Related papers: Intrinsic Electron Mobility Limits in beta-Ga2O3
In this paper, we present a study of the effects of temperature on the electron mobility in InAs/GaSb type-II superlattices (SLs) in which the band structures and wave functions are calculated by solving the K.P Hamiltonian using the…
In this work, we explore the origin and type of charge carriers, and their transport mechanism in polycrystalline barium-iron-niobate (BFN, BaFe$_{0.5}$Nb$_{0.5}$O$_3$) ceramics, at lower temperatures between 20K and 300K. The observed…
The magnetic susceptibility and electrical resistivity of n-type BaTi{1-x}Nb{x}O3 have been measured over a wide temperature range. It is found that, for 0 < x < 0.2, dopant electrons form immobile spin singlet small bipolarons with binding…
A first-principles density-functional-theory method has been used to reinvestigate the mechanical and dynamical stability of the metallic phase of AlH3 between 65-110 GPa. The electronic properties and phonon dynamics as a function of…
The interactions between electrons and lattice vibrational modes play the key role in determining the carrier transport properties, thermoelectric performance and other physical quantities related to phonons in semiconductors. However, for…
$\beta-Ga_2O_3$ is a promising material candidate for next-generation high power devices even as its low thermal conductivity ($\kappa$) limits utilization due to an inability to sufficiently dissipate heat. Despite its importance, a…
This work demonstrates a first-principles-based approach to obtaining finite temperature thermal and electronic transport properties which can be employed to model and understand mesoscale structural evolution during electronic, magnetic,…
We report low-temperature electronic transport measurements performed in two multi-terminal Corbino samples formed in GaAs/Al-GaAs two-dimensional electron gases (2DEG) with both ultra-high electron mobility ($\gtrsim 20\times 10^6$…
We use first-principles electronic-structure theory to determine the intra- and inter-valley electron-alloy scattering parameters in n-type GeSn alloys. These parameters are used to determine the alloy scattering contributions to the n-type…
Interfaces between complex oxides constitute a unique playground for 2D electron systems (2DES), where superconductivity and magnetism can arise from combinations of bulk insulators. The 2DES at the LaAlO3/SrTiO3 interface is one of the…
The hopping of an electron, interacting with many ions of a lattice via the long-range (Fr\"{o}hlich) electron-phonon interaction and optical absorption are studied at zero temperature. Ions are assumed to be isotropic three-dimensional…
We present a study of transport in graphene devices on polar insulating substrates by solving the Bolzmann transport equation in the presence of graphene phonon, surface polar phonon, and Coulomb charged impurity scattering. The value of…
We present a first principles investigation of the lattice dynamics and electron-phonon coupling of the high-T_c superconductor YBa_2Cu_3O_7 within the framework of density functional perturbation theory using a mixed-basis pseudopotential…
This paper reports the first demonstration of beta-phase gallium oxide as optical waveguides on sapphire substrates grown by metal-organic chemical vapor deposition (MOCVD). The propagation losses from visible to ultraviolet spectra were…
We report on nonlinear transport measurements in a two-dimensional electron gas hosted in GaAs/AlGaAs heterostructures. Upon application of direct current, the low-temperature differential resistivity acquires a positive correction, which…
We investigate resonant acoustic phonon scattering in the magneto-resistivity of an ultra-high mobility two-dimensional electron gas system subject to DC current in the temperature range 10 mK to 3.9 K. For a DC current density of $\sim$1.1…
Structural phase transitions and soft phonon modes pose a longstanding challenge to computing electron-phonon (e-ph) interactions in strongly anharmonic crystals. Here we develop a first-principles approach to compute e-ph scattering and…
One of the salient features of graphene is the very high carrier mobility that implies tremendous potential for use in electronic devices. Unfortunately, transport measurements find the expected high mobility only in freely suspended…
$\beta$-Gallium Oxide (Ga$_{2}$O$_{3}$) is an extensively investigated ultrawide-bandgap semiconductor for potential applications in power electronics and RF switching. The room temperature bulk electron mobility ($\sim$200…
Transport properties of the charge ordering compound $\beta-$Na$_{0.33}$V$_2$O$_5$ are studied in the temperature range from 30 K to 300 K using current driven DC conductivity experiments. It is found that below the metal-insulator…