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Phase change memory has been developed into a mature technology capable of storing information in a fast and non-volatile way, with potential for neuromorphic computing applications. However, its future impact in electronics depends…
We calculate the effective resistivity of a macroscopically disordered two dimensional conductor consisting of two components in a perpendicular magnetic field. When two components have equal area fractions, we use a duality theorem to show…
We present the design and implementation of a measurement system that enables parallel drive and detection of small currents and voltages at numerous electrical contacts to a multi-terminal electrical device. This system, which we term a…
Resistive switching devices based on transition metal oxides require formation of a conductive filament in order for the device to be able to switch. Such filaments have been proposed to form by the reduction of the oxide due to application…
Inspired by the work of Kamenev and Kohn, we present a general discussion of the two-terminal dc conductance of molecular devices within the framework of Time Dependent Current-Density Functional Theory. We derive a formally exact…
We propose to couple the flux degree of freedom of one mode with the charge degree of freedom of a second mode in a hybrid superconducting-semiconducting architecture. Nonreciprocity can arise in this architecture in the presence of…
Contact resistance is a severe performance bottleneck for electronic devices based on two-dimensional layered (2D) semiconductors, whose contacts are Schottky rather than Ohmic. Although there is general consensus that the injection…
We provide a critical perspective on the collection of low-temperature transport phenomena in low-density two-dimensional semiconductor systems often referred to as the 2D metal-insulator transition. We discuss the physical mechanisms…
Measurements of the variation with temperature of the dc resistivity, ac susceptibility, dc magnetization and microwave loss for several systems of pseudo-cubic manganites reveal that the characteristic temperatures delineated by the…
A large spin-dependent and electric field-tunable magnetoresistance of a two-dimensional electron system (2DES) is a key ingredient for the realization of many novel concepts for spin-based electronic devices. The low magnetoresistance…
Exploration of novel resistive switching materials attracts attention to replace conventional Si-based transistors and to achieve neuromorphic computing that can surpass the limit of the current Von-Neumann computing for the time of…
The resistivity maximum at a temperature $T=T_{\mathrm{max}}$ is a recurring feature of bandwidth-tuned Mott systems, yet its meaning remains controversial: is it a coherence-incoherence crossover of an electronically homogeneous metal, or…
The development in electronic sector has brought a remarkable change in the life style of mankind. At the same time this technological advancement results adverse effect on environment due to the use of toxic and non degradable materials in…
The use of materials in particle accelerator applications implies the consideration of physical properties in different environments than usual industrial applications. Cryogenic temperatures, high radiation, medium to high vacuum and high…
Magnetoresistance (MR) is a characteristic that the resistance of a substance changes with the external magnetic field, reflecting various physical origins and microstructures of the substance. A large MR, namely a huge response to a low…
The power and energy consumption of resistive switching devices can be lowered by reducing their active layer dimensions. Efforts to push this low-energy switching property to its limits have led to the investigation of active regions made…
Both longitudinal and transverse coupling impedance for some critical components need to be measured for accelerator design. The twin wires method is widely used to measure longitudinal and transverse impedance on the bench. A mode error is…
We develop a variational mean-field theory of the ferromagnetic transition in compounds like Lanthanum-Manganite within the framework of the Double-Exchange Model supplemented by modest disorder. We obtain analytical expressions for the…
In this study, four different techniques are presented. 1 Rectangular waveguide measurement technique for normal microwave materials microwave properties such as permeability and permittivity. This technique removed guess parameter and…
We report microwave impedance measurements of a superconductor-semiconductor hybrid nanowire device with three terminals (3T). Our technique makes use of transmission line resonators to acquire the nine complex scattering matrix parameters…