Related papers: Potential-inserted quantum well design for quantum…
We investigate triple V-shaped type-II quantum wells designed to emit at 6-9 {\mu}m wavelength range, consisting of three InAs(Sb) electron quantum wells and two Ga0.6In0.4Sb hole quantum wells. The wells' composition and thicknesses are…
We present terahertz quantum cascade lasers operating at a defect mode of a photonic crystal bandgap. This class of devices exhibits single mode emission and low threshold current compared to standard metal-metal lasers. The mode…
The recent demonstration of a terahertz (THz) molecular gas laser pumped by a mid-infrared quantum cascade laser (QCL) has opened up new perspectives for this family of sources, traditionally relying on CO2-laser pumping. A so far open…
We suggest to use InAs/GaSb coupled quantum wells for THz lasing. In these heterostructures THz lasing is based not on intersubband but on interband transitions. Crucial advantages of this design in comparison with intersubband lasers are…
Terahertz sources based on intra-cavity difference-frequency generation in mid-infrared quantum cascade lasers (THz DFG-QCLs) have recently emerged as the first monolithic electrically-pumped semiconductor sources capable of operating at…
A laser can be understood as thermodynamic engine converting heat to a coherent single mode field close to Carnot efficiency. From this perspective spectral shaping of the excitation light generates a higher effective temperature on the…
It is believed that passive mode locking is virtually impossible in quantum cascade lasers (QCLs) because of too fast carrier relaxation time. Here, we revisit this possibility and theoretically show that stable mode locking and pulse…
We explore two parabolic quantum well (PQW) samples, with and without Bragg mirrors, in order to optimise the building blocks of a Bosonic Cascade Laser. The photoluminescence spectra of a PQW microcavity sample is compared against that of…
Strategies and concepts for the design of THz emitters based on the quantum cascade scheme are analyzed and modeled in terms of a fully three-dimensional Monte Carlo approach; this allows for a proper inclusion of both carrier-carrier and…
A strong magnetic field applied along the growth direction of a semiconductor quantum well gives rise to a spectrum of discrete energy states, the Landau levels. By combining quantum engineering of a quantum cascade structure with a static…
We have theoretically investigated the tunneling current induced by a terahertz (THz) field applied to an asymmetric double quantum well. The excitation couples an initially localized state to a nearby continuum of extended states. We have…
Tunnel-injection lasers promise various advantages in comparison to conventional laser designs. In this paper, we present a theoretical analysis for the physics of the tunnel-injection process in quantum-dot based laser devices. We describe…
We present an extended study concerning the dynamics of dense and harmonic coherent regimes in quantum cascade lasers (QCLs) in a Fabry--Perot (FP) configuration emitting in the terahertz (THz) spectral region. Firstly, we study the device…
Tunnel-injection lasers promise advantages in modulation bandwidth and temperature stability in comparison to conventional laser designs. In this paper, we present results of a microscopic theory for laser properties of tunnel-injection…
HgCdTe-based quantum cascade lasers operating in the GaAs phonon Reststrahlen band with a target wavelength of 36 mkm are theoretically investigated using the balance equations method. The optimized active region designs, which are based on…
Terahertz quantum cascade lasers (THz QCLs) are chip-scale semiconductor lasers operating in the frequency range between 1-6 THz, useful as compact sources for spectroscopy, communications, and non-destructive imaging and testing. Here, we…
Room-temperature continuous-wave operation of InGaAs/AlGaAs quantum well lasers directly grown on on-axis silicon (001) has been demonstrated. A 420 nm thick GaAs epilayer completely free of antiphase domains was initially grown on the…
We present a two-well terahertz (THz) quantum cascade laser designed for high temperature operation based on the InGaAs/AlInAs material system. The lighter effective mass and higher energy barriers increase the gain at high temperatures (T…
We at RRCAT have recently developed high power laser diodes in the wavelength range of 740 to 1000 nm. A typical semiconductor laser structure is consisted of about 10 epilayers with different composition, thickness and doping values. For…
Resonant phonon depopulation terahertz quantum cascade lasers based on vertical and diagonal lasing transitions are systematically compared using a well established ensemble Monte Carlo approach. The analysis shows that for operating…