illuminated, Ge on Si photodetector (PD), for 1 to 1.4 microns wavelength range. The Ge thickness of 350 nm allows us to achieve high-speed performance at >60 GHz, while…

Precise control of tensile stress and intrinsic damping is crucial for the optimal design of nanomechanical systems for sensor applications and quantum optomechanics in particular. In this letter we study the in uence of oxygen plasma on…

Understanding the mechanical interplay between silicon anodes and their surrounding solid-electrolyte interphase (SEI) is essential to improve the next generation of lithium-ion batteries. We model and simulate a 2D elliptical silicon…

It is widely accepted that the properties of most semiconductor nanocrystals can be tuned by their core size, shape and material. In covalent semiconductor nanocrystal materials, such as silicon, germanium or carbon, certain degree of…

Silicon nanowires (Si NW) are ideal candidates for solution processable field effect transistors (FETs). The interface between the nanowire channel and the gate dielectric plays a crucial role in the FET performance, and it can be…

In strained mechanical resonators, the concurrence of tensile stress and geometric nonlinearity dramatically reduces dissipation. This phenomenon, dissipation dilution, is employed in mirror suspensions of gravitational wave interferometers…

We theoretically investigate the effect of <100> uniaxial strain on a Ge-on-Si laser using deformation potentials. We predict a sudden and dramatic ~200x threshold reduction upon applying sufficient uniaxial tensile strain to the Ge gain…

Stoichiometric silicon nitride has emerged as a widely used integrated photonic material owing to its high index of refraction, nonlinear optical properties, and broad transparency window spanning visible to mid-IR frequencies. However,…

The large volume change of the silicon (Si) during lithiation and delithiation process has long been a problem impeding its application as one of the most promising anode materials for LIBs. In this paper, we proposed a conceptually new…